© Semiconductor Components Industries, LLC, 2018
September, 2018 − Rev. 0 1Publication Order Number:
5HN01SS/D
5HN01SS
MOSFET, Silicon, N-Channel
Ultrahigh−Speed Switching Applications
Features
•Low ON−resistance
•Ultrahigh−speed Switching
•4 V Drive
•These Devices are Pb−Free and are RoHS Compliant
Figure 1. Switching Time Test Circuit
PW = 10 ms
D.C. ≤ 1%
VIN
P.G 50 W
G
D
VDD= 25 V
VOUT
5HN01SS
S
VIN RL = 500 W
ID = 50 mA
10 V
0 V
NOTE: Since the 5HN01SS is designed for high−speed
switching applications, please avoid using this
device in the vicinity of highly charged objects.
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MARKING DIAGRAM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
YC = Specific Device Code
SOT−623 / SSFP
CASE 631AC
12
3
YC
LOT No.
LOT No.
12
3
1 : Gate
2 : Source
3 : Drain
5HN01SS
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2
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Drain−to−Source Voltage VDSS 50 V
Gate−to−Source Voltage VGSS ±20 V
Drain Current (DC) ID0.1 A
Drain Current (Pulse) IDP PW ≤ 10 ms, duty cycle ≤ 1% 0.4 A
Allowable Power Dissipation PD0.15 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter Symbol Conditions
Ratings
Unit
Min Typ Max
Drain−to−Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 50 V
Zero−Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 1mA
Gate−to−Sourse Leakage Current IGSS VGS = ±16 V, VDS = 0 ±10 mA
Cutoff Voltage VGS(off) VDS = 10 V, ID = −100 mA1 2.4 V
Forward Transfer Admittance ⎟yfs⎟VDS = 10 V, ID = 50 mA 85 120 mS
Static Drain−to−Source On−State
Resistance
RDS(on)1 ID = 50 mA, VGS = 10 V 5.8 7.5 W
RDS(on)2 ID = 30 mA, VGS = 4 V 7.5 10.5 W
Input Capacitance Ciss VDS = 10 V, f = 1 MHz 6.2 pF
Output Capacitance Coss VDS = 10 V, f = 1 MHz 4.4 pF
Reverse Transfer Capacitance Crss VDS = 10 V, f = 1 MHz 1.5 pF
T urn−ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time trSee specified Test Circuit 11 ns
T urn−OFF Delay Time td(off) See specified Test Circuit 105 ns
Fall Time tfSee specified Test Circuit 75 ns
Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 100 mA 1.40 nC
Gate Source Charge Qgs VDS = 10 V, VGS = 10 V, ID = 100 mA 0.21 nC
Gate Drain Charge Qgd VDS = 10 V, VGS = 10 V, ID = 100 mA 0.34 nC
Diode Forward Voltage VSD IS = 100 mA, VGS = 0 0.85 1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5HN01SS
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3
TYPICAL CHARACTERISTICS
Figure 2. Figure 3.
Figure 4. Figure 5.
Figure 6. Figure 7.
I −− V
Drain−to−Source Voltage, VDS − V
DDS
Drain Current, ID − A
I
D
−− V
GS
Drain Current, ID − A
Gate−to−Source Voltage, VGS − V
RDS(on) −− VGS
Gate−to−Source Voltage, VGS − V
Static Drain−to−Source,
On−State Resistance, RDS(on) − W
RDS(on) −− ID
Static Drain−to−Source,
On−State Resistance, RDS(on) − W
Drain Current, ID − A
RDS(on) −− ID
Static Drain−to−Source,
On−State Resistance, RDS(on) − W
Drain Current, ID − A −60
RDS(on) −− Ta
Static Drain−to−Source,
On−State Resistance, RDS(on) − W
Ambient Temperature, Ta − °C
−40 −20 0 20 40 60 80 100 120 140 160
0
0
0.02
0.04
0.06
0.08
0.10
0.2 0.4 0.6 0.8 1.0
2.5V
3.0V
4.0V
8.0V
10.0V
6.0V
IT00042
VGS = 2.0 V
0
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
IT00043
12345
VDS = 10 V
Ta = 25°C
25°C
75°C
01234
45
5
6
6
7
8
9
10
11
12
78910
IT00044
Ta = 25°C
ID = 30 mA
50 mA
IT00045
0.01
1.0 0.1
2
10
7
5
3
2
100
7
5
3
2
Ta = 75°C
25°C
−25°C
VGS = 10 V
357 23
IT00046
0.01
1.0 0.1
23 57 23
10
7
5
3
2
100
7
5
3
2
Ta = 75°C25°C
−25°C
VGS = 4 V
0
2
4
6
8
10
12
14
IT00047
ID = 30 mA, VGS = 4 V
ID = 50 mA, VGS = 10 V
5HN01SS
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4
TYPICAL CHARACTERISTICS
Figure 8. Figure 9.
Figure 10. Figure 11.
Figure 12. Figure 13.
⏐yfs⏐ −− I
D
Forward Transfer Admittance |yfs| − s
Drain Current, ID − A
I
F
−− V
SD
Diode Forward Voltage, VSD − V
Forward Current, IF − A
SW Time −− ID
Switching Time, SW Time − ns
Drain Current, ID − A
Ciss, Coss, Crss −− VDS
Ciss, Coss, Crss − pF
Drain−to−Source Voltage, VDS − V
VGS −− Qg
Total Gate Charge, Qg − nC
Gate−to−Source Voltage, VGS − V
0
0
0.05
20 40 60 80
0.10
0.15
100
0.20
120 140 160
PD −− Ta
IT02381
Ambient Temperature, Ta − °C
Allowable Power Dissipation, PD − W
0.01
0.01 0.1
23 57 23
0.1
1.0
7
5
3
2
7
5
3
2
IT00048
VDS = 10 V
25°C
Ta = −25°C
75°C
IT00049
0.01 0.6 0.8 1.0 1.21.10.90.70.50.4
0.1
3
2
7
5
3
2
VGS = 0
−25°C
25°C
Ta = 75°C
0.01
1.0
10
0.1
23 57
1000
100
7
5
3
2
7
5
3
2
7
5
3
2
IT00050
VDD = 25 V
VGS = 10 V
td(off)
tf
tr
td(on)
0
0.1
1.0
5
10
7
5
3
2
7
5
3
2
7
5
3
2
10 15
100
20
Ciss
Coss
Crss
f=1MHz
IT00051
25 30 35 40 45 50
0
0
1
2
0.3
3
4
5
6
7
0.6
8
9
0.9
10
1.2 1.5
IT00052
VDS = 10 V
ID = 0.1 A
5HN01SS
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6
ORDERING INFORMATION
Device Marking Package Shipping†
5HN01SS−TL−E / 5HN01SS−TL−H YC SOT−623 / SSFP
(Pb−Free / Halogen Free) 8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
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5HN01SS/D
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