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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
RHRP30120
30 A, 1200 V, Hyperfast Diode
The RHRP30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
NOTE: When ordering, use the entire part number.
Symbol
Features
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP30120 TO-220AC RHR30120
K
A
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC =25oC
RHRP30120 UNIT
PeakRepetitiveReverseVoltage ...........................................................V
RRM 1200 V
WorkingPeakReverseVoltage............................................................V
RWM 1200 V
DCBlockingVoltage.......................................................................V
R1200 V
AverageRectifiedForwardCurrent..........................................................I
F(AV) 30 A
(TC=78
oC)
RepetitivePeakSurgeCurrent .............................................................I
FRM 60 A
(Square Wave, 20 kHz)
NonrepetitivePeakSurgeCurrent........................................................... I
FSM 300 A
(Halfwave, 1 Phase, 60 Hz)
MaximumPowerDissipation.................................................................P
D125 W
AvalancheEnergy(SeeFigures7and8).....................................................E
AVL 30 mJ
OperatingandStorageTemperature......................................................T
STG,T
J-65 to 175 oC
Hyperfast Recovery trr = 85 ns (@ IF = 30 A)
Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
1200 V Reverse Voltage and High Reliability
Avalanche Energy Rated
RoHS Compliant
www.fairchildsemi.com
1
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
Data Sheet November 2013
Electrical Specifications TC=25
oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNIT
VF- - 3.2 V
--2.6V
IR- - 250 µA
- - 1mA
trr - -65ns
- - 85 ns
ta- 48 - ns
tb
IF = 30 A
IF =30 A,TC =150
oC
VR = 1200 V
VR = 1200 V, TC =150
oC
IF =1 A, diF/dt = 100 A/µs
IF =30 A,diF/dt = 100 A/µs
IF =30 A,diF/dt = 100 A/µs
IF =30 A,diF/dt = 100 A/µs
- 22 - ns
RθJC --1.2
oC/W
DEFINITIONS
VF= Instantaneous forward voltage (pw = 300µs, D = 2%).
IR= Instantaneous reverse current.
Trr = Reverse recovery time (See Figure 6), summation of ta +tb.
ta = Time to reach peak reverse current (See Figure 6).
tb =Time from peak I
RM to projected zero crossing of IRM basedonastraightlinefrompeakI
RM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
10
IF, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
175oC
100oC
25oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
500
100
10
1.0
0.1
0.01
0
IR, REVERSE CURRENT (µA)
200 400 600 800 1000
VR, REVERSE VOLTAGE (V)
1200
0.001
175oC
100oC
25oC
RHRP30120
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2
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves (Continued)
100
75
50
25
01
t, TIME (ns)
IF, FORWARD CURRENT (A)
trr
ta
tb
10 30
40
30
20
10
025 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
SQ. WAVE
DC
Test Circuits and Waveforms
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RGCONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R<0.1
EAVL =1/2LI
2[VR(AVL)/(VR(AVL) -V
DD)]
Q1=IGBT(BV
CES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1.225A
L=40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP30120
www.fairchildsemi.com
3
©2001 Fairchild Semiconductor Corporation
RHRP30120 Rev. C1
4.80
4.30
10.67
9.65
4.09
3.50
3.43
2.54
9.40
8.38
2.54
5.08
16.51
14.22
14.73
13.60
1.02
0.38
6.35 MAX
1.65
1.25
1.91
0.36
M
B A
M
0.36
M
C
A B
A
C
1.40
0.51
6.86
5.84
2.92
2.03
0.61
0.33
B
13.40
12.19
8.89
6.86
0.60 MAX
16.15
15.75
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220A02REV5
1 2
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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