BSC072N03LD G OptiMOSTM3 Power-Transistors Product Summary Features V DS 30 V * Dual N-channel, logic level R DS(on),max 7.2 m * Fast switching MOSFETs for SMPS ID 20 A PG-TDSON-8 * Optimized technology for DC/DC converters * Qualified according to JEDEC1) for target applications * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * 100% avalanche tested * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type Package Marking BSC072N03LD G PG-TDSON-8 072N03LD Maximum ratings, at T j=25 C, unless otherwise specified Parameter Value Symbol Conditions 10 secs Continuous drain current ID steady state V GS=10 V, T C=25 C 20 V GS=10 V, T C=100 C 20 V GS=4.5 V, T C=25 C 20 V GS=4.5 V, T C=100 C 20 V GS=10 V, T A=25 C3) Unit 17.9 A 11.5 Pulsed drain current2) I D,pulse T C=25 C 80 Avalanche energy, single pulse E AS I D=20 A, R GS=25 90 mJ Gate source voltage V GS 20 V Power dissipation P tot 57 W T C=25 C T A=25 C3) Operating and storage temperature T j, T stg Rev. 1.4 1.5 -55 ... 150 C 55/150/56 IEC climatic category; DIN IEC 68-1 1) 3.6 J-STD20 and JESD22 page 1 2009-10-23 BSC072N03LD G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.2 Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction ambient, 6 cm cooling area 3) R thJA K/W 20 t10 s - - 35 steady state - - 85 30 - - Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 7.5 9.4 m V GS=10 V, I D=20 A - 6.0 7.2 - 1.5 2.3 28 57 - S Gate resistance RG Transconductance g fs 2) |V DS|>2|I D|R DS(on)max, I D=20 A See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. One transistor active. Rev. 1.4 page 2 2009-10-23 BSC072N03LD G Parameter Values Symbol Conditions Unit min. typ. max. - 2600 3500 - 920 1200 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 49 - Turn-on delay time t d(on) - 6.0 - Rise time tr - 4.0 - Turn-off delay time t d(off) - 25 - Fall time tf - 4.0 - Gate to source charge Q gs - 7.2 - Gate charge at threshold Q g(th) - 3.8 - Gate to drain charge Q gd - 3.4 - Switching charge Q sw - 6.8 - Gate charge total Qg - 15 20 Gate plateau voltage V plateau - 3.0 - Gate charge total Qg V DD=15 V, I D=20 A, V GS=0 to 10 V - 31 41 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 13 - Output charge Q oss V DD=15 V, V GS=0 V - 24 - - - 20 - - 80 V DD=15 V, V GS=10 V, I D=20 A, R G=1.6 pF ns Gate Charge Characteristics 4) V DD=15 V, I D=20 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 C - 0.87 1.1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - - 10 nC 4) Rev. 1.4 T C=25 C A See figure 16 for gate charge parameter definition page 3 2009-10-23 BSC072N03LD G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 60 25 50 20 40 I D [A] P tot [W] 15 30 10 20 5 10 0 0 0 40 80 120 160 0 40 80 T C [C] 120 160 T C [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 s 102 10 s Z thJC [K/W] I D [A] 100 s DC 10 0.5 1 10 ms 1 1 ms 0.2 0.1 0.05 0.1 10 0.02 0 0.01 single pulse 10-1 10-1 100 101 102 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.4 0.01 page 4 2009-10-23 BSC072N03LD G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 80 20 10 V 70 5V 4.5 V 3V 60 15 3.2 V 3.5 V 4V R DS(on) [m] I D [A] 50 40 30 3.5 V 10 4V 4.5 V 3.2 V 10 V 20 5V 5 3V 10 2.8 V 0 0 0 1 2 3 0 10 V DS [V] 20 30 20 30 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 80 80 70 70 60 60 50 50 g fs [S] I D [A] parameter: T j 40 30 30 20 20 150 C 10 10 25 C 0 0 0 1 2 3 4 5 0 10 I D [A] V GS [V] Rev. 1.4 40 page 5 2009-10-23 BSC072N03LD G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 12 2.5 10 2 98 % 6 V GS(th) [V] R DS(on) [m] 8 typ 1.5 1 4 0.5 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 150 C, 98% Ciss 25 C Coss I F [A] C [pF] 103 10 150 C 25 C, 98% 10 2 Crss 101 1 0 10 20 30 Rev. 1.4 0.0 0.5 1.0 1.5 2.0 V SD [V] V DS [V] page 6 2009-10-23 BSC072N03LD G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 V GS=f(Q gate); I D=20 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 24 V 25 C 10 8 100 C I AV [A] V GS [V] 125 C 1 6 4 2 0.1 0 1 10 100 1000 0 10 20 30 40 Q gate [nC] t AV [s] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 V BR(DSS) [V] 30 28 26 V g s(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [C] Rev. 1.4 page 7 2009-10-23 BSC072N03LD G Package Outline and Footprint Rev. 1.4 PG-TDSON-8 dual page 8 2009-10-23 BSC072N03LD G Tape PG-TDSON-8 Dimensions in mm Rev. 1.4 page 9 2009-10-23 BSC072N03LD G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. 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