2011-10-041
BSP60-BSP62
1
2
3
4
PNP Silicon Darlington Transistor
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BSP50...BSP52 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BSP60
BSP61
BSP62
BSP60
BSP61
BSP62
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BSP60
BSP61
BSP62
VCEO
45
60
80
V
Collector-base voltage
BSP60
BSP61
BSP62
VCBO
60
80
90
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp ≤ 10 ms ICM 2
Base current IB100 mA
Total power dissipation-
TS ≤ 124 °C
Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
2011-10-042
BSP60-BSP62
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BSP60
IC = 10 mA, IB = 0 , BSP61
IC = 10 mA, IB = 0 , BCP62
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BSP60
IC = 100 µA, IE = 0 , BSP61
IC = 100 µA, IE = 0 , BSP62
V(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 5 - -
Collector-emitter cutoff current
VCE = VCE0max , VBE = 0
ICES - - 10 µA
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO - - 10 µA
DC current gain2)
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
1000
2000
-
-
-
-
-
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 0.55 mA
IC = 1 A, IB = 1 mA
VCEsat
-
-
-
-
1.3
1.8
V
Base emitter saturation voltage2)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VBEsat
-
-
-
-
1.9
2.2
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 200 - MHz
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2011-10-043
BSP60-BSP62
Switching time test circuit
Switching time waveform
10%
0 V
90%
10%
-VCC td
r
t
ton
10%
off
t
tsf
t
EHN00068
Vin
out
V90%
90%
2011-10-044
BSP60-BSP62
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00667BSP 60...62
10
10 mA
5
FE
5
10
2
5
10
3
5
10
4
1
10
2
10
3
10
4
Ι
C
h
Collector-emitter saturation voltage
IC = ƒ(VCEsat), IB = Parameter
EHP00669BSP 60...62
01V2
4 mA
10
1
5
mA
10
2
Ι
C
5
10
3
V
CE sat
= 0.5 mA
B
Ι
Base-emitter saturation voltage
IC = ƒ(VBEsat), IB = Parameter
EHP00670BSP 60...62
10
01V
BE sat
3
5
2
10
3
2
10
1
5
V
mA
= 0.5 mA
4 mA
Ι
C
Ι
B
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
EHP00668BSP 60...62
10
10 mA
f
C
10
MHz
10
T
5
Ι
12 3
10
3
2
101
5
5
2011-10-045
BSP60-BSP62
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
2
4
6
8
10
12
14
16
18
pF
22
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00273BSP 60...62
-6
0
10
5
D
=
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
PDC
P
p
t
External resistance RBE = ƒ (TA)**
VCB = VCEmax
** RBEmax for thermal stability
EHP00666BSP 60...62
10
050 ˚C
R
A
150
5
100
BE
10
7
6
105
5
T
Ω
2011-10-046
BSP60-BSP62
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-047
BSP60-BSP62
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
