IG BT TRENCHSTOPTM IGBT3 Chip SIGC158T120R3E Dat a She et Indust rial Po wer C o ntrol SIGC158T120R3E Table of Contents Features and Applications ............................................................................................................................... 3 Mechanical Parameters .................................................................................................................................... 3 Maximum Ratings ............................................................................................................................................. 4 Static and Electrical Characteristics .............................................................................................................. 4 Further Electrical Characteristics ................................................................................................................... 5 Chip Drawing ..................................................................................................................................................... 6 Revision History ............................................................................................................................................... 7 Relevant Application Notes ............................................................................................................................. 7 Legal Disclaimer ............................................................................................................................................... 8 L7698M, L7698T, L7698E 2 Rev. 2.3, 19.08.2015 SIGC158T120R3E TRENCHSTOPTM IGBT3 Chip Features: 1200V trench & field stop technology Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling Recommended for: Power modules Applications: Drives Chip Type VCE ICn 1 Die Size Package SIGC158T120R3E 1200V 150A 12.56mm x 12.56mm Sawn on foil Mechanical Parameters Die size 12.56 x 12.56 Emitter pad size See chip drawing mm Gate pad size 2 1.320 x 0.821 Area total 157.75 Thickness 140 m Wafer size 200 mm Maximum possible chips per wafer 156 Passivation frontside Photoimide Pad metal 3200nm AlSiCu Ni Ag - system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Backside metal Die bond Electrically conductive epoxy glue and soft solder Wire bond Al, 500m 0.65mm; max. 1.2mm Reject ink dot size for original and sealed MBB bags Ambient atmosphere air, temperature 17C - 25C, <6 months Storage environment for open MBB bags 1 Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas, humidity <25%RH, temperature 17C - 25C, <6 months Nominal collector current at TC=100C for chip packaged in power modules, see application example cited on page 5. L7698M, L7698T, L7698E 3 Rev. 2.3, 19.08.2015 SIGC158T120R3E Maximum Ratings Parameter Symbol Value Unit VCE 1200 V IC - A Pulsed collector current, tp limited by Tvj max 3 IC,puls 450 A Gate-emitter voltage VGE 20 V Junction temperature range Tvj -55 ... +175 C Operating junction temperature Tvj -55 ... +150 C tsc 10 s Collector-emitter voltage, Tvj=25C DC collector current, limited by Tvj max 2 Short circuit data 3/ 4 VGE=15V, VCC=900V, Tvj=125C IC,max=300A, VCE,max=1200V, Tvj125C 3 Reverse bias safe operating area (RBSOA) Static Characteristics (tested on wafer), Tvj=25C Parameter Symbol Conditions Collector-emitter breakdown voltage V(BR)CES Collector-emitter saturation voltage Gate-emitter threshold voltage Value Unit min. typ. max. VGE=0V, IC=6mA 1200 - - VCEsat VGE=15V, IC=45A 0.98 1.19 1.37 VGE(th) IC=6mA, VGE=VCE 5.0 5.8 6.5 Zero gate voltage collector current ICES VCE=1200V, VGE=0V - - 20 A Gate-emitter leakage current IGES VCE=0V, VGE=20V - - 600 nA rG Integrated gate resistor V 5 Electrical Characteristics 3 Parameter Symbol Conditions VCEsat VGE=15V, IC=150A Input capacitance Cies Reverse transfer capacitance Cres VCE=25V, VGE=0V, f=1MHz Tvj=25C Collector-emitter saturation voltage Tvj=25C Tvj=125C Value min. typ. max. 1.4 1.7 2.1 - 2.0 - - 10766 - - 488 - Unit V pF 2 Depending on thermal properties of assembly. Not subject to production test - verified by design/characterization. 4 Allowed number of short circuits: <1000; time between short circuits: >1s. 3 L7698M, L7698T, L7698E 4 Rev. 2.3, 19.08.2015 SIGC158T120R3E Further Electrical Characteristics Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example L7698M, L7698T, L7698E FS150R12KE3 5 Rev. 3.1 Rev. 2.3, 19.08.2015 SIGC158T120R3E Chip Drawing E E E E G T E E E E E = Emitter G = Gate T = Test pad do not contact L7698M, L7698T, L7698E 6 Rev. 2.3, 19.08.2015 SIGC158T120R3E Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the application at package level, including RBSOA and SCSOA. Description AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Revision Subjects (major changes since last revision) Date 2.0 Release of final datasheet, change wafer size to 200mm 30.04.2010 2.1 Additional basic types L7698M, L7698T, L7698E; new gate pad design 02.07.2014 2.2 Minor changes, chip drawing, 100% VCEsat test conditions 06.02.2015 2.3 Update disclaimer 19.08.2015 Relevant Application Notes L7698M, L7698T, L7698E 7 Rev. 2.3, 19.08.2015 SIGC158T120R3E Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. L7698M, L7698T, L7698E 8 Rev. 2.3, 19.08.2015 SIGC158T120R3E w w w . i n f i n e o n . c o m L7698M, L7698T, L7698E Published by Infineon Technologies AG 9 Rev. 2.3, 19.08.2015