IRAMS06UP60B-2 - International Rectifier

IRAMS06UP60B

Series

6A, 600V

with Internal Shunt Resistor

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Features

•Internal Shunt Resistor

•Integrated Gate Drivers and Bootstrap Diodes

•Temperature Monitor

•Overcurrent shutdown

•Fully Isolated Package.

•Low VCE(on) Non Punch Through IGBT Technology

•Undervoltage lockout for all channels

•Matched propagation delay for all channels

•Schmitt-triggered input logic

•Cross-conduction prevention logic

•Lower di/dt gate driver for better noise

immunity

•Motor Power range 0.1~0.5kW / 85~253 Vac

•Isolation 2000VRMS /1min

Plug N DriveTM Integrated Power

Module for Appliance Motor Drive

Description

International Rectifier’s IRAMS06UP60B is an Integrated Power Module developed and optimized for

electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and

freezer or in heating and ventilation as electronic fan controls. The IRAMS06UP60B offers an extremely

compact, high performance AC motor-driver in a single isolated package for a very simple design.

An internal shunt is included and offers easy current feedback and overcurrent monitor for precise control

and safe operation. A built-in temperature monitor and over-current protection, along with the short-circuit

rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe

operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity

power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further

cost reduction advantages.

PD-95832 RevC

Absolute Maximum Ratings

Note 1: Limited by current protection, see table "Inverter Section Electrical Characteristics" on page 3

Parameter Description Max. Value Units

VCES Maximum IGBT Blocking Voltage 600

V+Positive Bus Input Voltage 450

Io @ TC=25°C RMS Phase Current 6

Io @ TC=100°C RMS Phase Current 3

Ipk Max Peak Phase Current (tp<100ms) (see Note 1) 9

FpMaximum PWM Carrier Frequency 20 kHz

PdMaximum Power dissipation per Phase 7.5 W

Viso Isolation Voltage (1min) 2000 VRMS

TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150

TJ (Driver IC) Operating Junction temperature Range -40 to +150

TMounting torque Range (M3 screw) 0.8 to 1.0 Nm

°C

IRAMS06UP60B

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23 VS1

24 HO1

25 VB1

1 VCC

2 HIN1

3 HIN2

4 HIN3

5 LIN1

LIN2

LIN3

ITRIP

RCIN

VSS

COM

VB2

HO2

VS2

VB3

HO3

VS3

V- (12)

VB1 (7)

U, VS1 (8)

VB2 (4)

V, VS2 (5)

VB3 (1)

W, VS3 (2)

VCC (14)

VSS (23)

Driver IC

LO1 16

LO3 14

LO2 15

ITRIP (22)

HIN1 (15)

HIN2 (16)

HIN3 (17)

LIN1 (18)

LIN2 (19)

LIN3 (20)

V (10)+

VTH (13) THERMISTOR

FLT-EN(21)

Internal Electrical Schematic - IRAMS06UP60B

IRAMS06UP60B

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Inverter Section Switching Characteristics @ TJ = 25°C

Thermal Resistance

Inverter Section Electrical Characteristics @ TJ = 25°C

Symbol Parameter Min Typ Max Units

Eon Turn-On Switching Loss --- 130 235

Eoff Turn-Off Switching Loss --- 65 120

Etot Total Switching Loss --- 195 355 TJ=25°C

Eon Turn-on Swtiching Loss --- 200 345 TJ=150°C

Eoff Turn-off Switching Loss --- 90 150

Etot Total Switching Loss --- 290 495

Erec Diode Rev. Recovery energy --- 50 110 µJ

trr Diode Reverse Recovery time --- 150 200 ns

RBSOA Reverse Bias Safe Operating

Area

SCSOA Short Circuit Safe Operating

Area 10 --- --- µs

FULL SQUARE

TJ=150°C, IC=3A, VP=600V

V+=480V, VDD=+15V to 0V

See CT3

Conditions

IC=3A, V+=400V

VDD=15V, L=1mH

See CT1

Energy losses include "tail" and

diode reverse recovery

TJ=150°C, VP=600V,

V+=360V, VDD=+15V to 0V

See CT2

µJ

TJ=150°C, V+ =400V VDD=15V,

IF=3A, L=1mH

Symbol Parameter Min Typ Max Units Conditions

Rth(J- C)

Junction to case thermal

resistance, each IGBT under

inverter operation.

--- --- 6.5 °C/W

Rth(J- C)

Junction to case thermal

resistance, each Diode under

inverter operation.

--- --- 9 °C/W

Rth(C-S) Case to sink thermal resistance --- 0.1 --- °C/W

Flat,

reased surface.

Heatsink compound thermal

conductivity - 1W/mK

Symbol Parameter Min Typ Max Units Conditions

V(BR)CES

Collector-to-Emitter Breakdown

Voltage 600 --- --- V VIN=5V, IC=250µA

∆V(BR)CES / ∆TTemperature Coeff. Of

Breakdown Voltage --- 0.3 --- V/°C VIN=5V, IC=1.0mA

(25°C - 150°C)

--- 1.9 2.4 IC=3A, VDD=15V

--- 2.2 2.6 IC=3A, VDD=15V, TJ=150°C

--- 15 45 VIN=5V, V+=600V

--- 60 170 VIN=5V, V+=600V, TJ=150°C

Ilk_module

Zero Gate Phase-to-Phase

Current -- -- 50 µAV

IN=5V, V+=600V

--- 1.45 1.85 IC=3A

--- 1.25 1.65 IC=3A, TJ=150°C

IBUS_Trip

Current Protection Threashold

(positive going) 8.5 --- 10.5 A Tj=-40°C to 150°C (Overcurrent

duration ≥ 6µs)

µA

VCE(ON)

ICES

VFM

Collector-to-Emitter Saturation

Voltage

Zero Gate Voltage Collector-to-

Emitter Current

Diode Forward Voltage Drop

IRAMS06UP60B

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Static Electrical Characteristics Driver Function

VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are appli-

cable to all six channels. (Note 2)

Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within

the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies bi-

ased at 15V differential (Note 2). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor

to VDD.

Absolute Maximum Ratings Driver Function

Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage pa-

rameters are absolute voltages referenced to . (Note 2)

VSS

Symbol Definition Min Max Units

VS1,2,3 High Side offset voltage -0.3 600 V

VB1,2,3 High Side floating supply voltage -0.3 20 V

VDD Low Side and logic fixed supply voltage -0.3 20 V

VIN Input voltage LIN, HIN, T/ITRIP -0.3 VSS+15 V

TJJuction Temperature -40 150 °C

Symbol Definition Min Max Units

VB1,2,3 High side floating supply voltage VS+12 VS+20

VS1,2,3 High side floating supply offset voltage Note 3 450

VDD Low side and logic fixed supply voltage 12 20 V

VIN Logic input voltage LIN, HIN VSS VSS+5 V

Symbol Definition Min Typ Max Units

VIN,th+ Positive going input threshold 3.0 --- --- V

VIN,th- Negative going input threshold --- --- 0.8 V

IQBS Quiescent VBS supply current --- 70 120 µA

IQCC Quiscent VCC supply current --- 1.6 2.3 mA

ILK Offset Supply Leakage Current --- --- 50 µA

IIN+ Input bias current (OUT=LO) --- 100 220 µA

IIN+ Input bias current (OUT=HI) --- 200 300 µA

V(ITRIP)I

TRIP threshold Voltage (OUT=HI or OUT=LO) 0.44 0.49 0.54 V

10.6 11.1 11.6

VCC and VBS supply undervoltage

Positive going threshold

VCCUV+

VBSUV+

VCCUV-

VBSUV-

VCC and VBS supply undervoltage

Negative going threshold

VCCUVH

VBSUVH

VCC and VBS supply undervoltage

Ilockout hysteresis

10.9

0.2

10.4

---

11.4

---

IRAMS06UP60B

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Note 4: The Maximum recommended sense voltage at the ITRIP terminal under normal operating conditions is 3.3V.

Internal NTC - Thermistor Characteristics

Note 2: For more details, see IR21363 data sheet

Note 3: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to

DT97-3 for more details)

Typ Units Conditions

R25 Resistance 100 +/- 3% kΩTC = 25°C

R125 Resistance 2.522 ±10.9% kΩTC = 125°C

B B-constant (25-50°C) 4250 +/- 2% k R2 = R1e [B(1/T2 - 1/T1)]

-40 / 125 °C

1mW/°CT

C = 25°C

Parameter

Temperature Range

Typ. Dissipation constant

Dynamic Electrical Characteristics

VDD=VBS=VBIAS=15V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_th-

TA=25°C, unless otherwise specified

Internal Current Sensing Resistor - Shunt Characteristics

Thermistor Built-in IRAMS06UP60B

ITRIP (22)

VSS (23)

FLT (21)

Thermistor (13) Driver IC

NTC

Parameter Units

Resistance 50 ±1% m Ω

Tollerance ±1%

Max Power Dissipation 1. 5 W

Temperature Range -40 / 125 °C

Symbol Definition Min Typ Max Units

TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns

TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns

DTDead Time - 290 - ns

I/TTrip T/ITrip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns

TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms

IRAMS06UP60B

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Figure1. Input/Output Timing Diagram

Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output

voltage would be determined by the direction of current flow in the load.

U,V,W

Driver

V+

HIN1,2,3

LIN1,2,3

(15,16,17)

(18,19,20)

(8,5,2)

Itrip U,V,W

001V+

0100

011X

1XXX

HIN1,2,3 LIN1,2,3

HO1,2,3

LO1,2,3

Itrip

U,V,W

HIN1,2,3

LIN1,2,3

IRAMS06UP60B

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Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output

voltage would be determined by the direction of current flow in the load.

Figure 2. ITrip Timing Waveform

LIN1,2,3

HIN1,2,3

tfltclr

50%

U,V,W

IBUS_trip

6µs 1µs

IBUS

Sequence of events:

1-2) Current begins to rise

2) Current reaches IBUS_Trip level

2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low

over-current. In case of high current (short circuit), the actual delay will be smaller.

3-4) Delay between driver identification of over-current condition and disabling of all outputs

4) Current starts decreasing, eventually reaching 0

5) Current goes below IBUS_trip, the driver starts its auto-reset sequence

6) Driver is automatically reset and normal operation can resume (over-current condition must be removed

by the time the drivers automatically resets itself)

3 421 5 6

IRAMS06UP60B

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Module Pin-Out Description

Pin Name Description

1VB3 High Side Floating Supply Voltage 3

2W,VS3 Output 3 - High Side Floating Supply Offset Voltage

3NAnone

4VB2 High Side Floating Supply voltage 2

5V,VS2 Output 2 - High Side Floating Supply Offset Voltage

6NAnone

7VB1 High Side Floating Supply voltage 1

8U, VS1 Output 1 - High Side Floating Supply Offset Voltage

9NAnone

10 V+Positive Bus Input Voltage

11 NA none

12 V-Negative Bus Input Voltage

13 VTH Temperature Feedback

14 VCC +15V Main Supply

15 HIN1 Logic Input High Side Gate Driver - Phase 1

16 HIN2 Logic Input High Side Gate Driver - Phase 2

17 HIN3 Logic Input High Side Gate Driver - Phase 3

18 LIN1 Logic Input Low Side Gate Driver - Phase 1

19 LIN2 Logic Input Low Side Gate Driver - Phase 2

20 LIN3 Logic Input Low Side Gate Driver - Phase 3

21 FLT/Enable Fault Output and Enable Pin

22 ITRIP Current Sense and Itrip Pin

23 VSS Negative Main Supply

IRAMS06UP60B

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1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and

EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-

mance.

2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected be-

tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically

0.1µF, are strongly recommended.

3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on

IR design tip DN 98-2a, application note AN-1044 or Figure 9.

4. Current sense signal can be obtained from pin 22 and pin 23

5. After approx. 9 ms the FAULT is reset

6.PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition

must be cleared before resuming operation

Typical Application Connection IRAMS06UP60B

DC BUS

CAPACITORS

CONTROLLER

23 VS1

24 HO1

25 VB1

1 VCC

2 HIN1

3 HIN2

4 HIN3

5 LIN1

LIN2

LIN3

ITRIP

RCIN

VSS

COM

VB2

HO2

VS2

VB3

HO3

VS3

V- (12)

Driver IC

LO1 16

LO3 14

LO2 15

THERMISTOR

VSS (23)

VDD (14)

VTH (13)

ITRIP (22)

FAULT(21)

LIN2 (19)

LIN1 (18)

HIN3 (17)

HIN2 (16)

HIN1 (15)

W, VS3 (2)

VB3 (1)

V, VS2 (5)

VB2 (4)

U, VS1 (8)

VB1 (7)

V (10)+

LIN3 (20)

PWM in

Current Feedback

Temperature Monitor

15V

10m 0.1µ

FAULT indicator

Cb1

Cb2

Cb3

3-ph AC

MOTOR

IRAMS06UP60B

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Figure 3. Maximum sinusoidal phase current as function of switching frequency

V+ = 400V, Tj=150°C, Modulation Depth=0.8, PF=0.6

Figure 4. Maximum sinusoidal phase current as function of modulation frequency

V+=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 2 4 6 8 10 12 14 16 18 20

Switching frequency (kHz)

Maximum RMS Output Current/Phase (A) .

Tc= 100°C

Tc= 110°C

c= 120°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1 10 100

Modulation frequency (Hz)

Maximum RMS Output Current/Phase (A) .

12 kHz

16 kHz

20 kHz

IRAMS06UP60B

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Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, V+=400V

Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, V+=400V

-1

0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000

Time (µs)

Current (A)

-50

100

150

200

250

300

350

400

450

Voltage (V)

Current

Volta

-0.5

0.5

1.5

2.5

3.5

4.5

0.000 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000

Time (µs)

Current (A)

-50

100

150

200

250

300

350

400

450

Voltage (V)

Current

Volta

IRAMS06UP60B

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Figure 7. Variation of thermistor resistance with temperature

Figure 8. Estimated maximum IGBT junction temperature with thermistor tempera-

ture

100

1000

0 20 40 60 80 100 120 140

Temperature (°C)

Therimstor Resistance (k

Ω) .

Maximum

Nominal

Minimum

100

110

120

130

140

150

160

170

180

60 70 80 90 100 110 120

Thermistor temperature (°C)

IGBT Junction temperature (°C

)

bus=400V

Imot=3Arms

fsw=20kHz

IRAMS06UP60B

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Figure 9. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency

4.7

1.5 1

2.5

7.5

12.5

17.5

0 5 10 15 20

Frequency (kHz)

Capacitance (µF)

6.8

3.3

2.2

IRAMS06UP60B

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Figure 11. Switching Parameter Definitions

Figure 11a. Input to Output propagation

turn-on delay time

Figure 11b. Input to Output

propagation turn-off delay time

Figure 11c. Diode Reverse Recovery

VCE

HIN/LIN

trr

Irr

VCE IC

HIN/LIN

TON tr

50%

HIN/LIN

90% IC

10% IC

50%

HIN/LIN

VCE

HIN/LIN

TOFF tf

90% IC

10% IC

10%

VCE

IRAMS06UP60B

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Figure CT1. Switching Loss Circuit

Figure CT2. S.C.SOA Circuit

U,V,W

Driver

V+

LIN1,2,3

HIN1,2,3

PWM=4µs

U,V,W

Driver

V+

LIN1,2,3

HIN1,2,3

10k

5VZD

VCC

Figure CT3. R.B.SOA Circuit

U,V,W

Driver

V+

LIN1,2,3

HIN1,2,3

10k

5VZD

VCC

VP=Peak Voltage on the IGBT die

IRAMS06UP60B

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Standard pin leadforming option

Notes:

Dimensions in mm

1- Marking for pin 1 identification

2- Product Part Number

3- Lot and Date code marking

For mounting instruction, see AN1049

Package Outline

027-E2D24

IRAMS06UP60B

note 1

note 2

note 3

IRAMS06UP60B

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information

8/04

Package Outline

Pin leadforming option -2

Notes:

Dimensions in mm

1- Marking for pin 1 identification

2- Product Part Number

3- Lot and Date code marking

Data and Specifications are subject to change without notice

027-E2D24

note 1

IRAMS06UP60B-2

note 2

note 3