BGB420
Active Biased Transistor
MMIC
Never stop thinking.
Wireless
Silicon Discretes
BGB420, Aug. 2001
Edition 2001-08-10
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
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BGB420
Data sheet
Revision History: 2001-08-10
Previous Version: 2000-11-28
Page Subjects (major changes since last revision)
7 S-Parameter table added
8 Figure “Output Compression Point” added
9 SPICE Model added
Data sheet 4 2001-08-10
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Package Marking Chip
BGB420 SOT343 MBs T0514
BGB420 Active Biased Transistor BGB420
Bias
Bias,4 C,3
B,1 E,2
Features
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones,
cordless telephones, SAT-TV and high frequency
oscillators
•G
ma=17.5dB at 1.8GHz
• Small SOT343 package
• Current easy adjustable by an external resistor
• Open collector output
• Typical supply voltage: 1.4-3.3V
•SIEGET
®-25 technology
Description
SIEGET®-25 NPN Transistor with integrated
biasing for high gain low noise figure
applications. IC can be controlled using IBias
according to IC=10*IBias .
BGB420
Data sheet 5 2001-08-10
Maximum Ratings
Notes:
For detailed symbol description refer to figure 1.
1) TS is measured on the emitter lead at the soldering point to the PCB
Parameter Symbol Value Unit
Maximum collector-emitter voltage VCE 3.5 V
Maximum collector current IC30 mA
Maximum bias current IBias 3mA
Maximum emitter-base voltage VEB 1.5 V
Maximum base current IB0.7 mA
Total power dissipation, TS < 107°C1) Ptot 120 mW
Junction temperature Tj150 °C
Operating temperature range TOP -40 ..+85 °C
Storage temperature range TSTG -65 ... +150 °C
Thermal resistance: junction-soldering point Rth JS <270 K/W
Bias
Bias,4 C,3
B,1 E,2
V
EB
I
Bias
I
C
V
CE
I
B
Fig. 1: Symbol definition
BGB420
Data sheet 6 2001-08-10
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2,
min./max. values verified by random sampling)
Parameter Symbol min. typ. max. Unit
Maximum available power gain
VD=2V, Ic=20mA, f=1.8GHz
GMA 16.0 17.5 dB
Insertion power gain f=0.9GHz
VD=2V, Ic=20mA f=1.8GHz
|S21|222
16
dB
Insertion loss f=0.9GHz
VD=2V, Ic=0mA f=1.8GHz
IL 21
15
dB
Noise figure (ZS=50Ω) f=0.9GHz
VD=2V, Ic=5mA f=1.8GHz
F50Ω1.3
1.5
1.8
2.0
dB
Output power at 1dB gain compression
VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT
ZL=50Ω
P-1dB
7
12
10
dBm
Output third order intercept point
VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT
ZL/S=50Ω
OIP3
17
22
20
dBm
Collector-base capacitance
VCB=2V, f=1MHz
CCB 0.16 pF
Current Ratio IC/IBias
IBias=0.5mA, VD=3V
CR 7 10 13
Bias
Bias,4 C,3
B,1 E,2
I
Bias
I
C
Bias-T RF Out
Bias-T
N.C.
RF In
R
Bias
V
D
I
D
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
BGB420
Data sheet 7 2001-08-10
S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions)
Device Current I D = f(VD, RBias)
0 0.5 1 1.5 2 2.5 3 3.5
0
5
10
15
20
25
30
V
D
[V]
I
D
[mA]
270Ω
820Ω
1.5kΩ
2.7kΩ
4.7kΩ
8.2kΩ
Frequency S11 S11 S21 S21 S12 S12 S22 S22
[GHz] Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.4412 -24.8 35.7070 160.6 0.0078 83.5 0.9225 -14.1
0.2 0.4064 -47.4 31.7670 143.9 0.0157 77.5 0.8321 -26.2
0.4 0.3261 -81.6 23.1980 120.9 0.0261 70.9 0.6380 -41.4
0.6 0.2854 -105.8 17.2590 106.9 0.0351 69.4 0.5012 -49.6
0.8 0.2615 -124.2 13.5050 97.5 0.0444 68.9 0.4100 -54.2
1.0 0.2525 -136.4 10.9810 90.6 0.0537 68.2 0.3435 -57.4
1.2 0.2505 -148.9 9.1940 84.8 0.0628 67.3 0.2946 -60.2
1.4 0.2476 -158.2 7.8930 80.1 0.0720 65.9 0.2571 -62.6
1.6 0.2533 -167.1 6.9070 75.6 0.0819 64.6 0.2228 -64.2
1.8 0.2579 -173.3 6.1460 71.7 0.0915 62.9 0.1966 -66.0
2.0 0.2584 -178.7 5.5300 68.2 0.1009 61.4 0.1751 -66.3
3.0 0.2874 157.6 3.6990 51.6 0.1495 51.7 0.0802 -70.1
4.0 0.3505 139.0 2.7770 36.1 0.1970 40.4 0.0366 -178.8
5.0 0.4061 125.9 2.1930 21.5 0.2392 29.4 0.0913 126.7
6.0 0.4450 117.1 1.8050 8.6 0.2864 18.9 0.1340 99.8
BGB420
Data sheet 8 2001-08-10
Power Gain |S21|
2
, Gma, Gms=f(f)
VD = 3V, I
C=20mA
0 1 2 3 4 5 6
0
5
10
15
20
25
30
Frequency [GHz]
|S
21
|
2
, Gma, Gms [dB]
Gma/Gms
|S
21
|
2
Power Gain Gma, Gms=f(IC)
VD = 3V
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
I
C
[mA]
Gma, Gms [dB]
0.3GHz
0.9GHz
1.9GHz
2.5GHz
Matching |S11|,|S22|=f(f)
VD = 3V, I
C=20mA
0 1 2 3 4 5 6
−35
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S
11
|, |S
22
| [dB]
S
11
S
22
Output Compression Point
P−1dB = f(IC)
VD = 3V, f = 1.8GHz, Z
L = 50Ω
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
I
C
[mA]
P
−1dB
[dBm]
BGB420
Data sheet 9 2001-08-10
SPICE Model
BGB420-Chip
Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax)
.MODEL T502 NPN(
+ IS = 2.0045e-16 BF = 72.534 NF = 1.2432 VAF = 28.383
+ IKF = 0.48731 ISE = 1.9049e-14 NE = 2.0518 BR = 7.8287
+ NR = 1.3325 VAR = 19.705 IKR = 0.69141 ISC = 1.9237e-17
+ NC = 1.1724 RB = 8.5757 IRB = 0.00072983 RBM = 3.4849
+ RE = 0.31111 RC = 0.10105 CJE = 1.8063e-15 VJE = 0.8051
+ MJE = 0.46576 TF = 6.7661e-12 XTF = 0.42199 VTF = 0.23794
+ ITF = 0.001 PTF = 0 CJC = 2.3453e-13 VJC = 0.81969
+ MJC = 0.30232 XCJC = 0.3 TR = 2.3249e-09 CJS= 0
+ VJS = 0.75 MJS = 0 XTB = 0 EG = 1.11
+ XTI = 3 FC = 0.73234)
Package Equivalent Circuit
1
R2 R1
Q2 Q1
2
34
Q1 T502
Q2 T502 (area factor: 0.1)
R1 2.7kΩ
R2 27kΩ
BGB420
Chip
L
BO
C
BE
C
CE
C
1
C
3
C
2
C
CB
C
Bias
B
E
L
BI
L
CI
L
CO
L
2
L
1
L
EI
L
EO
1
2
3
4
Valid up to 3GHz
LBI 0.36 nH
LB0 0.4 nH
LEI 0.3 nH
LEO 0.15 nH
LCI 0.36 nH
LCO 0.4 nH
L10.6 nH
L20.4 nH
CBE 95 fF
CCB 6fF
CCE 132 fF
C128 fF
C288 fF
C38fF
BGB420
Data sheet 10 2001-08-10
3
I
Bias
I
C
RF Out
RF In
Voltage
Supply
C
L
C
BGB420
V
Bias
4
21
R
Bias
DC Bypass
GPS05605
1.25 ±0.1
0.1 max
2.1±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
1.3
2
±0.2
B
±0.1
0.9
12
34
A
+0.1
0.6
acc. to
+0.2
DIN 6784
A
M
0.20
0.20
M
B
Fig. 3: Typical application circuit.
This proposal demonstrates
how to use the BGB420 as a
Self-Biased Transistor. As for a
discrete Transistor matching
circuits have to be applied. A
good starting point for various
applications are the Application
Notes provided for the BFP420.
Typical Application
Package Outline
IC=10*IBias