MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE FS10VS-5 OUTLINE DRAWING Dimensions in mm @ 10.5MAX. 45 \ 2 7 as \ | { x a Qe ee oi a se x]o}o: 40.3 s\a2 , a) |e | ye + \ a SBP si i GATE 2 DRAIN 4; SOURCE 4 DRAIN @VDSS cet c cnet cette nee teen enter sete tneeenntes 250V @rDs (ON) (MAX) strives terre eect ete e erence eens 0.529 3 DID ccc rer eneeeeeces eee eee tee nena aerate 10A TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Vbss Drain-source Vass Gate-source Ib Drain current 10. lpm Drain current 30 Po Maximum 90 Teh Channel ~55 ~ +150 T. ~55 ~ +150 1.2 2 - 30 ate MITSUBISHI ELECTRIC MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Teh = 25C) Limits mbol Parame Test conditions it Symbol ter Min. Typ. Max Uni V (BR) Dss | Drain-source breakdown voltage | Ip = 1mA, VGS = OV 250 _ _ Vv VR) Gss | Gate-source breakdown voltage | IG = 100uA, Vos = OV +30 _ Vv Iass Gate leakage current VGS = +25V, Vos = 0V _ _ +10 pA IDss Drain current Vos = 250V, Vas = 0V _ 1 mA VGS (th) Gate-source threshold voltage ip = ImA, Vos = 10V 2 3 4 Vv FDS {ON} | Drain-source on-state resistance | 1D = 5A, Vas = 10V _ 0.40 0.52 Q Ves (ON) | Drain-source on-state voltage | Ib = 5A, Vas = 10V _ 2.0 2.6 v lyts! Forward transfer admittance | 1p = 5A, Vps = 10V 40 6.0 Ss Ciss input capacitance _ 570 _ pF Coss Output capacitance VbS = 25V, VGS = OV, f = IMHz 110 _ pF Crss Reverse transfer capacitance _ 20 pF td (on) Turn-on delay time _ 17 _ ns ise ti _ tr Rise time _ Vpp = 150V, iD = 5A, Vas = 10V, RGEN = Res = 500 28 as td (off) Turn-off delay time _ 60 _ ns tt Fail time ~_ 30 _ ns Vso Source-drain voRage Is = 5A, Vas = OV 15 2.0 v Rth(ch-e) | Thermal resistance Channei to case _ 1.39 C PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 5 _ 3 = 2 a 80 Zz ao a 3 10 g 5 3 = 60 Z 3 < iva o oc , B 40 3 1 : z 8 i = 3 = 20 Oo 2 C = 26C Oo Pulse o 10-1 p %5 50 100 150 200 10 23 5710! 23 5710? 23 57103 (ASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) VGS = 20V VGS = 20V 10 20 10V CL aeeC 10V T7552 gow Pulse Test 6V = 6 < = 2 2 & KE i ge & [aa oc x x 35 > 3 8 35 Zz z < <z xr 5 4 5 0 Q 7 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN-SOURCE VOLTAGE Vos (V) aie MisyesH 2-31 : ELECTRIC MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE DRAIN-SOURCE ON-STATE VOLTAGE Vbs (ON) (V) DRAIN CURRENT Ip (A) CAPACITANCE Ciss, Coss, Crss (pF) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ht Tc = 25C Pulse T we wl rh << OG 22 Oo Qn us 2 O 3 2 Oe 22 < n oc 5A Q 4 8 12 16 20 GATE-SQURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Vos = 50V Tc = 25C Pulse Test om wi 2 a) 2> f ES Og aE a3 22 9 4 8 12 16 20 GATE-SQURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 108 2 7 8 s 3 - ? g 102 5 Z 8 B 3p Toh = 25C 2h f= TMHz 1 23 5710023 5710123 5710223 Crss 10 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) = Qo Te = 28C Ti a co VGS = 10V o a 20V S zp 0.2 0 107 23 8710023 5710' 23 57102 DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 To = 25C No oT 190 Nw OT st Vos = 10V Pulse Test 23 5 7 102 1 O08 23 57108 DRAIN CURRENT ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 103 Teh = 25C Vod = 150V VGS = 10V = Ras = 50Q Nm Ww oI 101 tr 107 23 57100 23 5710! DRAIN CURRENT Ip {A} 2 - 32 ate MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (On) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (8p) Dss (tC) GATE-SOURCE VOLTAGE VGs (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (aR) OSs (25C) 20 16 12 19! 7 108 Nw ot 0.4 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 26C Ip= 1DA VDS = 1 0 8 16 24 32 40 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 10V iD = */210 Pulse Test ~50 0 50 10G, 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VG6s =.0V iD = ImA ~50 0 50 160 150 CHANNEL TEMPERATURE. Teh (C) TRANSIENT THERMAL IMPEDANCE = 2th (ch-c) (C/W) 70! = Nw aS how = Q mow os 2 o 10423 5710223 5710223 5710-123 8710023 5710'23 57102 SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGs (th) (V) MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Vas = 0V Pulse Test 32 24 16 8 0 0 0.8 4.6 2.4 3.2 40 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 V0S = 10V iD= ImA 40 3.0 2.0 1.0 50 9 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Pulse PULSE WIDTH tw (s) ae MITSUBISHI ELECTRIC 2 ~ 33