168 Transistors
Part
Number
Absolute Maximum Ratings (Ta=25°C)
V
CES
(V)
V
GE
(V)
I
C
(A)
IC(pulse)
(A)
P
C
(Ta=25°C)
(W)
I
GES
I
CES
V
GE(th)
Cies Coes Cres
(nA)
max (V)
min max (V)
typ (pF)
typ (pF)
typ
(pF)
typmax
Conditions
V
GE
(V) IC
Conditions
V
CE
V
CE(sat)
IC
Conditions
V
GE
(V)(mA) (V)(A)(V)
(µA)
max
Conditions
VCE
Conditions
V
CE
V
GE
(V) (V)
FGM603 600 ±20 30 90 60 ±100 ±20 100 600 4 7 1 10 1.6 2.0
FGM623S 600 ±30 30 100 60 ±500 ±30 100 600 3 6 1 10 1.5 1.7
FGT312 330 ±30 20 120 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7
FGT313 330 ±30 30 200 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7
FGT412 400 ±30 20 120 35 ±100 ±30 100 400 3 6 1 10 1.4 1.8
FGT612 600 ±30 20 120 35 ±100 ±30 100 600 3 6 1 10 1.6 2.0
MGD623N 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.7 2.3
MGD623S 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.8 2.4
30 15 4600 110 80 20 0
30 15 2500 150 80 20 0
20 15 1200 130 65 20 0
30 15 2400 110 60 30 0
20 15 1200 120 65 20 0
20 15 1200 80 40 20 0
50 15 2500 150 80 20 0
50 15 2500 150 80 20 0
2-3 IGBT
Specifications List by Part Number
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169
Transistors
Electrical Characteristics (Ta=25°C)
Package
Mass
(g)
td
(on)
VF trr
Conditions
typ
(ns)
tr
typ
(ns)
td
(off)
typ
(ns)
tf
typ
(ns)
Qg
typ
(nC)
Qge
typ
(nC)
Qgc
typ
(nC) Conditions (V)
Conditions
Conditions
(µs)
typ
typ max
130 70 340 200 30 300 L Load 120 30 30 30 300 15
100 80 300 120 30 300 L Load 65 20 20 30 300 15
15 30 55 210 20 150 R Load 35 8 10 20 150 15
20 90 90 180 60 250 R Load 65 10 20 60 250 15
15 35 55 220 20 200 R Load 35 8 10 20 200 15
25 60 70 190 20 300 R Load 35 6 9 20 300 15
75 70 250 200 50 300 L Load 65 15 20 50 300 15
75 70 250 120 50 300 L Load 65 15 20 50 300 15
TO3PF(FM100) 6.5
TO3PF(FM100) 6.5
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
TO220F(FM20) 2.0
1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0
Built-in Di
1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0
Built-in Di
I
C
(A) V
CE
(V) I
C
(A) V
CE
(V) V
GE
(V) I
F
(A) di/dt
(A/µs)
I
F
(A)
2-3 IGBT
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