Philips Semiconductors Schottky barrier (double) diodes FEATURES Low forward voltage Guard ring protected e Smail SMD package. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes. DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. PINNING Product specification BAT54 series PIN MARKING MARKING TYPE NUMBER CODE BAT54 L4p BAT54A L42 BAT54C L43 BAT54S L44 1996 Mar 19 Top view MGC421 Fig.1 Simplified outline (SOT23) and pin configuration. py MEC3O Fig.3 BAT54A diode configuration (symbol). a MCT Fig.4 BATS4C diode configuration (symbol). Fig.2 BAT54 single diode configuration (symbol). ep. MCSEB Fig.5 BAT54S diode configuration (symbol). 2-42 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT54 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode Vr continuous reverse voitage ~ 30 Vv le continuous forward current - 200 mA leam repetitive peak forward current ts1s,6s05 - 300 mA lesm non-repetitive peak forward current t<10ms - 600 mA Prot total power dissipation (per package) Tamp S$ 25 C - 230 mw Tstg storage temperature 65 +150 (C Tj junction temperature - 125 C ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode Ve forward voltage see Fig.6 lp =0.1 MA 240 mv lF=1mA 320 mv Ip =10mA 400 mV Ip = 30 mA 500 mV ip = 100 MA 800 mV In reverse current Vr = 25 V; see Fig.7 2 pA tr reverse recovery time when switched from Ir = 10 mA | 5 ns to In = 10 mA; R, = 100 Q; measured at I_ = 1 mA; see Fig.9 Ca diode capacitance f= 1MHz; Vp =1V; see Fig.8 | 10 pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rithj-a thermal resistance fram junction to ambient | note 1 500 KAW Note 1. Refer to SOT23 standard mounting conditions. 1996 Mar 19 2-43 Philips Semiconductors Schottky barrier (double) diodes Product specification BAT54 series GRAPHICAL DATA 403 IF (mA) 10 1071 0 (1) Tam = 125 C. (2) Tamb = 85C. (3) Tam = 25C. Fig.6 Forward current as a function of forward voltage; typical values. 103 (uA) 102 10-1 0 10 20 30 VR ) (1) Tamp = 125 C. (2) Temp = 85 C. (3) Tame = 25 C. Fig.7 Reverse current as a function of reverse voltage; typical values. MSAGS1 20 Va f=1 MHz; Tam = 25 C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Reverse recovery definitions. 1996 Mar 19