BGS12A
SPDT RF Switch
Preliminary Data Sheet, V1.1, Sep. 2007
Small Signal Discretes
Edition 2007-09-14
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
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BGS12A
SPDT RF Switch
Preliminary Data Sheet 3 V1.1, 2007-09-14
BGS12A
Revision History: 2007-09-14, V1.1
Previous Version: 2006-10-19, V1.0
Page Subjects (major changes since last revision)
All Document layout change
Preliminary Data Sheet 4 V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
BGS12A
Description
The BGS12A General Purpose RF MOS switch is designed to cover a broad range of applications from 0.1 to
3 GHz. The symmetric design of its single pole double throw configuration, as shown in Figure 1 offers high design
flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL
compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level
of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.3 dB
in the 1 GHz and 0.6 dB in the 2 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied
externally.
The BGS12A RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
Figure 1 Functional Diagram
Features
• Low insertion loss
• High port-to-port-isolation
• Low harmonic generation
• On-chip control logic
• Lead free solder bumps
• High ESD robustness
• No external components required
• General purpose switch for applications up to 3 GHz
• Pb-free (RoHS compliant) package
Type Package Marking Chip
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SPDT RF Switch
BGS12A
Preliminary Data Sheet 5 V1.1, 2007-09-14
Table 1 Maximum Ratings
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Storage temperature range Tstg -65 150 °C
DC Voltage at all pins to GND VDC 5V
RF power max. at all RF ports PIN 24 dBm
ESD Capability
Human Body-Model IEC61340-3-1
Machine-Model IEC61340-3-2
VESD 1000
100
V
Table 2 Operation Ranges
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Ambient temperature TA-30 85 °C
RF Frequency f0.1 3 GHz
Control voltage low VCtrL -0.3 0.3 V
Control voltage high VCtrlH 1.4 2.8 V
Supply voltage1)
1) Supply voltage must be connected before Control Voltage
Vdd tbd 2.8 V
Current consumption Vdd Pin (over
temperature)
IVdd 80 350 µA
Current Consumption Vctrl Pin ICtrl 30 µA
Power Range
(VSWR ∞: 1))
(VSWR 3: 1)
(VSWR 1: 1)
Pin
15
18
21
dBm
Preliminary Data Sheet 6 V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Figure 2 Pinning
Table 3 Pin description
Pin Name Description
1RF1RF Port 1 Out
2 GND Ground
3RF2RF Port 2 Out
4 CTRL Control Pin
5 RFIN RF Port In
6 Vdd Supply Voltage
Table 4 Truth Table
Ctrl 1 RF 1 RF 2
01 0
10 1
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BGS12A
SPDT RF Switch
BGS12A
Preliminary Data Sheet 7 V1.1, 2007-09-14
Electrical Specifications
• Termination port impedance: Z0 = 50 Ω
• Temperature range: T = 25 °C
• Supply Voltage: Vdd = 2.8 V
•Pin = 15 dBm
• Across operating range of control voltages: VCtrH = 1.4...2.8 V
Table 5 Electrical Characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Insertion Loss1)
1) With external matching at antenna port
IL 0.3 dB f=1GHzTX
0.6 dB f=2GHzTX
0.4 dB f=1GHz TX,
TA=85°C
0.8 dB f=2GHz TX,
TA=85°C
Return Loss RL 15 dB f=1GHz
10 dB f=2GHz
Isolation RFin - RF1 ISORFin-RF1 30 34 dB f=1GHz
22 27 dB f=2GHz
Isolation RFin - RF2 ISORFin-RF2 30 34 dB f=1GHz
22 27 dB f=2GHz
Isolation RF1 - RF2 ISORF1-RF2 30 43 dB f=1GHz
28 34 dB f=2GHz
Isolation RF ports - Vdd, Vctrl ISORF-DC 30 35 dB f=1GHz
20 35 dB f=2GHz
Harmonic Generation up to 12.75 GHz PHarm -75 -50 dBm f=1GHz
-80 -50 dBm f=2GHz
On Switching Time (10-90%) RF ton 4µsf=1GHz
Off Switching Time (10-90%) RF toff 4µsf=1GHz
Current Consumption at Vdd Pin Idd 120 µA
Input 0.1 dB compression P0.1dB 21 dBm f=1GHz
Preliminary Data Sheet 8 V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Package Outlines
Figure 3 Package outline
Figure 4 Solder bumps
Dimensions in mm
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”:
http://www.infineon.com/products.
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110 ± 13µm
bump height:
90 ± 14µm
chip height:
250µm
UBM 80 ±4 µm
Solderbump Material: SnAg (96.5/2.5)
BGS12A_Solder _Bumps.vsd
