TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0042 Rev. 2 (080857) Page 1 of 3
DEVICES LEVELS
2N2221A 2N2222A
JANSM – 3K Rads (Si)
2N2221AL 2N2222AL
JANSD – 10K Rads (Si)
2N2221AUA 2N2222AUA
JANSP – 30K Rads (Si)
2N2221AUB 2N2222AUB
JANSL – 50K Rads (Si)
2N2221AUBC 2N2222AUBC
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage V
CEO
50 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current I
C
800 mAdc
Total Power Dissipation @ T
A
= +25°C
P
T
W
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
0.5
0.65
0.50
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Ambient
R
θJA
°C/W
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
325
210
325
1. Derate linearly 3.08 mW/°C above T
A
> +37.5°C
2. Derate linearly 4.76 mW/°C above T
A
> +63.5°C
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0042 Rev. 2 (080857) Page 2 of 3
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
50 Vdc
I
C
= 10mAdc
Collector-Base Cutoff Current
I
CBO
µAdc
ηAdc
V
CB
= 75Vdc
V
CB
= 60Vdc 10
10
Emitter-Base Cutoff Current
I
EBO
µAdc
ηAdc
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc 10
10
Collector-Emitter Cutoff Current
I
CES
50 ηAdc
V
CE
= 50Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
h
FE
I
C
= 0.1mAdc, V
CE
= 10Vdc 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 30
50
I
C
= 1.0mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 35
75 150
325
I
C
= 10mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 40
100
I
C
= 150mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 40
100 120
300
I
C
= 500mAdc, V
CE
= 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 20
30
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc 0.3
1.0
Base-Emitter Voltage
V
BE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc 0.6
1.2
2.0
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
T4-LDS-0042 Rev. 2 (080857) Page 3 of 3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
h
fe
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC 30
50
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
|h
fe
|
I
C
= 20mAdc, V
CE
= 20Vdc, f = 100MHz 2.5
Output Capacitance
C
obo
8.0 pF V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
C
ibo
25 pF
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
See figure 8 of MIL-PRF-19500/255 t
on
35 ηs
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
t
off
300 ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
