C2M1000170J VDS 1700 V ID @ 25C Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 5.3 A 1.0 N-Channel Enhancement Mode Features Package * * * * * * * * * High blocking voltage with low RDS(on) Easy to parallel and simple to drive Low parasitic inductance Low impedance package Separate driver source pin Ultra-low drain-gate capacitance Halogen-Free, RoHS compliant Fast intrinsic diode with low reverse recovery (Qrr) Wide creepage (~7mm) between drain and source TAB Drain Drain (TAB) Benefits * * * * * 1 2 3 4 5 G KS S S S Higher system efficiency Smooth switching waveforms Reduced cooling requirements Minimum gate ringing Increased system reliability 6 S 7 S Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Applications * * * Auxiliary power supplies Switch Mode Power Supplies High-voltage capacitive loads Part Number Package C2M1000170J TO-263-7 Maximum Ratings (TC = 25 C unless otherwise specified) Symbol Value Unit Test Conditions VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 A VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) PD TJ , Tstg TL 1 Parameter 5.3 3.6 A VGS = 20 V, TC = 25C Note Fig. 19 VGS = 20 V, TC = 100C Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 78 W TC=25C, TJ = 150 C Fig. 20 -55 to +150 C 260 C Operating Junction and Storage Temperature Solder Temperature C2M1000170J Rev. B, 12-2017 1.6mm (0.063") from case for 10s Electrical Characteristics (TC = 25C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. 2.0 2.6 1.0 Drain-Source On-State Resistance VDS = VGS, ID = 0.5 mA V VDS = VGS, ID = 0.5 mA, TJ = 150 C 100 A VDS = 1.7 kV, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1.4 200 Coss Output Capacitance 12 Crss Reverse Transfer Capacitance 1.3 Eoss Coss Stored Energy 7 EON Turn-On Switching Energy 31 Turn Off Switching Energy 10 td(on) Turn-On Delay Time 4 Rise Time 4.8 Turn-Off Delay Time 10.8 Fall Time 40.4 Internal Gate Resistance 24.8 Qgs Gate to Source Charge 4.7 Qgd Gate to Drain Charge 5.4 Qg Total Gate Charge 13 VGS = 20 V, ID = 2 A, TJ = 150 C VDS= 20 V, IDS= 2 A S 0.81 EOFF VGS = 20 V, ID = 2 A 0.82 Input Capacitance RG(int) V 2.0 Ciss tf VGS = 0 V, ID = 100 A 4 1 Test Conditions V 2.1 Transconductance td(off) Unit 1700 gfs tr Max. VDS= 20 V, IDS= 2 A, TJ = 150 C Note Fig. 11 Fig. 4,5,6 Fig. 7 VGS = 0 V pF VDS = 1000 V Fig. 17,18 f = 1 MHz J VAC = 25 mV Fig 16 J VDS = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 , L= 1368 H, TJ = 150 C Fig. 26 VDD = 1.2 kV, VGS = -5/20 V ID = 2 A, RG(ext) = 2.5 , RL = 600 Timing relative to VDS Per IEC60747-8-4 pg 83 ns f = 1 MHz, VAC = 25 mV nC VDS = 1.2 kV, VGS = -5/20 V ID = 2 A Per IEC60747-8-4 pg 21 Fig. 27 Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Typ. Max. Unit Test Conditions 3.8 V VGS = - 5 V, ISD = 1 A, TJ = 25 C 3.3 V VGS = - 5 V, ISD = 1 A, TJ = 150 C A TC= 25 C VGS = - 5 V, ISD = 2 A TJ = 25 C VR = 1.2 kV dif/dt = 1200 A/s IS Continuous Diode Forward Current 4 trr Reverse Recovery Time 20 ns Qrr Reverse Recovery Charge 24 nC Irrm Peak Reverse Recovery Current 6.5 A Note Fig. 8, 9, 10 Note 1 Note 1 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter RJC Thermal Resistance from Junction to Case RJC Thermal Resistance from Junction to Ambient C2M1000170J Rev. B, 12-2017 Typ. Max. 1.5 1.6 40 Unit C/W Test Conditions Note Fig. 21 Typical Performance Conditions: TJ = -55 C tp < 200 s Drain-Source Current, IDS (A) 5 6 VGS = 20 V VGS = 18 V VGS = 16 V 4 VGS = 14 V 3 2 VGS = 12 V 1 0 4 8 12 16 VGS = 20 V VGS = 18 V VGS = 16 V 4 VGS = 14 V 3 VGS = 12 V 2 VGS = 10 V 1 VGS = 10 V 0 Conditions: TJ = 25 C tp < 200 s 5 Drain-Source Current, IDS (A) 6 0 20 0 4 8 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 C 5 Drain-Source Current, IDS (A) 2.5 Conditions: TJ = 150 C tp < 200 s VGS = 18 V VGS = 16 V 2.0 VGS = 14 V VGS = 12 V VGS = 10 V 3 2 1 1.5 1.0 0.5 0.0 0 4 8 12 16 20 -50 -25 0 Drain-Source Voltage, VDS (V) 2.5 TJ = 150 C 2.0 1.5 TJ = 25 C 1.0 TJ = -55 C 0.5 0.0 0 1 2 3 4 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 C2M1000170J Rev. B, 12-2017 5 50 75 100 125 150 Conditions: IDS = 2 A tp < 200 s 3.0 On Resistance, RDS On (Ohms) On Resistance, RDS On (Ohms) 3.5 Conditions: VGS = 20 V tp < 200 s 3.0 25 Junction Temperature, TJ (C) Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 C 3.5 20 Conditions: IDS = 2 A VGS = 20 V tp < 200 s VGS = 20 V 4 0 16 Figure 2. Output Characteristics TJ = 25 C On Resistance, RDS On (P.U.) 6 12 Drain-Source Voltage, VDS (V) 6 2.5 2.0 VGS = 14 V 1.5 VGS = 16 V VGS = 18 V 1.0 VGS = 20 V 0.5 0.0 -50 -25 0 25 50 75 Junction Temperature, TJ (C) 100 Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 125 150 Typical Performance 4 -4 VGS = -5 V 2 TJ = -55 C 1 2 4 6 8 10 12 14 -3 -4 16 -3 -2 Drain-Source Current, IDS (A) Figure 8. Body Diode Characteristic at -55 C -1 0 Condition: TJ = 25 C tp < 200 s VGS = 0 V VGS = -2 V 0 -6 -5 -2 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 1.0 0.5 75 Junction Temperature TJ (C) 100 125 Figure 11. Threshold Voltage vs. Temperature 4 C2M1000170J Rev. B, 12-2017 -1 -3 -4 -5 Conditions: IDS = 2 A IGS = 100 mA VDS = 1200 V TJ = 25 C 20 1.5 50 VGS = 0 V 0 25 2.0 25 Condition: TJ = 150 C tp < 200 s Figure 10. Body Diode Characteristic at 150 C 2.5 0 0 Drain-Source Voltage, VDS (A) Conditions Conditions VV DSDS==V10 GS V IDS==0.5 IDS 0.5mA mA 3.0 -1 -2 Figure 9. Body Diode Characteristic at 25 C 3.5 -2 VGS = -2 V -5 Drain-Source Voltage, VDS (A) -3 -1 -4 -25 -4 VGS = -5 V -3 -50 -5 Drain-Source Voltage, VDS (A) VGS = -5 V 0.0 VGS = 0 V Drain-Source Current, IDS (A) -4 0 Condition: TJ = -55 C tp < 200 s -2 Figure 7. Transfer Characteristic for Various Junction Temperatures -5 0 VGS = -2 V Gate-Source Voltage, VGS (V) -6 -1 -1 TJ = 25 C 0 -2 -3 TJ = 150 C 3 0 -5 -6 Conditions: VDS = 20 V tp < 200 s Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 5 150 15 10 5 0 -5 0 2 4 6 8 10 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 12 14 Typical Performance -4 Conditions: TJ = -55 C tp < 200 s -3 -2 -1 0 -5 0 Drain-Source Current, IDS (A) -1 -2 VGS = 10 V -3 VGS = 15 V VGS = 20 V -4 -4 -3 Conditions: TJ = 150 C tp < 200 s VGS = 0 V -2 -1 VGS = 5 V 0 -1 -2 -3 VGS = 20 V -4 -5 Drain-Source Voltage, VDS (V) Figure 14. 3rd Quadrant Characteristic at 25 C 0 8 0 7 VGS = 5 V 6 VGS = 10 V -2 VGS = 15 V VGS = 20 V -3 Stored Energy, EOSS (J) -1 Drain-Source Current, IDS (A) 0 VGS = 15 V -4 5 4 3 2 1 0 -5 Drain-Source Voltage, VDS (V) 0 200 Figure 15. 3rd Quadrant Characteristic at 150 C 1000 400 600 800 Drain to Source Voltage, VDS (V) 1000 1200 Figure 16. Output Capacitor Stored Energy 1000 Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss Conditions: TJ = 25 C VAC = 25 mV f = 1 MHz Ciss 100 Capacitance (pF) Capacitance (pF) -1 VGS = 10 V Figure 13. 3rd Quadrant Characteristic at -55 C -5 -2 VGS = 0 V -5 Drain-Source Voltage, VDS (V) -3 Conditions: TJ = 25 C tp < 200 s VGS = 0 V VGS = 5 V -4 Drain-Source Current, IDS (A) -5 Coss 10 100 Coss 10 Crss Crss 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 5 C2M1000170J Rev. B, 12-2017 200 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) 1000 Typical Performance 90 Conditions: TJ 150 C 5 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 6 4 3 2 1 0 -55 -30 -5 20 45 70 Case Temperature, TC (C) 95 120 70 60 50 40 30 20 10 0 145 Conditions: TJ 150 C 80 Figure 19. Continuous Drain Current Derating vs. Case Temperature -55 -30 -5 20 45 70 Case Temperature, TC (C) 95 120 145 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 100E-3 0.1 0.05 0.02 10E-3 1E-3 SinglePulse 0.01 100 s 100 ms 0.10 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 ms 1.00 1 Conditions: TC = 25 C D = 0, Parameter: tp 0.1 1 Figure 21. Transient Thermal Impedance (Junction - Case) 80 70 Switching Loss (uJ) 50 Conditions: TJ = 25 C VDD = 1200 V RG(ext) = 2.5 VGS = -5V/+20 V FWD = C2M1000170J L = 1368 H 60 40 35 ETotal 50 EOn 30 20 100 1000 ETotal 30 25 EOn 20 15 EOff 10 EOff 10 0 Conditions: TJ = 25 C VDD = 900 V RG(ext) = 2.5 VGS = -5V/+20 V FWD = C2M1000170J L = 1368 H 45 40 10 Drain-Source Voltage, VDS (V) Figure 22. Safe Operating Area Switching Loss (uJ) 90 5 0 1 2 3 4 Drain to Source Current, IDS (A) 5 Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 1200 V) 6 10 s Limited by RDS On 0.3 Drain-Source Current, IDS (A) Junction To Case Impedance, ZthJC (oC/W) 10.00 0.5 1 C2M1000170J Rev. B, 12-2017 6 0 0 1 2 3 4 Drain to Source Current, IDS (A) 5 Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 900 V) 6 Typical Performance 90 80 70 Switching Loss (uJ) 70 Conditions: TJ = 25 C VDD = 1200 V IDS = 2 A VGS = -5V/+20 V FWD = C2M1000170J L = 1368 H ETotal 50 60 EOn 50 40 30 20 0 5 10 15 20 25 30 ETotal 40 30 EOn 20 EOff 10 EOff 10 0 Conditions: IDS = 2 A VDD = 1200 V RG(ext) = 2.5 VGS = -5V/+20 V FWD = C2M1000170J L = 1368 H 60 Switching Loss (uJ) 100 35 External Gate Resistor RG(ext) (Ohms) 40 45 0 -50 -25 0 25 50 75 Junction Temperature, TJ (C) 100 Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 45 Conditions: TJ = 25 C VDD = 1200 V RL = 600 VGS = -5V/+20 V 40 35 tf Time (ns) 30 25 td (off) 20 15 tr 10 td (on) 5 0 0 10 20 30 External Gate Resistor, RG(ext) (Ohms) Figure 27. Switching Times vs. RG(ext) 7 C2M1000170J Rev. B, 12-2017 40 125 50 Figure 28. Switching Times Definition 150 Test Circuit Schematic Figure 29. Clamped Inductive Switching Waveform Test Circuit ESD Ratings 8 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 4000V 3A (>4000V) ESD-MM All Devices Passed 200V A (>200V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M1000170J Rev. B, 12-2017 Package Dimensions TO-263-7 Package 7L D2PAK Dim All Dimensions in Millimeters Min typ Max 4.300 4.435 4.570 A1 0.00 0.125 0.25 b 0.500 0.600 0.700 A b2 0.600 0.800 1.000 c 0.330 0.490 0.650 C2 1.170 1.285 1.400 D 9.025 9.075 9.125 D1 4.700 4.800 4.900 E 10.130 10.180 10.230 E1 6.500 7.550 8.600 E2 6.778 7.223 7.665 e H 9 C2M1000170J Rev. B 12-2017 1.27 15.043 16.178 17.313 L 2.324 2.512 2.700 L1 0.968 1.418 1.868 O 0 4 8 O1 4.5 5 5.5 Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links * * * * C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support 60W Auxiliary power supply reference design: http://wolfspeed.com/power/tools-and-support Copyright (c) 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C2M1000170J Rev. B, 12-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power