PD - 97521 IRF9388PbF HEXFET(R) Power MOSFET VDS -30 25 V V 11.9 m -12 A VGS max RDS(on) max (@VGS = -10V) ID (@TA = 25C) 6 ' 6 ' 6 ' * ' SO-8 Applications * Adaptor Input Switch for Notebook PC Features and Benefits Features Resulting Benefits 25V VGS max Direct Drive at High V G S Industry-Standard SO8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type IRF9388PbF IRF9388TRPbF SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS 25 ID @ TA = 25C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70C Continuous Drain Current, VGS @ 10V -9.6 IDM Pulsed Drain Current -96 PD @TA = 25C PD @TA = 70C f Power Dissipation f Power Dissipation c Units V -12 2.5 1.6 Linear Derating Factor 0.02 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range A W W/C C Notes through are on page 2 www.irf.com 1 6/4/10 IRF9388PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient VGS(th) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge -30 --- --- --- -1.3 --- --- --- --- --- 20 --- --- 0.021 8.5 10 -1.8 -5.8 --- --- --- --- --- 18 Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- --- --- --- 35 5.3 8.5 15 19 57 80 66 1680 350 220 Static Drain-to-Source On-Resistance h h h h h Conditions Min. Typ. Max. Units --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA VGS = -20V, ID = -12A --- m VGS = -10V, ID = -12A 11.9 -2.4 V VDS = VGS, ID = -25A --- mV/C VDS = -24V, VGS = 0V -1.0 A VDS = -24V, VGS = 0V, TJ = 125C -150 VGS = -25V 10 A VGS = 25V 10 --- S VDS = -10V, ID = -9.6A --- nC VDS = -15V, VGS = -4.5V, ID = - 9.6A VGS = -10V 52 nC VDS = -15V --- ID = -9.6A --- e e --- --- --- --- --- --- --- --- ns pF VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 e See Figs. 20a &20b VGS = 0V VDS = -25V = 1.0MHz Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Diode Characteristics c d Parameter IS ISM Typ. Max. Units --- --- 120 -9.6 mJ A Conditions Min. Typ. Max. Units Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c --- --- -2.5 --- --- -96 A MOSFET symbol showing the integral reverse p-n junction diode. D G S e VSD Diode Forward Voltage --- --- -1.2 V TJ = 25C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time --- 51 76 ns TJ = 25C, IF = -2.5A, VDD = -24V Qrr Reverse Recovery Charge --- 35 53 nC di/dt = 100A/s Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead Junction-to-Ambient f g e Typ. Max. Units --- --- 20 50 C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 2.6mH, RG = 25, IAS = -9.6A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRF9388PbF 100 10 TOP 1 BOTTOM -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V 0.1 -2.5V 60s PULSE WIDTH Tj = 25C 0.01 10 1 60s PULSE WIDTH Tj = 150C 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 -ID, Drain-to-Source Current (A) BOTTOM -2.5V 0.1 0.1 10 TJ = 150C 1 TJ = 25C 0.1 V DS = -10V 60s PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 6.0 1.2 1.0 0.8 0.6 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature 14 -V GS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd C oss = C ds + Cgd Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics 10000 ID = -12A V GS = -10V 1.4 -V GS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V -2.5V TOP Coss Crss ID= -9.6A 12 V DS= -24V V DS= -15V 10 V DS= -6.0V 8 6 4 2 0 100 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 8 16 24 32 40 48 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRF9388PbF 1000 -ID, Drain-to-Source Current (A) -ISD, Reverse Drain Current (A) 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 150C 10 1 TJ = 25C 1msec 10 10msec 1 TA = 25C Tj = 150C Single Pulse V GS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 0.1 1 -V SD, Source-to-Drain Voltage (V) 10 100 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 12 -V GS(th) , Gate threshold Voltage (V) 2.5 10 -ID, Drain Current (A) DC 0.1 8 6 4 2 0 2.0 ID = -25A 1.5 1.0 25 50 75 100 125 150 -75 -50 -25 TA , Ambient Temperature (C) 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com 50 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) IRF9388PbF ID = -12A 40 30 20 TJ = 125C 10 TJ = 25C 0 0 5 10 15 50 40 30 V GS = -4.5V 20 10 V GS = -10V 0 0 20 10 20 30 50 60 Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 500 1000 ID TOP -2.3A -3.3A BOTTOM -9.6A 800 Single Pulse Power (W) 400 300 200 600 400 100 200 0 0 25 50 75 100 125 1E-5 150 1E-4 Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * 1E-2 Driver Gate Drive + - D.U.T. ISD Waveform Reverse Recovery Current + di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop Inductor Current Inductor Curent Ripple 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * * * * * 1E+0 VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. - 1E-1 Fig 16. Typical Power vs. Time + RG 1E-3 Time (sec) Starting TJ , Junction Temperature (C) * 40 -ID, Drain Current (A) -V GS, Gate -to -Source Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) 60 ISD * VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs 5 IRF9388PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 18a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 18b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01 tp V(BR)DSS 15V Fig 19b. Unclamped Inductive Waveforms Fig 19a. Unclamped Inductive Test Circuit VDS RD td(on) VGS RG t d(off) tf VGS D.U.T. - + 10% V DD -VGS Pulse Width 1 s Duty Factor 0.1 % Fig 20a. Switching Time Test Circuit 6 tr 90% VDS Fig 20b. Switching Time Waveforms www.irf.com IRF9388PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ .[ & \ >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& ;/ ;F & $ % )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRF9388PbF SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Consumer Qualification level Moisture Sensitivity Level RoHS Compliant (per JEDEC JESD47F guidelines) MSL1 SO-8 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/2010 8 www.irf.com