Continental Device India Limited Data Sheet Page 2 of 3
Collector current (Peak value) ICM max. 8.0 A
Total power dissipation upto Tmb =25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150 °C
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 K/W
From junction to mounting base Rth j–mb 3.12 K/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 949 951 953 955
950 952 954 956
Collector cutoff current
IE = 0; VCB = VCBO ICBO max. 50 µA
IE = 0; VCB = ½ VCBO; Tj = 150°C ICBO max. 1.0 mA
IB = 0; VCE = ½ VCEO ICEO max. 0.1 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 0.2 mA
Breakdown voltages
IC = 1 mA; IB = 0 VCEO min. 60 80 100 120 V
IC = 1 mA; IE = 0 VCBO min. 60 80 100 120 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 2 A; IB = 0.2 A VCEsat* max. 1.0 V
Base emitter on voltage
IC = 2 A; VCE = 4 V VBE(on)* max. 1.4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V hFE* min. 40
IC = 2 A; VCE = 4 V hFE* min. 20
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz fTmin. 3 MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20Ω
Turn on time NPN ton typ. 0.3 µs
Turn off time NPN toff typ. 1.5 µs
PNP ton typ. 0.1 µs
PNP toff typ. 0.4 µs
* Measured under pulse conditions: tp ≤ 300µs; duty cycle ≤ 2%
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956