NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES * The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz * Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz * High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V * Flat-lead 4-pin thin-type super minimold (M05) package ORDERING INFORMATION Part Number Quantity Supplying Form NESG2101M05-A 50 pcs (Non reel) * 8 mm wide embossed taping NESG2101M05-T1-A 3 kpcs/reel * Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 500 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Mounted on 38 38 mm, t = 0.4 mm polyimide PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10190EJ02V0DS (2nd edition) Date Published March 2003 CP(K) The mark shows major revised points. NESG2101M05 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 100 nA Emitter Cut-off Current IEBO DC Current Gain hFE VEB = 1 V, IC = 0 mA 100 nA Note 1 VCE = 2 V, IC = 15 mA 130 190 260 fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 GHz VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 dB RF Characteristics Gain Bandwidth Product S21e Insertion Power Gain 2 Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 0.9 1.2 dB Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt 0.6 dB Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 11.0 13.0 dB Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt 19.0 dB VCB = 2 V, IE = 0 mA, f = 1 MHz 0.4 0.5 pF VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 dB Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note 3 Gain 1 dB Compression Output Power Linear Gain PO (1 dB) VCE = 3.6 V, ICq = 10 mA, f = 2 GHz 21 dBm GL VCE = 3.6 V, ICq = 10 mA, f = 2 GHz 15 dB Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION 2 Rank FB Marking T1J hFE Value 130 to 260 Data Sheet PU10190EJ02V0DS NESG2101M05 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Data Sheet PU10190EJ02V0DS 3 NESG2101M05 4 Data Sheet PU10190EJ02V0DS NESG2101M05 Data Sheet PU10190EJ02V0DS 5 NESG2101M05 6 Data Sheet PU10190EJ02V0DS NESG2101M05 Data Sheet PU10190EJ02V0DS 7 NESG2101M05 8 Data Sheet PU10190EJ02V0DS NESG2101M05 Data Sheet PU10190EJ02V0DS 9 NESG2101M05 10 Data Sheet PU10190EJ02V0DS NESG2101M05 Remark The graphs indicate nominal characteristics. Data Sheet PU10190EJ02V0DS 11 NESG2101M05 S-PARAMETERS 12 Data Sheet PU10190EJ02V0DS NESG2101M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) (UNIT: mm) Data Sheet PU10190EJ02V0DS 13