2012-2013 Microchip Technology Inc. DS20002301B-page 1
RE46C317/18
Features:
• 3V Operation
• Low Quiescent Current
• 10V Boost Converter
• Low Horn Driver On-Resistance
• Compatible with RE46C117
Applications:
• Smoke Detectors
•CO Detectors
• Personal Security Products
• Elec t roni c Toys
Description:
The RE46 C317 /18 are CMO S piezoe lectri c horn d river
ICs with built-in boost converter. They are intended for
use in 3V battery or battery-backed applications. The
circuits feature a boost converter and a driver circuit
suitable for driving a piezoelectric horn.
The RE46C317/18 are compatible with the RE46C117
device and offer lower standby current.
The RE46C317 has three valid states of Horn Enable
(tri-state, low and high), while the RE46C318 has only
two valid states, low and high.
Package Types
Typical Appl ication
1
2
3
4
8
7
6
5
VDD
LX
VSS
FEED HRNEN
HORNS
HORNB
VO
RE46C317/18
PDIP, SOIC
EFED
VDD
HRNEN
HORNS
LX
VSS
HORNB
VO
RE46C317/18
2V to 5V
10 μF
10 μH
10 μF
1nF
200K1.5M
RE46C318 Only
Low
High
RE46C317 Only
Low
High
Tri-state
L1
C
1
D1
C3
C4R2
R1
V1
Note 1: Schottky diode D1 must have the maximum peak current rating of at least 1A. For best results, the
forward voltage spec should be less than 0.5V at 1A.
2: Inductor L3 mus t have the maxi mum peak current rating of at leas t 1A. For best results, the DC resistance
should be less than 0.5.
Piezoelectric Horn Driver with Boost Converter
RE46C317/18
DS20002301B-page 2 2012-2013 Microchip Technology Inc.
Functional Block Diagram
Gate Control
Tri-state Logic
Level Shifter
(RE46C317 Only)
Horn Driver
HRNEN
VSS
LX
HORNS
HORNB
VO
FEED
Standard Logic
Level Shifter
(RE46C318 Only)
Voltage Reference
+
-
+
-
V
DD
R1
R2R3
2012-2013 Microchip Technology Inc. DS20002301B-page 3
RE46C317/18
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings†
VDD.............................................................................................................................................................................5.5V
VOUT.........................................................................................................................................................................12.5V
Input Voltage Range Except FEED, LX................................................................................VIN =V
SS –.3V to V
DD +.3V
FEED Input Voltage Range .......................... ................. ..... ................. ................. ...... ...................VINFD =-10V to+22V
LX Input Voltage ...............................................................................................................................VINLX =V
OUT +0.8V
Input Current except FEED, LX ......................................................................................................................IIN =10mA
LX Current (Peak)...........................................................................................................................................IINLX =1.0A
Operati ng Temperature........................... ...... ................. ................. ..... ................. ............................TA=-10C to +60C
Storage Temperature ..................................................................................................................TSTG =-55C to +125C
Continuous Operating Current (HORNS, HORNB, VO).................................................................................. IO=40mA
Maximum Human Body Model ESD........................................................................................................................1500V
† Not ice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a s tress r ating o nly a nd fun ctiona l opera tio n of th e dev ice at these or any other condi tions abo ve tho se in dicate d in
the opera tio n listin gs of this specifi catio n is n ot imp lied. Expos ure to m aximum rating condi tions for ex tended period s
may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD
prevention procedures should be used when handling this product. Damage can occur when exposed to extremely
high static electrical charge.
DC ELECTRICAL CHARACTER IS T ICS – RE46C317
Unless otherwise indicated, all parameters apply at TA= -10°C to +60°C, VDD =3V, V
SS =0V, C
3=10µF.
Typical values are at TA=+25°C
Parameter Symbol Test
Pin Min. Typ. Max. Units Conditions
Supply Voltage VDD 22—5VOperating
Standby Supply Current IDD1 2 — 0.5 1 µA HRNEN = Float; No loads
Standby IVO IVO1 5 — 0 0.3 µA HRNEN = Float; No loads
Quiescent Supply Current IDD2 2 — 27 49 µA H RNEN = L ow; No Loads;
VO=11V; V
LX=0.5V
Quiescent I VO IVO2 5 — 71 115 µA HRNEN = Low; No Loads;
VO=11V; V
LX=0.5V
Supply current ISUP 2 — 300 — µA HRNEN = Low; No Loads,
Boost Running
Input Current for Tri-state IIT 8 -5 — 5 µA HRNEN = Float (Note 4)
Input Voltage High VIHH 8 2.6 — — V HRNEN input
VIHF 1 7 — — V FEED input; VO=10V
Note 1: The boost converter in Boost mode (normal VO= 10V) can draw current pulses of ~0.8A and therefore is very sensitive
to series resistance. The critical components of this resistance are the inductor DC resistance, the internal resistance of
the battery and the resistance in the connections from the inductor to the battery, from the inductor to the LX pin. In
order to function properly under full load at VDD = 2V, the total of the inductor and the interconnect resistances should
not exceed 0.3. The internal battery resistance should be no more than 0.5. A low ESR capacitance of 10 µF or more
should be connected in parallel with the battery to average current over the boost converter cyc le.
2: In the above table, wherever a specific VO value is listed under test conditions, the VO is forced externally with the
inductor disconnected, and the boost converter is not running.
3: The limits shown are 100% tested at +25°C only. Test limits are guard-banded, based on temperature characterization
to ensure compliance at temperature extremes.
4: This is the maximum input current that will not cause a logic high or logic low to be asserted.
RE46C317/18
DS20002301B-page 4 2012-2013 Microchip Technology Inc.
Input Voltage Low VILH 8 — — 0.4 V HRNEN input
VILF 1 — — 3 V FEED input; VO=10V
Input Leakage IIHF 1 — 20 50 µA FEED = 22V; VO= 10V
IILF 1 -50 -15 — µA FEED = -10V; VO= 10V
IIHH 8 — 20 50 µA HRNEN = VDD
IILH 8 -50 -20 — µA HRNEN = VSS
Output Lea ka ge IOZH 3 — — 1 µA HRNEN = Float;
VO= 12.5V; VLX =10V
VO Output Voltage VVO 591011VV
DD =3V,
HRNEN = Low or High,
IOUT =10mA
VO Efficiency VOEFF 5—80—%I
LOAD =10mA,
VDD = 3V, HRNEN = 0V
Output Low Voltage VOL 6, 7 — 0.3 0.5 V HORNB or HORNS
IOUT =-16mA, V
DD =3V
Output High Voltage VOH 6, 7 9.5 9.7 — V HORNB or HORNS
VO=10V
VDD = HRNEN = 3V
IOUT =16mA
DC ELECTRIC AL CHARACTERISTICS – RE46C317 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA= -10°C to +60°C, VDD =3V, V
SS =0V, C
3=10µF.
Typical values are at TA=+25°C
Parameter Symbol Test
Pin Min. Typ. Max. Units Conditions
Note 1: The boost converter in Boost mode (normal VO= 10V) can draw current pulses of ~0.8A and therefore is very sensitive
to series resistance. The critical components of this resistance are the inductor DC resistance, the internal resistance of
the battery and the resistance in the connections from the inductor to the battery, from the inductor to the LX pin. In
order to function properly under full load at VDD = 2V, the total of the inductor and the interconnect resistances should
not exceed 0.3. The internal battery resistance should be no more than 0.5. A low ESR capacitance of 10 µF or more
should be connected in parallel with the battery to average current over the boost converter cycle.
2: In the above table, wherever a specific VO value is listed under test conditions, the VO is forced externally with the
inductor disconnected, and the boost converter is not running.
3: The limits shown are 100% tested at +25°C only. Test limits are guard-banded, based on temperature characterization
to ensure compliance at temperature extremes.
4: This is the maximum input current that will not cause a logic high or logic low to be asserted.
2012-2013 Microchip Technology Inc. DS20002301B-page 5
RE46C317/18
DC ELECTRIC AL CHARACTERISTICS - RE46C318
Unless otherwise indicated, all parameters apply at TA= -10°C to +60°C, VDD =3V, V
SS =0V, C
3=10µF.
Typical values are at TA=+25°C.
Parameter Symbol Test
Pin Min. Typ. Max. Units Conditions
Supply Voltage VDD 2 2 — 5 V Operating
Standby Supply Current IDD1 2 — — 0.1 µA HRNEN = Low; No loads
Input Voltage High VIHH 8 2.3 — — V HRNEN i nput
VIHF 1 7 — — V FEED input; VO=10V
Input Voltage Low VILH 8 — — 1 V HRNEN input
VILF 1 — — 3 V FEED input; VO=10V
Input Leakage IIHF 1 — 20 50 µA FEED = 22V; VO=10V
IILF 1 -50 -15 — µA FEED = -10V; VO=10V
IIN 8 -100 — 100 nA HRNEN = VDD or VSS
Output Lea ka ge IOZH 3 — — 1 µA HRNEN = VSS,
VO=12.5V,
VLX =10V
VO Output Voltage VVO 591011VV
DD =3V,
HRNEN = High,
IOUT =10mA
VO Efficiency VVOEFF 5—80—%I
LOAD =10mA,
VDD =3V,
HRNEN = 0V
Output Low Voltage VOL 6, 7 — 0.3 0.5 V HORNB or HORNS;
IOUT =-16mA;
VDD =3V
Output High Voltage VOH 6, 7 9.5 9.7 — V HORNB or HORNS;
VO=10V;
VDD = HRNEN = 3V;
IOUT =16mA
AC ELECTRIC AL CHARACTERISTICS
Unless otherwise indicated, all parameters apply at TA= -10°C to +60°C, VDD =3V, V
SS =0V, C
3=10µF.
Typical values are at TA=+25°C.
Parameter Symbol Test Pin Min. Typ. Max. Units Conditions
Horn Delay THRN 8/6 or 8/7 — — 1 ms HRNEN = High; Boost Running;
16 mA Load
Note 1: Horn Delay is the delay between a high signal on HRNEN and the horn output turning ON. The internal circuitry delays
the horn output until the Boost voltage reaches its set point, 10V nominally.
TEMPERATURE CHARACTERISTICS
Electrical Characteristics : Unless otherwise indicated, VDD =3V, V
SS =0V
Parameter Symbol Min. Typ. Max. Units Conditions
Temperature Ranges
Operati ng Temperatu re Ra nge TA-10 — 60 °C
Storage Temperature Range TSTG -55 — 125 °C
Thermal Package Resistances
Thermal Resistance, 8L-PDIP JA —89.3—°C/W
Thermal Resistance, 8L-SOIC JA —149.5—°C/W
RE46C317/18
DS20002301B-page 6 2012-2013 Microchip Technology Inc.
NOTES:
2012-2013 Microchip Technology Inc. DS20002301B-page 7
RE46C317/18
2.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 2-1.
2.1 Horn Feedback Pin (FEED)
This pin is usually c onnected to the feedback electrode
of the piezoelectric horn through a current limiting
resisto r. If not used, thi s pin mu st be con nected to VSS.
2.2 Positive Supply Pin ( VDD)
This pin is connected to the positive supply voltage of
the system.
2.3 External Induct or Pin (LX)
This is the open drain NMOS output used to drive the
boost converter inductor. The inductor should be
connected from this pin to the positive supply voltage
through a low resistance path.
2.4 Negative Supply Pin (VSS)
This pin is connected to the negative supply voltage of
the system.
2.5 Boost Converter Output Pin (VO)
This is the output pin of the boost converter, typically
10V.
2.6 Horn Brass Pin (HORNB)
This pin is connected to the metal electrode (B) of the
piezoelectric transducer.
2.7 Horn Silver Pin (HORNS)
This is the complementary output to HORNB. It
connects to the ceramic electrode (S) of the
piezoelectric transducer.
2.8 Horn Enable Pin (HRNEN)
This is the logic input for horn enable. Tables 2-2
and 2-3 show the different HRNEN states and their
description.
TABLE 2-1: PIN FUNCTION TABLE
RE46C317/18 Symbol Description
PDIP, SOIC
1 FEED Horn Feedback
2V
DD Positive supply voltage
3 LX External inductor
4V
SS Negat ive su pply voltage
5V
OOutput of Boost converter
6 HORNB Horn Brass
7 HORNS Horn Silver
8 HRNEN Horn Enable
TABLE 2-2: RE46C317 HORN ENABLE
State Description
Tri -state St andby mode;
Boost converter is Disabled,
Horn is Disabled
Low Boost converter is Enabled,
Horn is Disabled
High Boost converter is Enabled,
Horn is Enabled
TABLE 2-3: RE46C318 HORN ENABLE
State Description
Low Standby mode;
Boost converter is Disabled,
Horn is Disabled
High Boost converter is Enabled,
Horn is Enabled
RE46C317/18
DS20002301B-page 8 2012-2013 Microchip Technology Inc.
NOTES:
2012-2013 Microchip Technology Inc. DS20002301B-page 9
RE46C317/18
3.0 DEVICE DESCRIPTION
RE46C317 and RE46C318 have thr ee main blocks:
• Horn driver
• Boost regulator
• Horn Enable logic
The following sections describe these blocks.
3.1 Horn Driver
The horn driv er is a pu sh-pul l circu it, cap able of dri ving
a three-terminal piezoelectric horn. It can also drive a
modified two-terminal Piezo horn.
3.2 Horn Enable
In RE46C317, the HRNEN is a tri-state signal with
three valid states: low, high and tri-state (or mid-
supply). The three levels of HRNEN determine the
modes of opera tion.
When HRNEN is in tri-state, the device is in Standby
mode and all circuits are disabled. This is the lowest
current operating mode.
When HRNEN is low , the device is in Boost-Only mode.
In this mode, only the boost regulator is enabled and
the output voltage is boosted to 10V nominally. The
horn driver circuit is disabled in this mode. This mode
can be used to check for a low battery condition.
When HRNEN is high, the part is in Normal Operation.
The boost regulator and the horn driver circuits are
enabled in this mode.
The RE46C318 uses a binary logic circuit, rather than
tri-state logic, to determine the mode of operation.
When HRNEN is low , the boost and horn driver circuits
are disabled and the device is in Standby. This is the
lowest current operating mode.
When HRNEN is high, the boost and horn driver
circuits are enabled.
3.3 Boost Regulator
The boost regulator in the RE46C317/18 is a
current-mode controller with two control loops, that
work together in maintaining a constant output voltage
and suppl y the requi red load c urrent. The inner curre nt
control loop provides cycle-by-cycle current limiting,
while the outer control loop provides output voltage
control. When the boost converter is turned on using
the HRNEN input, the NMOS s witch turns on and the
inductor current ramps up to its peak value,
approximately 0.6A nominally.
The current comparator turns off the NMOS switch for
a fixed period of time to allow energy to be transferred
to the ou tput cap acito r. When the vo lta ge on th e outp ut
capacitor equals or exceeds th e desired output voltage,
10V nominally, the current loop is disabled until the
load di sc harges th e o utpu t c apaci tor to a v oltage lower
than the desire d outpu t voltage .
Every time the output voltage falls below the desired
value, the switching cycle starts and continues until the
desired value is reached. The constant switching
resulting in the charging and discharging of the output
capacitor causes a ripple on the output voltage. The
ripple on the output voltage depends on the external
component parameters, such as the value of external
capacitor, its ESR, et c.
In both RE46C317 and RE46C318, when logic high is
asserted on the HRNEN pin, the boost regulator is
enabled. However, the horn output is not enabled until
the output voltage reaches its nominal set point, 10V
nominally. This ensures that the output voltage rises
quickly to the necessary drive voltage for the Piezo
horn.
The boost regulator has been optimized to work with
the external components as shown in the Typical
Application circuit.
RE46C317/18
DS20002301B-page 10 2012-2013 Microchip Technology Inc.
Figure 3-1 shows the horn turn-on delay after the
HRNEN has been asserted high. After the boost
voltage reaches its nominal set point, the HORNB
output turns on. In this case, the HORNB output is
driving a load current of 20 mA DC.
FIGURE 3-1: RE46C317 Horn Turn-On
Delay.
Figure 3-2 shows the typical switching waveforms of
the boos t regulato r . Th e top wavefo rm shows t he boost
output, the center waveform shows the LX switching
wavef orm , an d th e lo w er wa veform sh ow s the ind uc tor
current.
FIGURE 3-2: RE46C317/18 Switching
Waveforms.
2012-2013 Microchip Technology Inc. DS20002301B-page 11
RE46C317/18
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
8-Lead PDIP (300 mil) Example
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (3.90 mm) Example
NNN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric trac eab il ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free J EDEC designat or ( )
can be found on the outer packaging for this package.
Note: In the event t he full Mic roch ip p art numb er canno t be marked on one line, it wil l
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
RE46C318
V/P ^^256
1315
3
e
RE46C317
SN ^^1315
256
3
e
RE46C317/18
DS20002301B-page 12 2012-2013 Microchip Technology Inc.
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
2012-2013 Microchip Technology Inc. DS20002301B-page 13
RE46C317/18
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
RE46C317/18
DS20002301B-page 14 2012-2013 Microchip Technology Inc.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc. DS20002301B-page 15
RE46C317/18
! ""#$%& !'
RE46C317/18
DS20002301B-page 16 2012-2013 Microchip Technology Inc.
NOTES:
RE46C317/18
DS20002301B-page 18 2012-2013 Microchip Technology Inc.
NOTES:
2012-2013 Microchip Technology Inc. DS20002301B-page 19
RE46C317/18
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO. X X
Lead Free/Package
Device
Device: RE46C317 CMOS Piezo Horn Driver IC
RE46C318 CMOS Piezo Horn Driver IC
Package: E = Plastic Dual In-Line (300 mil Body), 8-Lead (PDIP)
S = S mall Plastic Outline - Narrow, 3.90 mm Body,
8-Lead (S OIC)
Examples:
a) RE46C 317 E8F : 8LD PDIP package,
Lead Free
b) RE46C317S8F: 8LD SOIC package,
Lead Free
c) RE46C317S8TF: 8LD SOIC package,
Tape and Reel
a) RE46C318E8F: 8LD PDIP package,
Lead Free
b) RE46C318S8F: 8LD SOIC package,
Lead Free
c) RE46C318S8TF: 8LD SOIC package,
Tape and Reel
X
Number
of Pins Tape and Reel
RE46C317/18
DS20002301B-page 20 2012-2013 Microchip Technology Inc.
NOTES:
2012-2013 Microchip Technology Inc. DS20002301B-page 21
Information contained in this publication regarding device
applications a nd the lik e is pro vid ed only for your c on ve nience
and may be supers eded by u pdates. It is y our res po ns i bil it y to
ensure that your application meets with your specifications.
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
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The Microchip name and logo, the Microchip logo, dsPIC,
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Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI- TIDE, In-Circu it Se r i a l
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
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© 2012-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-213-3
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intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
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Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Mill ennium Copyright Act. If such act s
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YSTEM
CERTIFIED BY DNV
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DS20002301B-page 22 2012-2013 Microchip Technology Inc.
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China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11- 4160-8632
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsi ung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangko k
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Cop e nha gen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-14 4-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madri d
Tel: 34-91-708-08-90
Fax: 34-91-708-08 -91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Worldwide Sales and Service
11/29/12
