V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
Document Number: 89068
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 V at IF = 3 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 5.0 A
VRRM 150 V
IFSM 60 A
VF at IF = 5 A 0.69 V
TJ max. 150 °C
TO-220AB
V10150C 1
23
PIN 1 PIN 2
CASE
PIN 3
PIN 1 PIN 2
PIN 3
TMBS ®
VI10150C
TO-262AA
PIN 1 PIN 2
PIN 3 K
VB10150C
PIN 1
PIN 2
K
HEATSINK
1
2
K
TO-263AB
1
K
23
VF10150C
ITO-220AB
123
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V10150C VF10150C VB10150C VI10150C UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum average forward rectified current (fig. 1) per device
per diode IF(AV)
10
5.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 60 A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode EAS 23 mJ
Peak repetitive reverse current at tp = 2 µs, 1 kHz,
TJ = 38 °C ± 2 °C per diode IRRM 0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min VAC 1500 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89068
Revision: 24-Jun-09
2
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 150 (minimum) - V
Instantaneous forward voltage per diode (1)
IF = 3 A
IF = 5 A TA = 25 °C
VF
0.82
0.99
-
1.41 V
IF = 3 A
IF = 5 A TA = 125 °C 0.63
0.69
-
0.75
Reverse current per diode (2)
VR = 100 V TA = 25 °C
TA = 125 °C IR
0.5
0.5
-
-
µA
mA
VR = 150 V TA = 25 °C
TA = 125 °C
-
1.0
100
10
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V10150C VF10150C VB10150C VI10150C UNIT
Typical thermal resistance per diode RθJC 4.0 6.5 4.0 4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V10150C-E3/4W 1.87 4W 50/tube Tube
ITO-220AB VF10150C-E3/4W 1.74 4W 50/tube Tube
TO-263AB VB10150C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB10150C-E3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI10150C-E3/4W 1.45 4W 50/tube Tube
Figure 1. Maximum Forward Current Derating Curve
Case Temperature (°C)
Average Forward Rectified Current (A)
12
10
0
0 25 50 75 100 125 150 175
VF10150C
V(B,I)10150C
Resistive or Inductive Load
Mounted on Specific Heatsink
8
4
2
6
Figure 2. Forward Power Loss Characteristics Per Diode
0
1
3
5
01 4 6
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
3
2
4
52
D = t
p
/T t
p
T
New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
Document Number: 89068
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.81.2 1.6
100
10
1
0.1
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
1.4
10 20 30 40 50 60 70 80 90 100
0.1
0.01
0.001
10
1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.00001
0.0001
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)10150C
Junction to Case
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF10150C
Junction to Case
1
New Product
V10150C, VF10150C, VB10150C & VI10150C
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89068
Revision: 24-Jun-09
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
TO-262AA
HEATSINK
PIN 2
PIN 1
PIN 3
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
K
123
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
12
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0 to 0.01 (0 to 0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41) 0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
MIN.
MIN.
MIN.
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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