5HN01SS MOSFET, Silicon, N-Channel Ultrahigh-Speed Switching Applications Features * * * * Low ON-resistance Ultrahigh-speed Switching 4 V Drive These Devices are Pb-Free and are RoHS Compliant www.onsemi.com 3 1 10 V 0V PW = 10 ms D.C. 1% SOT-623 / SSFP CASE 631AC VDD= 25 V VIN ID = 50 mA RL = 500 W VIN D 3 VOUT 1 : Gate 2 : Source 3 : Drain G 1 5HN01SS P.G 50 W 2 2 S MARKING DIAGRAM NOTE: Since the 5HN01SS is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. YC YC LOT No. LOT No. Figure 1. Switching Time Test Circuit = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 September, 2018 - Rev. 0 1 Publication Order Number: 5HN01SS/D 5HN01SS SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS 20 V 0.1 A 0.4 A 0.15 W Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD PW 10 ms, duty cycle 1% Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS at Ta = 25C Ratings Parameter Drain-to-Source Breakdown Voltage Symbol Conditions Min Typ Max ID = 1 mA, VGS = 0 Zero-Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 1 mA Gate-to-Sourse Leakage Current IGSS VGS = 16 V, VDS = 0 10 mA 2.4 V Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance VGS(off) yfs 50 Unit V(BR)DSS VDS = 10 V, ID = -100 mA 1 VDS = 10 V, ID = 50 mA 85 V 120 mS RDS(on)1 ID = 50 mA, VGS = 10 V 5.8 7.5 W RDS(on)2 ID = 30 mA, VGS = 4 V 7.5 10.5 W Input Capacitance Ciss VDS = 10 V, f = 1 MHz 6.2 pF Output Capacitance Coss VDS = 10 V, f = 1 MHz 4.4 pF Reverse Transfer Capacitance Crss VDS = 10 V, f = 1 MHz 1.5 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time Turn-OFF Delay Time Fall Time tr See specified Test Circuit 11 ns td(off) See specified Test Circuit 105 ns tf See specified Test Circuit 75 ns Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 100 mA 1.40 nC Gate Source Charge Qgs VDS = 10 V, VGS = 10 V, ID = 100 mA 0.21 nC Gate Drain Charge Qgd VDS = 10 V, VGS = 10 V, ID = 100 mA 0.34 nC Diode Forward Voltage VSD IS = 100 mA, VGS = 0 0.85 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 5HN01SS TYPICAL CHARACTERISTICS ID -- V DS 8.0V 3.0V 0.16 Drain Current, ID - A Drain Current, ID - A VDS = 10 V 0.18 6.0V4.0V 0.08 ID -- VGS 0.20 10.0V 0.06 0.04 Ta = 25C 0.10 2.5V 0.14 0.10 0.08 0.06 0.02 VGS = 2.0 V 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS - V IT00042 0 1 2 Static Drain-to-Source, On-State Resistance, RDS(on) - W 11 10 9 50 mA 8 ID = 30 mA 7 6 5 4 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS - V 9 VGS = 10 V 7 5 3 2 10 Ta = 75C 25C -25C 7 5 3 2 1.0 0.01 10 2 3 Static Drain-to-Source, On-State Resistance, RDS(on) - W 5 3 2 25C Ta = 75C 7 -25C 3 2 1.0 0.01 2 3 5 2 0.1 3 IT00045 7 0.1 Drain Current, ID - A 2 RDS(on) -- Ta 14 VGS = 4 V 7 5 7 Figure 5. RDS(on) -- I D 10 5 Drain Current, ID - A IT00044 Figure 4. 100 5 IT00043 RDS(on) -- I D 100 Ta = 25C 0 4 Figure 3. RDS(on) -- V GS 12 3 Gate-to-Source Voltage, VGS - V Figure 2. Static Drain-to-Source, On-State Resistance, RDS(on) - W 75C 0.12 0.04 0.02 Static Drain-to-Source, On-State Resistance, RDS(on) - W 25C 12 8 ID = 50 mA, VGS = 10 V 6 4 2 0 -60 3 ID = 30 mA, VGS = 4 V 10 -40 -20 0 20 40 60 80 100 120 Ambient Temperature, Ta - C IT00046 Figure 7. Figure 6. www.onsemi.com 3 140 160 IT00047 5HN01SS TYPICAL CHARACTERISTICS yfs -- I D 7 IF -- V SD 3 VDS = 10 V VGS = 0 2 5 75C 7 5 3 7 5 3 2 2 0.01 0.01 2 3 5 7 2 0.1 0.01 0.4 3 0.5 0.6 0.7 Figure 8. Ciss, Coss, Crss - pF Switching Time, SW Time - ns td(off) 100 7 5 tf 3 2 tr 10 7 5 td(on) 1.1 1.2 IT00049 f=1MHz 3 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 2 3 2 1.0 0.01 0.1 2 3 5 7 Drain Current, ID - A 0 0.1 IT00050 5 10 15 25 30 35 40 45 50 IT00051 Figure 11. VGS -- Qg 10 20 Drain-to-Source Voltage, VDS - V Figure 10. PD -- Ta 0.20 VDS = 10 V ID = 0.1 A Allowable Power Dissipation, PD - W Gate-to-Source Voltage, VGS - V 1.0 Ciss, Coss, Crss -- V DS 100 7 5 VDD = 25 V VGS = 10 V 3 2 9 0.9 Figure 9. SW Time -- I D 1000 7 5 0.8 Diode Forward Voltage, VSD - V IT00048 Drain Current, ID - A -25C Ta = -25C 0.1 0.1 25C 25C 2 Ta = 75C 3 Forward Current, IF - A Forward Transfer Admittance |yfs| - s 1.0 8 7 6 5 4 3 2 1 0.15 0.10 0.05 0 0 0 0.3 0.6 0.9 1.2 Total Gate Charge, Qg - nC 1.5 0 20 40 60 80 100 120 Ambient Temperature, Ta - C IT00052 Figure 13. Figure 12. www.onsemi.com 4 140 160 IT02381 5HN01SS PACKAGE DIMENSIONS SOT-623 / SSFP CASE 631AC ISSUE O www.onsemi.com 5 5HN01SS ORDERING INFORMATION Device Marking Package Shipping 5HN01SS-TL-E / 5HN01SS-TL-H YC SOT-623 / SSFP (Pb-Free / Halogen Free) 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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