1
Subject to change without notice.
www.cree.com
FEATURES
Low Wavelength Variation
461-465 nm at 10 mA
High Performance
0.85 mW (463 nm)
Superior SiC Substrate Technology
Excellent Chip-to-Chip Consistency
High Reliability
Single Wire Bond Structure
Class 2 ESD Rating
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APPLICATIONS
Automotive Applications
Dashboard Lighting
Interior Lighting
Toggle Switch Lighting
Electronic Signs and Displays
Indicator Lights
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SuperBlue™ Generation II LEDs
Preliminary Data Sheet
C430CB230-S2100
Cree’s low-current SuperBlue Generation II LEDs combine highly efcient GaN with Cree’s proprietary G•SiC®
substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive
applications or any application where wavelength stability and chip robustness are critical.
C430CB230-S2100 Chip Diagram
Data Sheet: CPR3DM Rev. -
Top View Bottom View
200 x 200 μm
SiC Substrate
t = 250 μm
Backside
Metallization
Gold Bond Pad
114 μm Diameter
Die Cross Section
Cathode (-)
Anode (+)
Mesa (junction)
180 x 180 μm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
2CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 C430CB230-S2100
DC Forward Current 15 mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 35 mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -40°C to +100°C
Storage Temperature Range -40°C to +100°C
Electrostatic Discharge Threshold (HBM)Note 2 1000 V
Electrostatic Discharge Classication (MIL-STD-883E)Note 2 Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 10 mA Note 3
Part Number
Forward
Voltage
(Vf, V)
Radiant Flux
(P, mW)
Reverse
Current
[I(Vr=5V), μA]
Peak
Wavelength
(λd, nm)
Dominant
Wavelength
(λd, nm)
Full Width
Half Max
(λD, nm)
Typ. Max. Min. Typ. Max. Typ. Min. Typ. Max. Typ.
C430CB230-S2100 4.0 4.5 0.425 0.80 10 423 461 463 465 59
Mechanical Specications C430CB230-S0100
Description Dimension Tolerance
P-N Junction Area (μm 2) 180 x 180 ± 35
Top Area (μm 2) 200 x 200 ± 35
Bottom Area (μm 2) 200 x 200 ± 35
Chip Thickness (μm) 250 ± 25
Au Bond Pad Diameter (μm) 114 ± 20
Au Bond Pad Thickness (μm) 1.1 ± 0.5
Back Contact Metal Diameter (μm) 114 ± 20
Notes:
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specic package to determine limitations. Assembly processing
temperature must not exceed 325°C (<5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classication
of Class II is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specications for electrical and optical characteristics, when assembled
and operated at 10 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance A.
1.
2.
3.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
3CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the CB230 LED product. Actual curves will vary slightly for the various
radiant ux and dominant wavelength bins.
Wavelength Shift vs Forward Current
-1.00
-0.50
0.00
0.50
1.00
0 5 10 15 20 25
If (mA)
Shift (nm)
Forward Current vs Forward Voltage
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
0.0 1.0 2.0 3.0 4.0 5.0
Vf (V)
If (mA)
Wavelength Shift vs Forward Current
-1.00
-0.50
0.00
0.50
1.00
0 5 10 15 20 25
If (mA)
Shift (nm)
Forward Current vs Forward Voltage
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
0.0 1.0 2.0 3.0 4.0 5.0
Vf (V)
If (mA)
Relative Intensity vs Forward Voltage
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
0 5 10 15 20 25
If (mA)
% Relative Intensity
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.
4CPR3DM Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the CB230 LED product. Actual patterns will vary slightly for each chip.