Data Sheet Switching Diode UMN10N Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 0.65 2.00.2 0.25 0.1 Each lead has same dimension 0.05 (6) (5) (1) (2) 0.150.05 (4) 0.9 2.10.1 1.250.1 1.6 Features 1) Small mold type. (UMD6) 2) High reliability. 0.65 0.35 0.65 0.1Min 00.1 (3) 0.65 Construction Silicon epitaxial planar UMD6 0.7 1.30.1 0.90.1 ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Structure Taping specifications (Unit : mm) 1.50.1 0 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) Forward current repetitive peak (Single) IFM Average rectified forward current (single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 1.10.1 4.00.1 2.20.1 Limits 2.40.1 8.00.2 5.50.2 00.5 2.450.1 2.40.1 3.50.05 1.750.1 4.00.1 1.150.1 Unit V V mA mA A mW C C 80 80 300 100 4 200 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Data Sheet UMN10N Ta=150 10000 Ta=75 Ta=25 Ta=150 Ta=-25 1 1000 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 80 930 920 910 80 70 60 50 40 AVE:9.655nA 30 20 AVE:921.7mV 900 1.2 1.1 1 0.9 0.7 0.6 0 0.5 Ct DISPERSION MAP 10 10 5 AVE:3.50A 8 7 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 6 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms 1 0.001 100 IF=50mA time 300us 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.081pF 0.8 IR DISPERSION MAP 15 20 Ta=25 VR=6V f=1MHz n=10pcs 1.3 10 VF DISPERSION MAP 20 15 1.4 Ta=25 VR=80V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 940 10 1.5 90 Ta=25 IF=100mA n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 950 FORWARD VOLTAGE:VF(mV) 1 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=125 f=1MHz Ta=125 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 4 3 2 1 0 1000 AVE:2.54kV AVE:0.97kV C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A