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2SA2058

2013-11-01

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2058

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

• High DC current gain: hFE = 200 to 500 (IC = −0.2 A)

• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

• High-speed switching: tf = 25 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −20 V

Collector-emitter voltage VCEO −10 V

Emitter-base voltage VEBO −7 V

DC IC −1.5

Collector current

Pulse ICP −2.5

Base current IB −150 mA

DC 500

Collector power

dissipation t = 10 s

(Note) 750

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3S1C

Weight: 0.01 g (typ.)

Start of commercial production

2000-11

2SA2058

2013-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = −20 V, IE = 0 ⎯ ⎯ −100 nA

Emitter cut-off current IEBO V

EB = −7 V, IC = 0 ⎯ ⎯ −100 nA

Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V

hFE (1) VCE = −2 V, IC = −0.2 A 200 ⎯ 500

DC current gain

hFE (2) VCE = −2 V, IC = −0.6 A 125 ⎯ ⎯

Collector-emitter saturation voltage VCE (sat) I

C = −0.6 A, IB = −20 mA ⎯ ⎯ −0.19 V

Base-emitter saturation voltage VBE (sat) I

C = −0.6 A, IB = −20 mA ⎯ ⎯ −1.10 V

Collector output capacitance Cob V

CB = −10 V, IE = 0, f = 1 MHz ⎯ 12 ⎯ pF

Rise time tr ⎯ 50 ⎯

Storage time tstg ⎯ 115 ⎯

Switching time

Fall time tf

See Figure 1 circuit diagram.

VCC

∼

−

−6 V, RL = 10 Ω

−IB1 = IB2 = −20 mA ⎯ 25 ⎯

Marking

Figure 1 Switching Time Test Circuit &

Timin

Chart

IB2

IB1

20 μs

Output

Input

IB2

IB1

VCC

Duty cycle < 1%

W M

Part No. (or abbreviation code)

Lot code (month)

Lot code (year)

Dot: even year

No dot: odd year

2SA2058

2013-11-01

Collector current IC (A)

Base-emitter saturation voltage

VBE (sat) (V)

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

hFE – IC

DC current gain hFE

Collector current IC (A)

VCE (sat) – IC

Collector-emitter saturation voltage

VCE (sat) (V)

Collector current IC (A)

VBE (sat) – IC

Base-emitter voltage VBE (V)

IC – VBE

−0.01

−0.001 −0.01 −0.1 −1

−0.1

−1

−10

Common emitter

IC/IB = 30

Single nonrepetitive pulse

Ta = 100°C

−55

−0.001

−0.001 −0.01 −0.1 −1

−0.01

−0.1

−1

Common emitter

IC/IB = 30

Single nonrepetitive pulse

Ta = 100°C

−55

−0.4

−0.4 −0.8 −1.2 −1.6

−0.8

−1.2

−1.6

−2.0

Common emitter

VCE = −2 V

Single nonrepetitive

pulse

Ta = 100°C

−55 25

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

−0.4

−0.8

−1.2

−1.6

−2.0

−2.4

IB = −2 mA

Common emitter

Ta = 25°C

Single nonrepetitive

pulse

−4

−6

−8

−10

−20

−40 −60 −80

−0.001 −0.01 −0.1 −1

100

1000

10000 Common emitter

VCE = −2 V

Single nonrepetitive

pulse

Ta = 100°C

−55

2SA2058

2013-11-01

Pulse width tw (s)

rth – tw

Transient thermal resistance

rth (°C/W)

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

0.001 0.01 0.1 1 10 100 1000

1000

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm2)

100

−0.01

−0.1 −1 −10 −100

−0.1

−1

−10

IC max (pulsed) ♦

DC operation *

(Ta = 25°C)

VCEO max

IC max

(

continuous

)

10 s♦*

10 ms♦ 1 ms♦

100 ms♦*

♦: Single nonrepetitive pulse

Ta = 25°C

Note that the curves for

100 ms*, 10 s* and DC

operation* will be different when

the devices aren’t mounted on an

FR4 board (glass epoxy, 1.6 mm

thick, Cu area: 645 mm2). These

characteristic curves must be

derated linearly with increase in

temperature.

2SA2058

2013-11-01

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

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