
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 07/25/19
Thyristors
Surface Mount – 200V - 600V > MAC08BT1, MAC08MT1
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 110°C) MAC08BT1
MAC08MT1 VDRM,
VRRM
200
600 V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 0.8 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 8.0 A
Circuit Fusing Consideration (t = 8.3 msec) I2t 0.4 A²sec
Peak Gate Power (Pulse Width ≤ 10 µsec, TC= 80°C) PGM 5.0 W
Average Gate Power (t = 8.3 msec, TC= 80°C) PG(AV) 0.1 W
Operating Junction Temperature Range TJ-40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended
exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential
on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8" from case for 10 seconds.
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 R8JA 156 °C/W
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Characteristic Symbol Min Ty p Max Unit
Peak On−State Voltage (Note 2) (ITM = ±1.1 A) VTM − − 1.9 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT – – 10 mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±20 mA)) IH− − 5.0 mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT – – 2.0 V
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Ty p Max Unit
†Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open) TJ = 25°C
TJ = 110°C IDRM,
IRRM
- - 10 µA
- - 200 mA
Electrical Characteristics - ON (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On−State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 Ω, See Figure 10)
(dI/dt)c 1.5 − − A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x VDRM, Exponential Waveform, Gate Open, TJ = 110°C) dV/dt 10 − − V/µs