Preliminary Datasheet BCR16PM-12LB Triac R07DS0111EJ0300 (Previous: REJ03G0464-0200) Medium Power Use Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features Insulated Type Planar Passivation Type UL Recognized : Yellow Card No. E223904 IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note5 Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Page 1 of 7 BCR16PM-12LB Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2t 106.5 A2s PGM PG (AV) VGM IGM Tj Tstg -- Viso 5.0 0.5 10 2 - 40 to +150 - 40 to +150 2.0 2000 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 96C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. -- -- Typ. -- -- Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note5 30Note5 30Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD Rth (j-c) 0.2/0.1 -- -- -- -- 3.0 V C/W Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10/1 -- -- V/s Tj = 125C/150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 8.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR16PM-12LB Preliminary Performance Curves 103 7 5 3 2 Tj = 150C 101 7 5 3 2 Tj = 25C 1.0 1.5 2.5 3.0 3.5 160 140 120 100 80 60 40 20 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 VGT = 1.5V 2 PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 10-1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 180 On-State Voltage (V) 3 2 VGM = 10V Gate Voltage (V) 2.0 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) 0.5 Surge On-State Current (A) 200 102 7 5 3 2 100 Rated Surge On-State Current 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR16PM-12LB Preliminary 103 7 5 3 2 Maximum On-State Power Dissipation 40 No Fins On-State Power Dissipation (W) Transient Thermal Impedance (C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 20 15 10 5 0 2 4 6 8 10 12 14 16 18 20 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 120 100 80 60 40 360 Conduction Resistive, inductive loads 0 2 4 6 Ambient Temperature (C) 160 Curves apply regardless of conduction angle 8 10 12 14 16 18 20 140 120 100 80 All fins are black painted aluminum and greased 120 120 t2.3 100 100 t2.3 60 60 t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) 25 RMS On-State Current (A) 20 Ambient Temperature (C) 360 Conduction Resistive, inductive loads Conduction Time (Cycles at 60Hz) 140 0 30 0 160 0 35 5 3 Typical Example 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140160 Junction Temperature (C) Page 4 of 7 BCR16PM-12LB Preliminary 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution T2+, G- Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 100 -40 0 40 80 120 160 Junction Temperature (C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 125C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) Commutation Characteristics (Tj=125C) 160 Typical Example Tj = 150C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 102 7 5 3 2 Time Main Voltage Typical Example (dv/dt)c VD Tj = 125C Main Current (di/dt)c IT = 4A IT = 500s Time VD = 200V f = 3Hz 101 7 Minimum 5 Characteristics Value I Quadrant 3 2 100 7 III Quadrant 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR16PM-12LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width 102 7 Typical Example Main Voltage (dv/dt)c 5 Tj = 150C Main Current IT = 4A IT 3 = 500s 2 VD = 200V f = 3Hz 101 7 I Quadrant 5 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Commutation Characteristics (Tj=150C) Time VD (di/dt)c Time III Quadrant 3 2 100 7 Minimum Characteristics Value 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits 6 103 7 5 4 3 2 6 Recommended Circuit Values Around The Triac Load C1 A 6V V R1 A 6V 330 V 330 Test Procedure II Test Procedure I C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100 6 A 6V V 330 Test Procedure III R07DS0111EJ0300 Rev.3.00 Sep 13, 2010 Page 6 of 7 BCR16PM-12LB Preliminary Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 3.20.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR16PM-12LB BCR16PM-12LB-A8 Note : Please confirm the specification about the shipping in detail. 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