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1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•Typical CDMA Performance @ 1930 MHz, 26 Volts, IDQ = 550 mA
Multi-carrier IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: -50 dBc @ 30 kHz BW
IM3 — -37 dBc
•Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW
Output Power
Features
•Internally Matched for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD105
0.60
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 1.65 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF19045
Rev. 9, 10/2008
Freescale Semiconductor
Technical Data
MRF19045LR3
MRF19045LSR3
1930 -1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E- 04, STYLE 1
NI-400
MRF19045LR3
CASE 465F- 04, STYLE 1
NI-400S
MRF19045LSR3
Freescale Semiconductor, Inc., 2008. All rights reserved.
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RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th) 2 — 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
VGS(Q) 3 3.8 5 Vdc
Drain- Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) — 0.19 0.21 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 4.2 — S
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 1.8 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 -carrier N -CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N- CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
Gps 13 14.5 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N- CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
η21 23.5 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N- CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz; IM3 Measured in
a 1.2288 MHz Integrated Bandwidth Centered at f1 -2.5 MHz and
f2 +2.5 MHz, Referenced to the Carrier Channel Power)
IM3 — -37 -35 dBc
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz; ACPR measured in a 30 kHz
Integrated Bandwith Centered at f1 -885 kHz and f2 +885 kHz)
ACPR — -51 -45 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N- CDMA,
IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
IRL — -16 -9 dB
Pout, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 550 mA, f = 1930 MHz)
P1dB — 45 — W
1. Part is internally matched both on input and output.
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RF Device Data
Freescale Semiconductor
Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic
RF
OUTPUT
Z3
Z4
C6
C1 R1C3
+
C7
C5
C8
C2
Z6
Z7
VSUPPLY
C12
C10
Z11
C9
Z8
C11
+
Z8 0.216″ x 0.047″ Microstrip
Z9 0.519″ x 0.254″ Microstrip
Z10 0.874″ x 0.081″ Microstrip
Z11 0.645″ x 0.081″ Microstrip
PCB Arlon GX0300-55-22, 30 mils,
εr = 2.55
Z1 1.336″ x 0.081″ Microstrip
Z2 0.693″ x 0.081″ Microstrip
Z3 1.033″ x 0.047″ Microstrip
Z4 0.468″ x 0.047″ Microstrip
Z5 0.271″ x 0.460″ Microstrip
Z6 0.263″ x 0.930″ Microstrip
Z7 1.165″ x 0.047″ Microstrip
NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″.
Zx lengths are microstrip lengths between components, center-line to center-line.
All component and z-length tolerances are ±0.015″, except as noted.
++
VBIAS
RF
INPUT Z1 Z2 Z5
W2
R4
+
Z9 Z10
C13
B2
R5
B2W1
R3
B1
R2
C4
Table 5. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values
Designators Description
B1, B2 0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446
C1, C2 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394
C3, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C4, C8 24 pF Chip Capacitors, ATC #100B240JP500X
C5 470 pF Chip Capacitor, ATC #100B471JP200X
C6, C7 11 pF Chip Capacitors, ATC #100B110JP500X
C9, C10, C12 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
C13 8.2 pF Chip Capacitor, ATC #100B8R2CP500X
R1 560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″)
R2, R3, R4, R5 8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT
W1, W2 Solid Copper Buss Wire, 16 AWG
WS1, WS2 Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal
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Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout
C1
C13
C12
W1
WS1
W2B1
R1
R2 R3 R4 R5
B2
C2 C3
C4
C5
C6
C7 C8
C9 C10
MRF19045/S
Rev-0
C11
WS2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
5
10
15
20
25
30
35
1900 1930 1960 1990 2020
−60
−50
−40
−30
−20
−10
0
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
and Drain Efficiency versus Output Power
Figure 5. 2-Carrier N-CDMA IM3
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
Figure 6. 2-Carrier N-CDMA ACPR
versus Output Power
13.5
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Gps , POWER GAIN (dB) IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
35
40
123456789101112
−70
−65
−60
−55
−50
−45
−40
−35
−30
η
Gps
ACPR
IM3
η
Gps
ACPR
IM3
IRL
f, FREQUENCY (MHz)
IM3 (dBc), ACPR (dBc), IRL (dB)
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
−55
−50
−45
−40
−35
−30
01 9101112
350 mA
450 mA
700 mA
550 mA
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
234 5678
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
01 9101112234 5678
−70
−55
−65
−60
−50
−45
Figure 7. 2-Carrier N-CDMA Power Gain
versus Output Power
Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
350 mA
450 mA
700 mA
550 mA
01 9101112234 5678
350 mA
450 mA
700 mA
550 mA
14.0
14.5
15.0
15.5
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
1.2288 MHz Source Channel Bandwidth
VDD = 26 Vdc
IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
VDD = 26 Vdc, IDQ = 550 mA
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
Figure 8. CW Output Power, Power Gain and Drain
Efficiency versus Input Power
0
10
20
30
40
50
60
70
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
10
11
12
13
14
15
16
17
Gps
η
Pout
P1dB
P3dB
Pin, INPUT POWER (WATTS CW)
, DRAIN EFFICIENCY (%),ηP , OUTPUT POWER (WATTS CW)
out
Gps , POWER GAIN (dB)
VDD = 26 Vdc
IDQ = 550 mA
f = 1960 MHz
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RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
TYPICAL CHARACTERISTICS
Figure 9. CW Two-Tone Power Gain, IMD and
Drain Efficiency versus Output Power
Figure 10. CW Two-Tone Power Gain, Input Return Loss,
IMD and Drain Efficiency versus Frequency
Figure 11. CW Two-Tone Intermodulation Distortion
versus Output Power
f, FREQUENCY (MHz)
Figure 12. CW Two-Tone Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS PEP)
Figure 13. CW Two-Tone Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS PEP)
Gps , POWER GAIN (dB)
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
0
5
10
15
20
25
30
35
40
0.1 1.0 10 100
−65
−60
−55
−50
−45
−40
−35
−30
−25
5
10
15
20
25
30
35
40
1900 1930 1960 1990 2020
−35
−30
−25
−20
−15
−10
−5
0
Gps
η
IRL
IMD
−70
−65
−60
−55
−50
−45
−40
−35
−30
−25
0.1 1.0 10 100
13.0
13.5
14.0
14.5
15.0
15.5
16.0
0.1 1.0 10 100
−90
−80
−70
−60
−50
−40
−30
−20
0.1 1.0 10 100
Pout, OUTPUT POWER (WATTS PEP)
Pout, OUTPUT POWER (WATTS PEP)
, DRAIN EFFICIENCY (%),ηGps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc), IRL (dB)
IMD, INTERMODULATION DISTORTION (dBc)
Gps
η
IMD
350 mA
450 mA
700 mA
550 mA
VDD = 26 Vdc
IDQ = 450 mA
100 kHz Tone Spacing
350 mA
450 mA
700 mA
550 mA
3rd Order
5th Order
7th Order
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
VDD = 26 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
VDD = 26 Vdc
IDQ = 450 mA
f1 = 1960 MHz, f2 = 1960.1 MHz
VDD = 26 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
f, FREQUENCY (MHz)
−100
0
Figure 14. 2-Carrier N- CDMA Spectrum
−10
−20
−30
−40
−50
−60
−70
−80
−90
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−IM3 in
1.2288 MHz
Integrated BW
+IM3 in
1.2288 MHz
Integrated BW
1.2288 MHz
Channel BW
61.5 4.530−1.5−3−4.5−6−7.5 7.5
(dB)
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MRF19045LR3 MRF19045LSR3
7
RF Device Data
Freescale Semiconductor
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
15.52 - j16.5
11.11 - j13.01
14.24 - j14.44
4.52 - j1.86
3.85 - j1.04
3.44 - j0.69
VDD = 26 V, IDQ = 550 mA, Pout = 9.5 W Avg.
Zo = 25 Ω
f = 1930 MHz
f = 1930 MHz
f = 1990 MHz
f = 1990 MHz
Zsource
Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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RF Device Data
Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
PACKAGE DIMENSIONS
MRF19045LR3
CASE 465E- 04
ISSUE F
NI-400
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb A M
T
H
B
B
G
A
M
A
M
ccc B M
T
M
A
M
bbb B M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
M
A
M
aaa B M
T
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.44
INCHES
B.380 .390 9.65 9.9
C.125 .163 3.17 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
G
H.057 .067 1.45 1.7
K.092 .122 2.33 3.1
M.395 .405 10 10.3
N.395 .405 10 10.3
Q.120 .130 3.05 3.3
R.395 .405 10 10.3
S.395 .405 10 10.3
aaa
bbb
ccc
.600 BSC 15.24 BSC
.005 BSC 0.127 BSC
.010 BSC 0.254 BSC
.015 BSC 0.381 BSC
SEE NOTE 4
CASE 465F-04
ISSUE E
NI-400S
MRF19045LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M− 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
EF
2X K
M
A
M
bbb B M
T
AT
C
H
B
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.395 .405 10.03 10.29
INCHES
B.395 .405 10.03 10.29
C.125 .163 3.18 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
H.057 .067 1.45 1.70
K.092 .122 2.34 3.10
M.395 .405 10.03 10.29
S.395 .405 10.03 10.29
aaa .005 REF 0.127 REF
2X D
M
A
M
ccc B M
T
bbb .010 REF 0.254 REF
ccc .015 REF 0.38 REF
N.395 .405 10.03 10.29
R.395 .405 10.03 10.29
M
A
M
ccc B M
T
M
A
M
aaa B M
T
N(LID)
M(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R(LID)
S(INSULATOR)
M
A
M
aaa B M
T
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MRF19045LR3 MRF19045LSR3
9
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
9Oct. 2008 •Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
•Data sheet archived. Part no longer manufactured.
•Added Product Documentation and Revision History, p. 9
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Freescale Semiconductor
MRF19045LR3 MRF19045LSR3
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Document Number: MRF19045
Rev. 9, 10/2008
