Industrial Power Control
IGBT
Data Sheet
TRENCHSTOPTM IGBT3 Chip
SIGC158T120R3E
SIGC158T120R3E
L7698M, L7698T, L7698E 2 Rev. 2.3, 19.08.2015
Table of Contents
Features and Applications ............................................................................................................................... 3
Mechanical Parameters .................................................................................................................................... 3
Maximum Ratings ............................................................................................................................................. 4
Static and Electrical Characteristics .............................................................................................................. 4
Further Electrical Characteristics ................................................................................................................... 5
Chip Drawing ..................................................................................................................................................... 6
Revision History ............................................................................................................................................... 7
Relevant Application Notes ............................................................................................................................. 7
Legal Disclaimer ............................................................................................................................................... 8
SIGC158T120R3E
L7698M, L7698T, L7698E 3 Rev. 2.3, 19.08.2015
TRENCHSTOPTM IGBT3 Chip
Features:
1200V trench & field stop technology
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Recommended for:
Power modules
Applications:
Drives
Chip Type
VCE
ICn 1
Die Size
Package
SIGC158T120R3E
1200V
150A
12.56mm x 12.56mm
Sawn on foil
Mechanical Parameters
Die size
12.56 x 12.56
mm2
Emitter pad size
See chip drawing
Gate pad size
1.320 x 0.821
Area total
157.75
Thickness
140
µm
Wafer size
200
mm
Maximum possible chips per wafer
156
Passivation frontside
Photoimide
Pad metal
3200nm AlSiCu
Backside metal
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al, ≤500µm
Reject ink dot size
0.65mm; max. 1.2mm
Storage environment
for original and
sealed MBB bags
Ambient atmosphere air, temperature 17°C – 25°C,
<6 months
for open MBB bags
Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas,
humidity <25%RH, temperature 17°C – 25°C, <6 months
1
Nominal collector current at TC=100°C for chip packaged in power modules, see application example cited on page 5.
SIGC158T120R3E
L7698M, L7698T, L7698E 4 Rev. 2.3, 19.08.2015
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tvj=25C
VCE
1200
V
DC collector current, limited by Tvj max 2
IC
-
A
Pulsed collector current, tp limited by Tvj max 3
IC,puls
450
A
Gate-emitter voltage
VGE
20
V
Junction temperature range
Tvj
-55 ... +175
°C
Operating junction temperature
Tvj
-55 ... +150
°C
Short circuit data 3 / 4 VGE=15V, VCC=900V, Tvj=125°C
tsc
10
µs
Reverse bias safe operating area 3 (RBSOA)
IC,max=300A, VCE,max=1200V, Tvj125°C
Static Characteristics (tested on wafer), Tvj=25
C
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC=6mA
1200
-
-
V
Collector-emitter saturation voltage
VCEsat
VGE=15V, IC=45A
0.98
1.19
1.37
Gate-emitter threshold voltage
VGE(th)
IC=6mA, VGE=VCE
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=1200V, VGE=0V
-
-
20
µA
Gate-emitter leakage current
IGES
VCE=0V, VGE=20V
-
-
600
nA
Integrated gate resistor
rG
5
Electrical Characteristics 3
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Collector-emitter saturation
voltage
Tvj=25C
VCEsat
VGE=15V, IC=150A
1.4
1.7
2.1
V
Tvj=125C
-
2.0
-
Input capacitance
Cies
VCE=25V,
VGE=0V, f=1MHz
Tvj=25C
-
10766
-
pF
Reverse transfer capacitance
Cres
-
488
-
2
Depending on thermal properties of assembly.
3
Not subject to production test - verified by design/characterization.
4
Allowed number of short circuits: <1000; time between short circuits: >1s.
SIGC158T120R3E
L7698M, L7698T, L7698E 5 Rev. 2.3, 19.08.2015
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
FS150R12KE3
Rev. 3.1
SIGC158T120R3E
L7698M, L7698T, L7698E 6 Rev. 2.3, 19.08.2015
Chip Drawing
E = Emitter
G = Gate
T = Test pad do not contact
G
E
T
E
E
E
E
E
E
E
SIGC158T120R3E
L7698M, L7698T, L7698E 7 Rev. 2.3, 19.08.2015
Bare Die Product Specifics
Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all
characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Revision
Subjects (major changes since last revision)
Date
2.0
Release of final datasheet, change wafer size to 200mm
30.04.2010
2.1
Additional basic types L7698M, L7698T, L7698E; new gate pad design
02.07.2014
2.2
Minor changes, chip drawing, 100% VCEsat test conditions
06.02.2015
2.3
Update disclaimer
19.08.2015
Relevant Application Notes
SIGC158T120R3E
L7698M, L7698T, L7698E 8 Rev. 2.3, 19.08.2015
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015.
All Rights Reserved.
IMPORTANT NOTICE
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characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-
infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility
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the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact
your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
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Due to technical requirements products may contain dangerous substances. For information on the types in
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expected to result in personal injury.
SIGC158T120R3E
L7698M, L7698T, L7698E 9 Rev. 2.3, 19.08.2015
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
