V
RRM
= 100 V - 600 V
I
F
= 6 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol S6B (R) S6D (R) Unit
Re
etitive
eak reverse volta
eV
RRM
100 200 V
• Types from 100 V to 600 V V
RRM
2. Reverse polarity (R): Stud is anode.
S6B thru S6JR
S6J (R)
400
S6G (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
Diode
Conditions
600
RMS reverse voltage V
RMS
70 140 V
DC blocking voltage V
DC
100 200 V
Continuous forward current I
F
66 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol S6B (R) S6D (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
12 12 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
2.50 2.50 °C/W
12
A167
Reverse current I
R
V
F
167
S6J (R)
10 10
V
R
= 100 V, T
j
= 25 °C
I
F
= 6 A, T
j
= 25 °C
T
C
≤ 160 °C
Conditions
280
167 167
-55 to 150
66
-55 to 150
2.50
1.1 1.1
12
I
F,SM
S6G (R)
2.50
V
R
= 100 V, T
j
= 175 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
420
600400
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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