®
TMMBAT 47
TMMBAT 48
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protect ion against
excessive voltage such as electrostatic discharges.
August 1999 Ed: 1A
MINIMELF
(Glass)
Symbol Parameter TMMBAT47 TMMBAT48 Unit
VRRM Repetitive Peak Reverse Voltage 20 40 V
IFForward Con tinuous Current Tl = 25 °C350 mA
IFRM Repetitive Peak Fordward Current tp ≤ 1s
δ ≤ 0.5 1A
I
FSM Surge non Repetitive Forward Current tp = 10ms 7.5 A
tp = 1s 1.5
Ptot Power Dissipation Tl = 25 °C330 mW
Tstg
TjStorage and Junction Temperature Range - 65 to 150
- 65 to 125 °C
°C
TLMaximum Temperature for Soldering during 15s 260 °C
ABSOLUTE RATINGS (limiting values )
Symbol Test Conditions Value Unit
Rth(j-l) Junction-leads 300 °C/W
THERMAL RESISTANCE
1/5
* Pulse test: tp ≤ 300µs δ < 2%.
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj = 25°CI
R
= 10µATMMBAT47 20 V
Tj = 25°CI
R
= 25µATMMBAT48 40
VF*Tj = 25°CIF = 0.1mA All Types 0.25 V
Tj = 25°CIF = 1mA 0.3
Tj = 25°CIF = 10mA 0.4
Tj = 25°CIF = 30mA TMMBAT47 0.5
Tj = 25°CIF = 150mA 0.8
Tj = 25°CIF = 300mA 1
Tj = 25°CIF = 50mA TMMBAT48 0.5
Tj = 25°CIF = 200mA 0.75
Tj = 25°CIF = 500mA 0.9
IR*Tj = 25°CVR = 1.5V All Types 1 µA
Tj = 60°C10
Tj = 25°CVR = 10V TMMBAT47 4
Tj = 60°C20
Tj = 25°CVR = 20V 10
Tj = 60°C30
Tj = 25°CVR = 10V TMMBAT48 2
Tj = 60°C15
Tj = 25°CVR = 20V 5
Tj = 60°C25
Tj = 25°CVR = 40V 25
Tj = 60°C50
STATIC CHARACTERISTICS
ELECTRI CAL CHARACTERISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
CTj = 25°CV
R
= 0V f = 1MHz 20 pF
Tj = 25°CV
R
= 1V 12
trr Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100Ω10 ns
DYNAMIC CHARACTERISTICS
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TMMBAT 47/TMMBAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature. Figure 4. Rever se current versus continuous
reverse voltage (typi cal values).
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TMMBAT 47/TMMBAT 48
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Figure 5. Capacitance C versus reverse
applied voltage VR (typical values).
TMMBAT 47/TMMBAT 48
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Marki ng: ring at cathode end.
Weight: 0.05g
PACKAGE M ECH ANICAL DATA
FOOT PRINT DIMENSIONS (Millimeter)
MINIMELF G lass
B
A
C
C
O
/
2.5
5
2
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.30 3.40 3.6 0.130 0.134 0.142
B 1.59 1.60 1.62 0.063 0.063 0.064
C 0.40 0.45 0.50 0.016 0.018 0.020
D 1.50 0.059
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of use of such informati on nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent ri ghts of STMicroel ectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroel ect roni cs. The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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TMMBAT 47/TMMBAT 48
