FQI27N25TUF085 - FAIRCHILD SEMICONDUCTOR

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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

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KSB772

PNP Epitaxial Si licon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics TC=25°C unless otherwise noted

* Pulse T est: PW≤350µs, Duty Cycle≤2%

hFE Classificntion

Symbol Parameter Value Units

VCBO Collector-Base Voltage - 40 V

VCEO Collector-Emitter Voltage - 30 V

VEBO Emitter-Base Voltage - 5 V

ICCollector Current (DC) - 3 A

ICP *Collector Current (Pulse) - 7 A

IBBase Current (DC) - 0.6 A

PCCollector Dissipation ( TC=25°C) 10 W

Collector Dissipation ( Ta=25°C) 1W

Rθja Junction to Ambient 132 °C/W

Rθjc Junction to Case 13.5 °C/W

TJJunction Temperature 150 °C

TSTG Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Co ndition Min. Typ . Max. Units

ICBO Collector Cut-of f Current VCB = - 30V, IE = 0 - 1 µA

IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 - 1 µA

hFE1

hFE2

* DC Current Gain VCE = - 2V, IC = - 20mA

VCE = - 2V, IC = - 1A 30

60 220

160 400

VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.5 V

VBE(sat) * Base-Emitter Satur ation Volt age IC = - 2A, IB = - 0.2A - 1.0 - 2.0 V

fT Current Gain Bandwidth Product VCE = - 5V, IE = - 0.1A 80 MHz

Cob Output Capacitance VCB = - 10V, IE = 0

f = 1MH z 55 pF

Classification R O Y G

hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400

KSB772

Audio Frequency Power Amplifier

• Low Speed Switching

• Complement to KSD882

1TO-126

1. Emitter 2.Collector 3.Base

KSB772

Rev. B, October 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Vo ltage

Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area

0 -4 -8 -12 -16 -20

-0.4

-0.8

-1.2

-1.6

-2.0

IB = -2mA

IB = -10mA

IB = -5mA

IB = -3mA

IB = -8mA

IB = -9mA

IB = -6mA

IB = -1mA

IB = -7mA

IB = -4mA

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -1000 -10000

100

1000 VCE = -2V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000 -10000

-1

-10

-100

-1000

-10000

VCE(sat)

VBE(sat)

IC = 10·IB

VCE(sat),VBE(sat)[mV] SATURATIO N VOLTAGE

IC[mA], COLLECTOR CURRENT

-1 -10 -100

100

1000 IE = 0

f=1MHz

Cob[pF], CA PA CIT AN C E

VCB[V], COLLECTOR-BASE VOLTAGE

-0.01 -0.1 -1

100

1000 VCE=5V

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

IC[A], COLLECTOR CURRENT

-1 -10 -100

-0.01

-0.1

-1

-10

IC MAX(D C )

IC MAX(Pulse)

10ms

1ms

100us

VCEOMAX

s/b Limited

Dissipation

Limited

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

KSB772

Rev. B, October 2002

Typical Characteristics (Continued)

Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating

25 50 75 100 125 150 175 200

100

120

140

160

Dissipation Limited

s/b Limited

dT[%], Ic DERATING

TC[oC], CASE TEMPERATURE

25 50 75 100 125 150 175 200

PC[W], POWE R DISSI PATIO N

TC[oC], CASE TEMPERATURE

2.29

1.35

1.70

1.50

0.85

0.65

14.20 MAX

3.20

8.30

7.70

4.00

3.80

3°

0.60

0.45

1.00

1.95

1.55

3.45

3.05

11.20

10.80

TOP VIEW

FRONT VIEW

SIDE VIEW

NOTES:

A. NO INDUSTRY STANDARD APPLIES TO THIS

PACKAGE

B. ALL DIMENSIONS ARE IN MILLIMETERS

C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD

FLASH, AND TIE BAR PROTRUSIONS

FOR TERMINAL LENGTH "D", REFER TO TABLE

FOR TERMINAL LENGTH "E", REFER TO TABLE

F. DRAWING FILENAME: MKT-TO126AArev2

0.254

PRODUCTION

CODE

TERMINAL

LENGTH "D"

TERMINAL

LENGTH "E"

TSSTU

3.45 - 4.05

6.45-7.45

TSTU

2.36 - 2.96

5.36-6.36

NONE

(STD LENGTH)

12.76 - 13.36

15.76-16.76

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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