MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE CM200TU-12F IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 0.25 23 12 4-5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 11 Tc measured point 8.1 7.1 +1 29 -0.5 0.8 4 LABEL 0.5 G 48.5 11 14.4 21.7 E 3.75 G U 5-M5NUTS Tc measured point 2.8 11 21.7 E 26 80 0.25 102 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 P GUP GVP RTC E UP U G UN RTC E UN GWP RTC EVP V GVN RTC EVN RTC EWP W GWN RTC EWN N CIRCUIT DIAGRAM Sep.2000 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Torque strength -- Weight Conditions G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings 600 20 200 400 200 400 590 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Unit V V A A W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Parameter Symbol Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c')Q RG Contact thermal resistance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 -- 1.6 1.6 -- -- -- 1240 -- -- -- -- -- 3.8 -- -- -- 0.09 -- -- 20 2.2 -- 54 3.6 2.0 -- 120 100 350 250 150 -- 2.6 0.21 0.35 -- 0.15*3 A VCE(sat) VGE = VCES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 300V, I C = 200A, VGE = 15V VCC = 300V, IC = 200A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips 31 mA V nF nC ns ns C V C/W Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep.2000 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 350 VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 Tj=25C 9.5 300 9 250 200 8.5 150 100 8 50 7.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 0 0.5 1 1.5 2 2.5 3 3.5 VGE = 15V 2.5 2 1.5 1 Tj = 25C Tj = 125C 0.5 0 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 5 Tj = 25C 7 5 4 3 IC = 400A 2 IC = 200A 1 0 IC = 80A 6 8 10 12 14 16 18 102 7 5 3 2 101 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 101 7 5 3 2 Coes 100 7 5 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) Cies 3 2 3 2 Tj = 25C 3 2 100 20 102 CAPACITANCE Cies, Coes, Cres (nF) 3 4 EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 400 7 5 3 2 102 7 5 td(off) tf td(on) 3 2 101 7 5 3 2 tr Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Sep.2000 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE 102 7 5 trr Irr 3 2 101 7 5 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 25C 3 2 100 1 10 2 5 7 102 3 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.21C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.35C/W 100 7 5 3 2 3 2 10-1 10-1 10-2 10-2 7 5 3 2 7 5 3 2 10-3 7 5 3 2 7 5 3 2 Single Pulse TC = 25C 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 18 IC = 200A VCC = 200V 16 14 VCC = 300V 12 10 8 6 4 2 0 0 200 600 1000 1400 1800 GATE CHARGE QG (nC) Sep.2000