DSEP60-12A HiPerFRED VRRM = 1200 V I FAV = 60 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180806b DSEP60-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25C 650 A VR = 1200 V TVJ = 150C 2.5 mA IF = TVJ = 25C 2.66 V 3.18 V 1.81 V VF forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 150 C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 115 C rectangular max. Unit 1200 V V 2.40 V T VJ = 175 C 60 A TVJ = 175 C 1.08 V 9.4 m d = 0.5 for power loss calculation only 0.45 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C VR = 600 V f = 1 MHz TVJ = 25C 30 pF TVJ = 25 C 13 A TVJ = 100 C 20 A TVJ = 25 C 80 ns TVJ = 100 C 220 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25C IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved 60 A; VR = 600 V -di F /dt = 200 A/s 330 500 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20180806b DSEP60-12A Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 6 Weight MD mounting torque FC mounting force with clip g 0.8 1.2 Nm 20 120 N Product Marking IXYS Logo XXXXXXXXX Part No. Assembly Line Zyyww abcd Assembly Code Date Code Ordering Standard Ordering Number DSEP60-12A Similar Part DSEP60-12B DSEP60-12AR DHG60I1200HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP60-12A Package TO-247AD (2) ISOPLUS247 (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 477133 Voltage class 1200 1200 1200 T VJ = 175 C Fast Diode V 0 max threshold voltage 1.08 V R0 max slope resistance * 6.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20180806b DSEP60-12A Outlines TO-247 A E A2 D2 O P1 OP S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20180806b DSEP60-12A Fast Diode 100 10 TVJ = 150C TVJ = 100C TVJ = 25C 80 100 TVJ = 100C VR = 600 V TVJ = 100C VR = 600 V 8 60 80 IF = 120 A IF = 60 A IF = 30 A 6 Qr IF 40 60 IRM 4 40 [C] [A] 20 [A] 2 0 0 1 2 20 0 1 00 3 IF = 120 A IF = 60 A IF = 30 A 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF versus VF 600 800 1000 -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 280 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 120 1.2 TVJ = 100C VR = 600 V TVJ = 100C IF = 60 A 1.5 240 80 IF = 120 A IF = 60 A IF = 30 A trr Kf 1.0 VFR [ns] trr [s] [V] 200 IRM 0.8 40 0.4 0.5 Qr trr VFR 0.0 160 0 40 80 120 160 0 0 TVJ [C] 200 400 600 800 1000 0 200 -diF /dt [A/s] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.5 0.4 Constants for ZthJC calculation: ZthJC 0.3 [K/W] 0.2 0.1 i Rthi (K/W) ti (s) 1 0.0050 0.0001 2 0.0550 0.0010 3 0.1750 0.0140 4 0.2150 0.2300 0.0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180806b