Data Sheet 1 of 11 Rev. 03, 2008-10-22
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs
designed for EDGE and CDMA power amplifier applications in the
869 to 960 MHz band. Features include input matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA080551E
Package H-36265-2
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Three-carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
0
5
10
15
20
25
30
35
40
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
-35
Adj. Ch. Power Ratio (dBc)
ACP Low
ACP Up
ALT Up
Efficiency
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 26 W AVG, ƒ = 959.8 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude EVM (RMS) —2.5 —%
Modulation Spectrum @ 400 kHz ACPR —–60 —dBc
Modulation Spectrum @ 600 kHz ACPR —–75 —dBc
Gain Gps —18 —dB
Drain Efficiency ηD—44 —%
PTFA080551F
Package H-37265-2
*See Infineon distributor for future availability.
Features
•Broadband internal matching
•Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
•Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
•Pb-free and RoHS compliant
Data Sheet 2 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 18.5 —dB
Drain Efficiency ηD46.5 48 —%
Intermodulation Distortion IMD —–31 –29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.15 —V
Operating Gate Voltage VDS = 28 V, IDQ = 450 mA VGS 2.0 2.3 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD219 W
Above 25°C derate by 1.25 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RθJC 0.8 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA080551E V4 H-36265-2 Thermally-enhanced, Tray PTFA080551E
slotted flange, single-ended
PTFA080551F V4 H-37265-2 Thermally-enhanced, Tray PTFA080551F
earless flange, single-ended
*See Infineon distributor for future availability.
Data Sheet 3 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Edge EVM and Modulation Spectrum
vs. Quiescent Current
VDD = 28 V, ƒ = 959.8 MHz, POUT = 22 W
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
0.35 0.40 0.45 0.50 0.55 0.60
Quiescent Current (A)
EVM RMS (avg. %) .
-90
-80
-70
-60
-50
-40
-30
-20
Modulation Spectrum (dBc)
EVM
400 kHz
600 kHz
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz
-100
-80
-60
-40
-20
0
32 34 36 38 40 42 44 46
Output Power (dBm)
Modulation Spectrum (dBc)
5
15
25
35
45
55
Drain Efficiency (%)
Efficiency
400 kHz
600 kHz
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 450 mA, ƒ1 = 959 MHz, ƒ2 = 960 MHz
-70
-60
-50
-40
-30
-20
30 33 36 39 42 45 48
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th
5th
EDGE EVM Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 959.8 MHz
0
2
4
6
8
10
32 34 36 38 40 42 44 46
Output Power (dBm)
EVM RMS (avg. %) .
5
15
25
35
45
55
Drain Efficiency (%)
EVM
Efficiency
Data Sheet 4 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 600 mA, ƒ = 960 MHz
14
15
16
17
18
19
20
21
36 38 40 42 44 46 48 50
Output Power (dBm)
Gain (dB)
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
Power Sweep
VDD = 28 V, ƒ = 960 MHz
15
16
17
18
19
36 38 40 42 44 46 48 50
Output Power (dBm)
Power Gain (dB)
IDQ = 600 mA
IDQ = 300 mA
IDQ = 450 mA
Linear Broadband Performance
VDD = 28 V, IDQ = 600 mA, POUT Avg = 44.39 dBm
44
45
46
47
48
49
50
51
860 880 900 920 940 960
Frequency (MHz)
Efficiency (%)
-30
-20
-10
0
10
20
30
40
Gain, Return Loss (dB)
Gain
Return Loss
Efficiency
IM3 vs. Output Power at Selected Biases
VDD = 28 V, ƒ1 = 959, ƒ2 = 960 MHz
-60
-50
-40
-30
-20
29 31 33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
IMD (dBc)
300 mA 600 mA
450 mA
Typical Performance (cont.)
Data Sheet 5 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.778 A
1.55 A
3.11 A
3.88 A
4.66 A
5.44 A
6.22 A
7.00 A
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz
0
5
10
15
20
25
30
35
40
45
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Drain Efficiency (%)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
Adj. Ch. Power Ratio (dBc)
Efficiency
ACPR FC + 1.98 MHz
ACP FC – 0.75 MHz
TCASE = 25°C
TCASE = 90°C
Output Power (P–1dB) vs. Drain Voltage
IDQ = 600 mA, ƒ = 960 MHz
45
46
47
48
49
50
51
24 26 28 30 32
Drain Voltage (V)
Output Power (dBm)
Typical Performance (cont.)
Data Sheet 6 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
869 8.91 –10.93 7.42 –1.63
880 3.72 –8.28 4.65 –1.74
894 5.93 –5.43 4.61 0.16
920 4.87 –7.16 4.88 –0.59
960 6.05 –5.57 4.89 0.86
See next page for circuit information
Data Sheet 7 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
a08 055 1ef_sch_06 -03 -13
RF_OUT
R3
2K VR4
2K V
R2
1.3K V
LM7805
QQ1
C1
0.001µF
VDD
C2
0.001µF
BCP56
Q1
C3
0.001µF
R1
1.2K V
R5
5.1 V
C9
33pF
l1
l6
l7
R8
10 V
DUT
C5
0.1µF
C4
10µF
35V
C6
0.1µF
C8
33pF
R7
5.1K
R6
10 V
C10
3.3pF
C11
1.0pF
l2l3l4
C7
0.01µF
l5
VDD
L1
L2
C12
33pF
C14
10µF
50V
C13
1µF
C16
10µF
50V
C23
33pF
C17
33µF
C18
1µF
C19
10µF
50V
C21
10µF
50V
C20
0.1µF
C15
0.1µF
C22
0.3pF
l8l9l10 l11RF_IN
Reference Circuit
Reference circuit schematic diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT PTFA080551E or PTFA080551F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 960 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.070 λ, 50.0 Ω12.19 x 1.37 0.480 x 0.054
l20.122 λ, 50.0 Ω20.93 x 1.37 0.824 x 0.054
l30.031 λ, 50.0 Ω 5.31 x 1.37 0.209 x 0.054
l40.063 λ, 7.5 Ω 9.58 x 16.21 0.377 x 0.638
l50.162 λ, 67.0 Ω28.45 x 0.79 1.120 x 0.031
l6, l70.150 λ, 55.0 Ω25.65 x 1.17 1.010 x 0.046
l80.198 λ, 11.1 Ω30.73 x 10.46 1.210 x 0.412
l90.145 λ, 38.0 Ω24.21 x 2.16 0.953 x 0.085
l10 0.009 λ, 38.0 Ω 1.52 x 2.16 0.060 x 0.085
l11 0.026 λ, 50.0 Ω 4.50 x 1.37 0.177 x 0.054
1Electrical characteristics are rounded.
Data Sheet 8 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C6, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C8, C9, C12, C17, Ceramic capacitor, 33 pF ATC 100B 330
C23
C7 Capacitor, 0.01 µF ATC 200B 103
C10 Ceramic capacitor, 3.3 pF ATC 100B 3R3
C11 Ceramic capacitor, 1.0 pF ATC 100B 1R0
C13, C18 Capacitor, 1.0 µF ATC 920C105
C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C22 Ceramic capacitor, 0.3 pF ATC 100B 0R3
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R6, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
*Gerber Files for this circuit available on request
A080551in_01 A080551out_01 a080551ef_assy-06-03-14
C13
C18
C22 C23
C14
C12
C17
R4
Q1
QQ1
C3 C1
R1 C2
R2
R5 R3
C4
C5
C8 C7
C6 R8
R6
C9 C10
C11
R7
C19
L2
L1
C21
C16
C20
C15
Data Sheet 9 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
C
L
L
C
D
G
S
0.0381 [.0015] -A-
2X 7.11
[.280]
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
FLANGE
9.78
[.385]
15.23
[.600]
4X R1.52
[R.060]
2X R1.52
[R.060]
45° X 2.03
[.080]
2.66±.51
[.105±.020]
20.31
[.800]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
SPH 1.57
[.062]
6.
6. ALL FOUR
CORNERS
4X R0.63
[R.025] MAX
C66065-A2326-C001-01-0027 H-36265-2.dwg
3.05
[.120]
1.02
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. Exposed metal plane on top and bottom of ceramic insulator.
7. All tolerances ± 0.1 [.025] / ± 0.127 [.005] unless specified otherwise.
Package Outline Specifications
Package H-36265-2
Data Sheet 10 of 11 Rev. 03, 2008-10-22
PTFA080551E
PTFA080551F
Confidential, Limited Internal Distribution
C
L
L
C
D
G
0.0381 [.0015] -A-
2X 7.11
[.280]
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
FLANGE
10.16
[.400]
45° X 2.03
[.080]
2.66±.51
[.105±.020]
10.16
[.400]
10.16±.25
[.400±.010]
3.61±.38
[.142±.015]
SPH 1.57
[.062]
6. ALL FOUR
CORNERS
4X R0.63
[R.025] MAX
C66065-A2327-C001-01-0027 H-37265-2.dwg
1.02
[.040] S
Package Outline Specifications (cont.)
Package H-37265-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. Exposed metal plane on top and bottom of ceramic insulator.
7. All tolerances ± 0.1 [.025] / ± 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 11 of 11 Rev. 03, 2008-10-22
PTFA080551E/F
Confidential, Limited Internal Distribution
Revision History: 2008-10-22 Data Sheet
Previous Version: 2008-10-14, Data Sheet
Page Subjects (major changes since last revision)
5Remeasure Voltage vs. Temperature
9, 10 Update package outline diagrams and information
11 Update company information.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-10-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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