Continental Device India Limited Data Sheet Page 1 of 3
BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS
BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS
Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS 949 951 953 955
950 952 954 956
Collector-base voltage (open emitter) VCBO max. 60 80 100 120 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 120 V
Collector current ICmax. 5.0 A
Total power dissipation up to Tmb = 25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 2 A; IB = 0.2 A VCEsat max. 1.0 V
D.C. current gain
IC = 2 A; VCE = 4 V hFE min. 20
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 949 951 953 955
950 952 954 956
Collector-base voltage (open emitter) VCBO max. 60 80 100 120 V
Collector-emitter voltage (open base) VCEO max. 60 80 100 120 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 5.0 A
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Continental Device India Limited Data Sheet Page 2 of 3
Collector current (Peak value) ICM max. 8.0 A
Total power dissipation upto Tmb =25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 °C
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 K/W
From junction to mounting base Rth j–mb 3.12 K/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 949 951 953 955
950 952 954 956
Collector cutoff current
IE = 0; VCB = VCBO ICBO max. 50 µA
IE = 0; VCB = ½ VCBO; Tj = 150°C ICBO max. 1.0 mA
IB = 0; VCE = ½ VCEO ICEO max. 0.1 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 0.2 mA
Breakdown voltages
IC = 1 mA; IB = 0 VCEO min. 60 80 100 120 V
IC = 1 mA; IE = 0 VCBO min. 60 80 100 120 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 2 A; IB = 0.2 A VCEsat* max. 1.0 V
Base emitter on voltage
IC = 2 A; VCE = 4 V VBE(on)* max. 1.4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V hFE* min. 40
IC = 2 A; VCE = 4 V hFE* min. 20
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz fTmin. 3 MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20
Turn on time NPN ton typ. 0.3 µs
Turn off time NPN toff typ. 1.5 µs
PNP ton typ. 0.1 µs
PNP toff typ. 0.4 µs
* Measured under pulse conditions: tp 300µs; duty cycle 2%
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
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