PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Data Sheet 1 of 11 Rev. 05, 2008-05-15
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA192001E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 1930 – 1990 MHz
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Output Power, avg. (dBm)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
IM3
PTFA192001F
Package H-37260-2
Features
•Pb-free, RoHS-compliant and thermally-enhanced
packages
•Broadband internal matching
•Typical two-carrier WCDMA performance at 1990
MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.9 dB
- Efficiency = 27%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
•Typical single-carrier WCDMA performance at 1960
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 48.5 dBm
- Linear Gain = 15.9 dB
- Efficiency = 34%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –40 dBc
•Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 57%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.8 A, POUT = 50 W average
ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.3 15.9 —dB
Drain Efficiency ηD26.5 27 —%
Intermodulation Distortion IMD —–36 –34 dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15.9 —dB
Drain Efficiency ηD—41 —%
Intermodulation Distortion IMD —–30 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS ——10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.05 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.8 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD625 W
Above 25°C derate by 3.57 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.28 °C/W
Data Sheet 3 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Intermodulation Distortion Products v. Output Power
VDD = 30 V, IDQ = 1600 mA,
ƒ1 = 1957.5 MHz, ƒ2 = 1962.5 MHz
-60
-50
-40
-30
-20
10 100 1000
Output Power, PEP (W)
IM5
IM7
Intermodulation Distortion (dBc)
IM3
Up
Low
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
10
15
20
25
30
35
40
1860 1890 1920 1950 1980 2010 2040
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
*See Infineon distributor for future availability.
Ordering Information
Type and Version Package Type Package Description Marking
PTFA192001E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA192001E
PTFA192001F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA192001F
Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Output Power, PEP (dBm)
3rd Order IMD (dBc)
1.6 A
1.4 A
2.0 A
1.8 A
2.2 A
Typical Performance (cont.)
2-Tone Drive-up
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-60
-55
-50
-45
-40
-35
-30
-25
42 44 46 48 50 52 54 56
Output Power, PEP (dBm)
10
15
20
25
30
35
40
45
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1800 mA, ƒ = 1990 MHz
12
13
14
15
16
17
040 80 120 160 200 240
Output Power (W)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Gain
Efficiency TCASE = 25°C
TCASE = 90°C
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ
= 1800 mA , ƒ = 1960 MHz,
POUT = 53 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Data Sheet 5 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
0.001
0.01
0.1
1
10
100
1 2 3 4 5 6 7 8
Peak-to-Average (dB)
Probability (%)
52 dBm
50.5 dBm
50 dBm
48 dBm
46 dBm
Input
Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz
12
13
14
15
16
17
18
110 100 1000
Output Power (W)
Power Gain (dB)
-15C
25C
85C
Voltage Sweep
IDQ
= 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-50
-40
-30
-20
-10
23 25 27 29 31 33
Supply Voltage (V)
3rd Order Intermodulation
Distortion (dBc)
10
20
30
40
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Data Sheet 6 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1900 8.033 –8.054 0.943 2.60
1930 7.611 –7.612 0.932 2.87
1960 7.230 –7.197 0.886 3.15
1990 6.839 –6.839 0.863 3.44
2020 6.541 –6.496 0.829 3.71
See next page for circuit information
Broadband Circuit Impedance
0.1
0
.
2
0.1
0.1
N
-
-
-
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
2020 MHz
1900 MHz
Z Load
1900 MHz
Z Source
2020 MHz
Z0 = 50 Ω
Data Sheet 7 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT PTFA192001E or PTFA192001F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 1960 MHz1Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.038 λ, 50.0 Ω3.51 x 1.70 0.138 x 0.067
l20.071 λ, 50.0 Ω6.60 x 1.70 0.260 x 0.067
l30.022 λ, 43.0 Ω2.01 x 2.16 0.079 x 0.085
l4 (taper) 0.060 λ, 43.0 Ω / 6.9 Ω5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800
l50.040 λ, 6.9 Ω3.33 x 20.32 0.131 x 0.800
l60.026 λ, 6.9 Ω2.21 x 20.32 0.087 x 0.800
l7, l80.123 λ, 60.0 Ω11.48 x 1.24 0.452 x 0.049
l9, l10 0.258 λ, 50.9 Ω23.88 x 1.65 0.940 x 0.065
l11 0.067 λ, 5.0 Ω5.59 x 28.91 0.220 x 1.138
l12 (taper) 0.017 λ, 5.0 Ω / 7.2 Ω1.42 x 28.91 / 19.51 0.056 x 1.138 / 0.768
l13 (taper) 0.024 λ, 7.2 Ω / 12.3 Ω2.08 x 19.51 / 10.67 0.082 x 0.768 / 0.420
l14 (taper) 0.019 λ, 12.3 Ω / 41 Ω1.78 x 10.67 / 2.29 0.070 x 0.420 / 0.090
l15 0.009 λ, 41.0 Ω0.79 x 2.29 0.031 x 0.090
l16 0.021 λ, 41.0 Ω1.85 x 2.29 0.073 x 0.090
l17 0.096 λ, 50.0 Ω8.99 x 1.70 0.354 x 0.067
1Electrical characteristics are rounded.
a192001ef_sc h
RF_OUT
RF_IN
C7
10pF
l1
l7
DUT
C4
4.7µF
16V
C5
0.1µF
C6
10pF
L1
C24
0.7pF
C23
0.7pF C28
10pF
C17
10pF
C19
1µF
C18
1µF
C22
10µF
50V
C20
2.2µF
C21
0.1µF
L2
C26
0.7pF
C25
0.7pF
C27
0.7pF
C11
10pF
C13
1µF
C12
1µF
C16
10µF
50V
C14
2.2µF
C15
0.1µF
l2l3l6l5
l8
C8
4.7µF
16V
C9
0.1µF
C10
10pF
R7
5.1K V
l11 l12 l13 l14 l15 l16 l17
l9
l10
VDD
l4
VDD
R3
2K V
R5
2K V
R8
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
R1
1.2K V
C1
0.001µFQQ1
LM7805
R6
5.1K V
Data Sheet 8 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C8 Capacitor, 4.7 µF, 16 V Digi-Key PCS3475CT-ND
C5, C9, C15, C21 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C10 Ceramic capacitor, 10 pF ATC 100A 100
C7, C28 Ceramic capacitor, 10 pF ATC 100B 100
C11, C17 Capacitor, 10 pF AVX 08051J100GBTTR
C12, C13, C18, C19 Ceramic capacitor, 1 µF Digi-Key 445-1411-1-ND
C14, C20 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C16, C22 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C23, C24, C25, Capacitor, 0.7 pF AVX 08051J0R7BBTTR
C26, C27
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infinion Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R5 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R8 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
a192001ef_assy
RF_IN RF_OUT
VDD
VDD
C3
C1
C7
C15
C12
C21
C28
C13
C14
C19
C18
C20
R6
R7
R3
R5
C9 C10
C5 C6
C11
C17
C27
C26
C24
C25
C23
C4
C8
R1
R2
C2
A192001in_01
RO4350_.030
A192001out_01
L1
L2
C22
QQ1 Q1
RO4350_.030
C16
R8
VDD
*Gerber files for this circuit available on request
Data Sheet 9 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.25 [0.01] / ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C
L
C
L
h-36+37260-2_36260 / 04-25-08
0.0381 [.0015] -A-
22.35±0.23
[.880±.009]
4.83±0.50
[.190±.020]
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[R.060]
34.04
[1.340]
D
S
G
FLANGE 13.72
[.540]
45° X 2.03
[.080]
SPH 1.57
[.062]
2X R1.63
[R.064]
4.11±0.38
[.162±.015]
27.94
[1.100]
C
L
1.02
[.040]
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
Data Sheet 10 of 11 Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.25 [0.01] / ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
+0.10
LID 13.21–0.15
+.004
[.520 ]
–.006
C
L
C
L
h-36+37260-2_37260 / 04-25-08
SPH 1.57
[.062]
23.37±0.51
[.920±.020]
2X 12.70
[.500]
45° X 2.031
[.080]
D
G
S
-A-
4.11±0.38
[.162±.015]
LID 22.35±0.23
[.880±.009]
FLANGE 23.11
[.910]
13.72
[.540]
4.83±0.50
[.190±.020]
0.0381 [.0015]
+0.381
4X R0.508–0.127
+.015
[R.020 ]
–.005
1.02
[.040]
Data Sheet 11 of 11 Rev. 05, 2008-05-15
PTFA192001E/F
Confidential, Limited Internal Distribution
Revision History: 2008-05-15 Data Sheet
Previous Version: 2007-12-06, Data Sheet
Page Subjects (major changes since last revision)
1, 3, 9, 10 Update to product V4. Update package outline diagrams.
1, 2 Update specifications.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-05-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2006 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International