For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
VCOS with Fo/2 OUTPUT - SMT
8
8 - 1
HMC632LP5 / 632LP5E
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 14.25 - 15.65 GHz
v03.0811
General Description
Features
Functional Diagram
The HMC632LP5(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC632LP5(E) integrates resonators, negative resis-
tance devices, varactor diodes and features half-
frequency and divide-by-4 outputs. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is +9 dBm typical from a +5V
supply voltage. The prescaler and RF/2 functions can
be disabled to conserve current if not required. The
voltage controlled oscillator is packaged in a leadless
QFN 5x5 mm surface mount package, and requires no
external matching components.
Dual Output: Fo = 14.25 - 15.65 GHz
Fo/2 = 7.125 - 7.825 GHz
Pout: +9 dBm
Phase Noise: -107 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
Typical Applications
The HMC632LP5(E) is ideal for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Electrical Specications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter Min. Typ. Max. Units
Frequency Range Fo
Fo/2
14.25 - 15.65
7.125 - 7.825
GHz
GHz
Power Output
RFOUT
RFOUT/2
RFOUT/4
4
7
-8
12
13
-2
dBm
dBm
dBm
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT -107 dBc/Hz
Tune Voltage Vtune 2 13 V
Supply Current Icc(Dig) + Icc(Amp) + Icc(RF) 280 350 400 mA
Tune Port Leakage Current (Vtune= 13V) 10 µA
Output Return Loss 2 dB
Harmonics/Subharmonics 1/2
2nd
25
25
dBc
dBc
Pulling (into a 2.0:1 VSWR) 10 MHz pp
Pushing @ Vtune= 5V 35 MHz/V
Frequency Drift Rate 1.0 MHz/°C