5962R8771003V9A - Defense Logistics Agency

January 13, 2009

LM158QML

Low Power Dual Operational Amplifiers

General Description

The LM158 series consists of two independent, high gain, in-

ternally frequency compensated operational amplifiers which

were designed specifically to operate from a single power

supply over a wide range of voltages. Operation from split

power supplies is also possible and the low power supply

current drain is independent of the magnitude of the power

supply voltage.

Application areas include transducer amplifiers, dc gain

blocks and all the conventional op amp circuits which now can

be more easily implemented in single power supply systems.

For example, the LM158 series can be directly operated off

of the standard +5V power supply voltage which is used in

digital systems and will easily provide the required interface

electronics without requiring the additional ±15V power sup-

plies.

Unique Characteristics

■In the linear mode the input common-mode voltage range

includes ground and the output voltage can also swing to

ground, even though operated from only a single power

supply voltage.

■The unity gain cross frequency is temperature

compensated.

■The input bias current is also temperature compensated.

Advantages

■Two internally compensated op amps

■Eliminates need for dual supplies

■Allows direct sensing near Gnd and VO also goes to Gnd

■Compatible with all forms of logic

■Power drain suitable for battery operation

Features

■Available with radiation guarantee

—High Dose Rate 100 krad(Si)

—ELDRS Free 100 krad(Si)

■Internally frequency compensated for unity gain

■Large dc voltage gain: 100 dB

■Wide bandwidth (unity gain): 1 MHz

(temperature compensated)

■Wide power supply range:

—Single supply: 3V to 32V

—or dual supplies: ±1.5V to ±16V

■Very low supply current drain (500 μA) − essentially

independent of supply voltage

■Low input offset voltage: 2 mV

■Input common-mode voltage range includes ground

■Differential input voltage range equal to the power supply

voltage

■Large output voltage swing: 0V to V+ − 1.5V

Ordering Information

NS Part Number SMD Part Number NS Package Number Package Description

LM158H/883 H08C 8LD T0–99 Metal Can

LM158J/883 5962–8771001PA J08A 8LD Ceramic DIP

LM158H-SMD 5962–8771001GA H08C 8LD T0–99 Metal Can

LM158AH/883 5962–8771002GA H08C 8LD T0–99 Metal Can

LM158AJ/883 5962–8771002PA J08A 8LD Ceramic DIP

LM158AWG/883 5962–8771002QXA WG10A 10LD Ceramic SOIC

LM158AHRQMLV

HIGH DOSE RATE ONLY (Note 11)

5962R8771002VGA

100 krad(Si)

H08C 8LD T0–99 Metal Can

LM158AJ-QMLV 5962–8771002VPA J08A 8LD Ceramic DIP

LM158AJRQMLV

HIGH DOSE RATE ONLY (Note 11)

5962R8771002VPA

100 krad(Si)

J08A 8LD Ceramic DIP

LM158AWGRQMLV

HIGH DOSE RATE ONLY (Note 11)

5962R8771002VXA

100 krad(Si)

WG10A 10LD Ceramic SOIC

LM158A MDR

HIGH DOSE RATE ONLY DIE (Notes 1, 11)

5962R8771002V9A

100 krad(Si)

LM158AHRLQMLV

ELDRS FREE ONLY (Note 12)

5962R8771003VGA

100 krad(Si)

H08C 8LD T0–99 Metal Can

LM158AJRLQMLV

ELDRS FREE ONLY (Note 12)

5962R8771003VPA

100 krad(Si)

J08A 8LD Ceramic DIP

LM158QML Low Power Dual Operational Amplifiers

NS Part Number SMD Part Number NS Package Number Package Description

LM158AWGRLQMLV

ELDRS FREE ONLY (Note 12)

5962R8771003VXA

100 krad(Si)

WG10A 10LD Ceramic SOIC

LM158A MDE

ELDRS FREE ONLY DIE (Notes 1, 12)

5962R8771003V9A

100 krad(Si)

Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die

Connection Diagrams

Metal Can Package

20150201

Top View

See NS Package Number H08C

DIP Package

20150204

Top View

See NS Package Number J08A

10LD Ceramic SOIC

20150202

Top View

See NS Package Number WG10A

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LM158QML

Schematic Diagram

(Each Amplifier)

20150203

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LM158QML

Absolute Maximum Ratings (Note 2)

Supply Voltage, V+32VDC

Differential Input Voltage 32VDC

Input Voltage −0.3VDC to +32VDC

Power Dissipation (Note 3) 830 mW

Output Short-Circuit to GND(Note 4)

(One Amplifier)

V+ ≤ 15VDC and TA = 25°C

Continuous

Maximum Junction Temperature (TJmax) 150°C

Input Current (VI < −0.3V)(Note 5) 50 mA

Operating Temperature Range −55°C ≤ TA ≤ +125°C

Storage Temperature Range −65°C ≤ TA ≤ +150°C

Lead Temperature (Soldering, 10 seconds)

Metal Can 300°C

Ceramic DIP 260°C

Ceramic SOIC 260°C

Thermal Resistance

θJA

Metal Can (Still Air) 155°C/W

Metal Can (500LF/Min Air Flow) 80°C/W

Ceramic DIP (Still Air) 132°C/W

Ceramic DIP (500LF/Min Air Flow) 81°C/W

Ceramic SOIC (Still Air) 195°C/W

Ceramic SOIC (500LF/Min Air Flow) 131°C/W

θJC

Metal Can 42°C/W

Ceramic DIP 23°C/W

Ceramic SOIC 33°C/W

Package Weight

Metal Can 1,000mg

Ceramic DIP 1,100mg

Ceramic SOIC 220mg

ESD Tolerance (Note 8) 250V

Quality Conformance Inspection

Mil-Std-883, Method 5005 - Group A

Subgroup Description Temp °C

1 Static tests at +25

2 Static tests at +125

3 Static tests at -55

4 Dynamic tests at +25

5 Dynamic tests at +125

6 Dynamic tests at -55

7 Functional tests at +25

8A Functional tests at +125

8B Functional tests at -55

9 Switching tests at +25

10 Switching tests at +125

11 Switching tests at -55

12 Settling time at +25

13 Settling time at +125

14 Settling time at -55

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LM158QML

LM158 Electrical Characteristics SMD 5962–8771001

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Symbol Parameter Conditions Notes Min Max Units Sub-

groups

ICC Power Supply Current +VCC = 5V, RL = 100K,

VO = 1.4V

1.2 mA 1, 2, 3

+VCC = 30V, RL = 100K,

VO = 1.4V

3.0 mA 1

4.0 mA 2, 3

VOH Output Voltage High +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3

+VCC = 30V, RL = 10KΩ 27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL = 10KΩ 20 mV 1, 2, 3

+VCC = 30V, ISink = 1µA 20 mV 1, 2, 3

+VCC = 5V, RL = 10KΩ 20 mV 1, 2, 3

ISink Output Sink Current +VCC = 15V, VO = 200mV,

+VI = 0V, -VI = +65mV

12 µA 1

+VCC = 15V, VO = 2V,

+VI = 0V, -VI = +65mV

10 mA 1

5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO = 2V,

+VI = 0V, -VI = -65mV

-20 mA 1

-10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO = 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-5.0 5.0 mV 1

-7.0 7.0 mV 2, 3

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

-5.0 5.0 mV 1

+VCC = 30V, VCM = 28V,

RS = 50Ω, VO = 1.4V

-7.0 7.0 mV 2, 3

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-5.0 5.0 mV 1

-7.0 7.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω

VI = 0V to 28.5V,

70 dB 1

±IIB Input BIas Current +VCC = 5V, VCM = 0V (Note 6) -150 -1.0 nA 1

(Note 6) -300 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -30 30 nA 1

-100 100 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V,

VCM = 0V

65 dB 1

VCM Common Mode Voltage Range +VCC = 30V (Note 7),

(Note 9)

28.5 V 1

(Note 7),

(Note 9)

28.0 V 2, 3

VDiff Differential Input Voltage (Note 10) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL = 2KΩ,

VO = 1V to 11V

50 V/mV 4

25 V/mV 5, 6

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LM158QML

LM158A Electrical Characteristics SMD 5962–8771002, High Dose Rate

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Symbol Parameter Conditions Notes Min Max Units Sub-

groups

ICC Power Supply Current +VCC = 5V, RL = 100K,

VO = 1.4V

1.2 mA 1, 2, 3

+VCC = 30V, RL = 100K,

VO = 1.4V

3.0 mA 1

4.0 mA 2, 3

VOH Output Voltage High +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3

+VCC = 30V, RL = 10KΩ 27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL = 10KΩ 40 mV 1

100 mV 2, 3

+VCC = 30V, ISink = 1µA 40 mV 1

100 mV 2, 3

+VCC = 5V, RL = 10KΩ 40 mV 1

100 mV 2, 3

ISink Output Sink Current +VCC = 15V, VO = 200mV,

+VI = 0V, -VI = +65mV

12 µA 1

+VCC = 15V, VO = 2V,

+VI = 0V, -VI = +65mV

10 mA 1

5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO = 2V,

+VI = 0V, -VI = -65mV

-20 mA 1

-10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO = 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

-4.0 4.0 mV 2, 3

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

+VCC = 30V, VCM = 28V,

RS = 50Ω, VO = 1.4V

-4.0 4.0 mV 2, 3

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

-4.0 4.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω

VI = 0V to 28.5V,

70 dB 1

±IIB Input BIas Current +VCC = 5V, VCM = 0V (Note 6) -50 -1.0 nA 1

(Note 6) -100 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -10 10 nA 1

-30 30 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V,

VCM = 0V

65 dB 1

VCM Common Mode Voltage Range +VCC = 30V (Notes 7,

28.5 V 1

(Notes 7,

28.0 V 2, 3

VDiff Differential Input Voltage (Note 10) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL = 2KΩ,

VO = 1V to 11V

50 V/mV 4

25 V/mV 5, 6

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LM158QML

SMD 5962–8771002, High Dose Rate

DC Drift Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.

Symbol Parameter Conditions Notes Min Max Units Sub-

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

±IIB Input Bias Current +VCC = 5V, VCM = 0V (Note 6) -10 10 nA 1

SMD 5962–8771002, High Dose Rate

100K Post Radiation Limits @ +25°C (Note 11)

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Symbol Parameter Conditions Notes Min Max Units Sub -

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

(Note 11) -4.0 4.0 mV 1

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

(Note 11) -4.0 4.0 mV 1

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

(Note 11) -4.0 4.0 mV 1

±IIB Input Bias Current +VCC = 5V, VCM = 0V (Notes 6,

11)

-60 -1.0 nA 1

ICC Power Supply Current +VCC = 5V, RL = 100K,

VO = 1.4V

(Note 11) 1.5 mA 1

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LM158QML

LM158A Electrical Characteristics SMD 5962–8771003 ELDRS Free Only

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Symbol Parameter Conditions Notes Min Max Units Sub-

groups

ICC Power Supply Current +VCC = 5V, RL = 100K,

VO = 1.4V

1.2 mA 1, 2, 3

+VCC = 30V, RL = 100K,

VO = 1.4V

3.0 mA 1,

4.0 2, 3

VOH Output Voltage High +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3

+VCC = 30V, RL = 10KΩ 27 V 1, 2, 3

VOL Output Voltage Low +VCC = 30V, RL = 10KΩ 40 mV 1

100 mV 2, 3

+VCC = 30V, ISink = 1µA 40 mV 1

100 mV 2, 3

+VCC = 5V, RL = 10KΩ 40 mV 1

100 mV 2, 3

ISink Output Sink Current +VCC = 15V, VO = 200mV,

+VI = 0V, -VI = +65mV

12 µA 1

+VCC = 15V, VO = 2V,

+VI = 0V, -VI = +65mV

10 mA 1

5.0 mA 2, 3

ISource Output Source Current +VCC = 15V, VO = 2V,

+VI = 0V, -VI = -65mV

-20 mA 1

-10 mA 2, 3

IOS Short Circuit Current +VCC = 5V, VO = 0V -60 mA 1

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

-4.0 4.0 mV 2, 3

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

+VCC = 30V, VCM = 28V,

RS = 50Ω, VO = 1.4V

-4.0 4.0 mV 2, 3

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-2.0 2.0 mV 1

-4.0 4.0 mV 2, 3

CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω

VI = 0V to 28.5V,

70 dB 1

±IIB Input BIas Current +VCC = 5V, VCM = 0V (Note 6) -50 -1.0 nA 1

(Note 6) -100 -1.0 nA 2, 3

IIO Input Offset Current +VCC = 5V, VCM = 0V -10 10 nA 1

-30 30 nA 2, 3

PSRR Power Supply Rejection Ratio +VCC = 5V to 30V,

VCM = 0V

65 dB 1

VCM Common Mode Voltage Range +VCC = 30V (Note 7),

(Note 9)

28.5 V 1

(Note 7),

(Note 9)

28.0 V 2, 3

VDiff Differential Input Voltage (Note 10) 32 V 1, 2, 3

AVS Large Signal Gain +VCC = 15V, RL = 2KΩ,

VO = 1V to 11V

50 V/mV 4

25 V/mV 5, 6

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LM158QML

SMD 5962–8771003, ELDRS Free Only

DC Drift Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.

Symbol Parameter Conditions Notes Min Max Units Sub-

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

-0.5 0.5 mV 1

±IIB Input Bias Current +VCC = 5V, VCM = 0V (Note 6) -10 10 nA 1

SMD 5962–8771003, ELDRS Free Only

100K Post Radiation Limits @ +25°C (Note 12)

DC Parameters

The following conditions apply, unless otherwise specified. All voltages referenced to device ground.

Symbol Parameter Conditions Notes Min Max Units Sub -

groups

VIO Input Offset Voltage +VCC = 30V, VCM = 0V,

RS = 50Ω, VO = 1.4V

(Note 12) -4.0 4.0 mV 1

+VCC = 30V, VCM = 28.5V,

RS = 50Ω, VO = 1.4V

(Note 12) -4.0 4.0 mV 1

+VCC = 5V, VCM = 0V,

RS = 50Ω, VO = 1.4V

(Note 12) -4.0 4.0 mV 1

±IIB Input Bias Current +VCC = 5V, VCM = 0V (Notes 6,

12)

-60 -1.0 nA 1

Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed

specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test

conditions.

Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package

junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/

θJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 4: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output

current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the

power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.

Note 5: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP

transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action

on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time

duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again

returns to a value greater than −0.3V (at 25°C).

Note 6: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output

so no loading change exists on the input lines.

Note 7: The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The upper end of the

common-mode voltage range is V+ −1.5V (at 25°C), but either or both inputs can go to +32V without damage, independent of the magnitude of V+.

Note 8: Human body model, 1.5 kΩ in series with 100 pF.

Note 9: Guaranteed by input offset voltage.

Note 10: Guaranteed parameter not tested.

Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.

These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted

parameters are guaranteed only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A.

Note 12: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.

These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a wafer-by-wafer basis, per Test Method 1019, Condition

D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS).

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LM158QML

Typical Performance Characteristics

Input Voltage Range

20150234

Input Current

20150235

Supply Current

20150236

Voltage Gain

20150237

Open Loop Frequency Response

20150238

Common-Mode Rejection Ratio

20150239

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LM158QML

Voltage Follower Pulse Response

20150240

Voltage Follower Pulse Response (Small Signal)

20150241

Large Signal Frequency Response

20150242

Output Characteristics Current Sourcing

20150243

Output Characteristics Current Sinking

20150244

Current Limiting

20150245

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LM158QML

Application Hints

The LM158 series are op amps which operate with only a

single power supply voltage, have true-differential inputs, and

remain in the linear mode with an input common-mode volt-

age of 0 VDC. These amplifiers operate over a wide range of

power supply voltage with little change in performance char-

acteristics. At 25°C amplifier operation is possible down to a

minimum supply voltage of 2.3 VDC.

Precautions should be taken to insure that the power supply

for the integrated circuit never becomes reversed in polarity

or that the unit is not inadvertently installed backwards in a

test socket as an unlimited current surge through the resulting

forward diode within the IC could cause fusing of the internal

conductors and result in a destroyed unit.

Large differential input voltages can be easily accommodated

and, as input differential voltage protection diodes are not

needed, no large input currents result from large differential

input voltages. The differential input voltage may be larger

than V+ without damaging the device. Protection should be

provided to prevent the input voltages from going negative

more than −0.3 VDC (at 25°C). An input clamp diode with a

resistor to the IC input terminal can be used.

To reduce the power supply current drain, the amplifiers have

a class A output stage for small signal levels which converts

to class B in a large signal mode. This allows the amplifiers

to both source and sink large output currents. Therefore both

NPN and PNP external current boost transistors can be used

to extend the power capability of the basic amplifiers. The

output voltage needs to raise approximately 1 diode drop

above ground to bias the on-chip vertical PNP transistor for

output current sinking applications.

For ac applications, where the load is capacitively coupled to

the output of the amplifier, a resistor should be used, from the

output of the amplifier to ground to increase the class A bias

current and prevent crossover distortion. Where the load is

directly coupled, as in dc applications, there is no crossover

distortion.

Capacitive loads which are applied directly to the output of the

amplifier reduce the loop stability margin. Values of 50 pF can

be accommodated using the worst-case non-inverting unity

gain connection. Large closed loop gains or resistive isolation

should be used if larger load capacitance must be driven by

the amplifier.

The bias network of the LM158 establishes a drain current

which is independent of the magnitude of the power supply

voltage over the range of 3 VDC to 30 VDC.

Output short circuits either to ground or to the positive power

supply should be of short time duration. Units can be de-

stroyed, not as a result of the short circuit current causing

metal fusing, but rather due to the large increase in IC chip

dissipation which will cause eventual failure due to excessive

junction temperatures. Putting direct short-circuits on more

than one amplifier at a time will increase the total IC power

dissipation to destructive levels, if not properly protected with

external dissipation limiting resistors in series with the output

leads of the amplifiers. The larger value of output source cur-

rent which is available at 25°C provides a larger output current

capability at elevated temperatures (see typical performance

characteristics) than a standard IC op amp.

The circuits presented in the section on typical applications

emphasize operation on only a single power supply voltage.

If complementary power supplies are available, all of the stan-

dard op amp circuits can be used. In general, introducing a

pseudo-ground (a bias voltage reference of V+/2) will allow

operation above and below this value in single power supply

systems. Many application circuits are shown which take ad-

vantage of the wide input common-mode voltage range which

includes ground. In most cases, input biasing is not required

and input voltages which range to ground can easily be ac-

commodated.

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LM158QML

Typical Single-Supply Applications

(V+ = 5.0 VDC)

Non-Inverting DC Gain (0V Output)

20150206

*R not needed due to temperature independent IIN

20150207

DC Summing Amplifier

(VIN'S ≥ 0 VDC and VO ≥ 0 VDC)

20150208

Where: VO = V1 + V2 −V3 − V4

(V1 + V2) ≥ (V3 + V4) to keep VO > 0 VDC

Power Amplifier

20150209

VO = 0 VDC for VIN = 0 VDC

AV = 10

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LM158QML

“BI-QUAD” RC Active Bandpass Filter

20150210

fo = 1 kHz

Q = 50

Av = 100 (40 dB)

Fixed Current Sources

20150211

Lamp Driver

20150212

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LM158QML

LED Driver

20150213

Current Monitor

20150214

*(Increase R1 for IL small)

VL ≤ V+ −2V

Driving TTL

20150215

Voltage Follower

20150217

VO = VIN

Pulse Generator

20150216

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LM158QML

Squarewave Oscillator

20150218

Pulse Generator

20150219

Low Drift Peak Detector

20150220

HIGH ZIN

LOW ZOUT

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LM158QML

High Compliance Current Sink

20150221

IO = 1 amp/volt VIN

(Increase RE for IO small)

Comparator with Hysteresis

20150222

Voltage Controlled Oscillator (VCO)

20150223

*WIDE CONTROL VOLTAGE RANGE: 0 VDC ≤ VC ≤ 2 (V+ −1.5V DC)

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LM158QML

AC Coupled Inverting Amplifier

20150224

Ground Referencing a Differential Input Signal

20150225

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LM158QML

AC Coupled Non-Inverting Amplifier

20150226

Av = 11 (As Shown)

DC Coupled Low-Pass RC Active Filter

20150227

fo = 1 kHz

Q = 1

AV = 2

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LM158QML

Bandpass Active Filter

20150228

fo = 1 kHz

Q = 25

High Input Z, DC Differential Amplifier

20150229

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LM158QML

Photo Voltaic-Cell Amplifier

20150230

Bridge Current Amplifier

20150233

High Input Z Adjustable-Gain

DC Instrumentation Amplifier

20150231

21 www.national.com

LM158QML

Using Symmetrical Amplifiers to

Reduce Input Current (General Concept)

20150232

www.national.com 22

LM158QML

Revision History

Date Released Revision Section Originator Changes

07/12/05 A New release to corporate fomat. L. Lytle 2 MDS datasheets converted into one

Corporate datasheet format. MNLM158-X-RH

Rev 1C1 & MNLM158-X Rev 1A1 will be

archived.

01/09/06 B Typical Single-Supply Applications R. Malone Correct an equation From: V1 + V2 + V3 + V4

To: V1 + V2 - V3 - V4 (right after art -08, pg

12). Reason: To reflect same correction made

in commercial data sheet. Revision A will be

archived.

01/27/06 C Features, Ordering Information Table

and Post Radiation Electrical's

Larry McGee Added reference to radiation, NSID's to

Ordering Table and Post Rad limits for 100k

10/05/06 D Connection Diagram, page 2 R. Malone Corrected typo title for Ceramic SOIC.

Revision C will be Archived

08/21/08 E Features, Ordering Information,

Electrical Sections and Notes.

Larry McGee Added reference to ELDRS, NSID's to

Ordering Table, and ELDRS Electricals.

Deleted 50k Rad NSID's and Post Rad table.

Revision D will be Archived.

01/13/09 F Ordering Information, ELDRS

Electrical Section, Notes 11 and 12

Larry McGee Deleted NSID's LM158AH-QMLV and

LM158AWG-QMLV code K. Changed DC and

Post Rad ELDRS Electricals. Changed Notes

11 and 12 wording. Revision E will be

Archived.

23 www.national.com

LM158QML

Physical Dimensions inches (millimeters) unless otherwise noted

Metal Can Package (H)

NS Package Number H08C

CERDIP Package (J)

NS Package Number J08A

www.national.com 24

LM158QML

10LD Ceramic SOIC Package

NS Package Number WG10A

25 www.national.com

LM158QML

Notes

LM158QML Low Power Dual Operational Amplifiers

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