TLP127
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© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP127
Programmable Controllers
DC-Output Module
Telecommunication
The TOSH IBA mini-flat coupler TLP127 is a small outline coupler, suitable for
surfa ce mount asse mbly.
TLP127 consists of an infrared emitting diode, optically coupled to a
Darlington phot o tran si stor with an integral base-emitter resistor.
• Collector-emitter voltage : 300 V (min)
• Current transfer ratio : 1000 % (min)
• Isolation voltage : 250 0 Vrms (min)
• UL-recognized : UL 1577, File No. E67349
• cUL-recognized : CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved : EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed, please designate the Option (V4).
Pin Configurations (top view)
TOSHIBA
11-4C1
Weight : 0.09 g (typ.)
Unit: mm
1: ANODE
3: CATHODE
4: EMITTER
6: COLLECTOR
4
3
1
Start of commercial production
1988-04
TLP127
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current
IF
50
mA
Forward current derati ng
(Ta ≥ 53°C)
ΔIF/°C -0.7 mA/°C
Pulse forward current
(100 μs pulse, 100 pps)
IFP 1 A
Reverse voltage
VR
5
V
Diode power dissipat i on
PD
100
mW
Diode power dissipat i on derating
(Ta ≥ 53°C)
ΔPD/°C -1.39 mW/°C
Junction temperature
Tj
125
°C
Detector
Collector-emitt er voltage
VCEO
300
V
Emitter-collector voltage
VECO
0.3
V
Collector current
IC
150
mA
Collect or power dissipat i on
PC
150
mW
Collect or power dissipat i on derating
(Ta ≥ 25°C)
ΔPC/°C -1.5 mW/°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55 to 125
°C
Operating tem perature range
Topr
-55 to 100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Total package power dissi pation
PT
200
mW
Total package power dissi pation derating
(Ta ≥ 25°C)
ΔPT/°C -2.0 mW/°C
Isolation voltage
(AC, 60 s, R.H.≤ 60 %) (Note 1)
BVS 2500 Vrms
Note: U sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. relia bil ity test
report and estimated failure rate, etc.).
Note 1: Devi ce con sid ered a t w o termina l device: Pi ns 1, 3 shorted tog et her and pin s 4, 6 shor ted tog ether .
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― ― 200 V
Forward current IF ― 16 25 mA
Collector current IC ― ― 120 mA
Operating tem perature Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP127
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V ― ― 10 μA
Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF
Detector
Collector-emitter breakdown voltage V(BR)CEO IC = 0.1 mA 300 ― ― V
Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 0.3 ― ― V
Collector dark current ICEO VCE = 200 V ― 10 200 nA
VCE = 200 V, Ta = 85 °C ― ― 20 μA
Capacitance collector to emitter CCE V = 0 V, f = 1 MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transf er ratio IC/IF IF = 1 mA, VCE = 1 V 1000 4000 ― %
Saturated CTR IC/IF(sat) IF = 10 mA, VCE = 1 V 500 ― ― %
Collector-emitter saturation voltage VCE(sat) IC = 10 mA , IF = 1 mA ― ― 1.0 V
IC = 100 mA, IF = 10 mA 0.3 ― 1.2
Off-state collector current IC(off) VF = 0.7 V, VCE = 200 V ― ― 20 μA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance (input to output) CS VS = 0 V, f = 1 MHz ― 0.8 ― pF
Isolation resist ance RS VS = 500 V, R.H.≤ 60 % 5×1010
1014 ― Ω
Isolation voltage BVS AC, 60 s 2500 ― ― Vrms
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 1 0 V , IC = 10 mA
RL = 100 Ω
― 40 ―
μs
Fall time tf ― 15 ―
Turn-on time ton ― 50 ―
Turn-off time toff ― 15 ―
Turn-on time tON RL = 180 Ω (Fig.1)
VCC = 1 0 V , IF = 16 mA
― 5 ―
μs
Storage time ts ― 40 ―
Turn-off time tOFF ― 80 ―
Fig.1: Switching time test circuit
IF
VCC
VCE
R
L
V
CC
VCE
I
F
tON
tOFF
ts
9V
1V
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Toshiba Electronic Devices & Storage Corporation
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
0
100
-20
80
60
40
20
0 20 40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Collector power dissipation
PC (mW)
200
0
-20
160
120
80
40
0 20 40 60 80 120 100
ΔVF / ΔTa – IF
Forward current I
F
(mA)
Forward voltage temperature
coefficient
ΔVF / ΔTa (mV / °C)
-3.2
-0.4
0.1
-0.8
-2.8
-2.0
-1.6
-1.2
0.3
-2.4
1 5 50 0.5 3 10 30
IFP – DR
Duty c ycl e r atio D
R
Pulse forward
current IFP (mA)
3000
10
30
1000
300
100
50
10
-3
500
10
-2
10
-1
100
Pulse width ≤ 100μs
Ta = 25°C
IF – VF
Forward voltage V
F
(V)
Forward current I
F (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 25°C
IFP – VFP
Pulse forward voltage V
FP
(V)
Pulse forward current I
FP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 25°C
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
Collector–emitt er voltage V
CE
(V)
IC – VCE
Collector current I
C (mA)
0
160
0.4
120
80
40
0.8 1.2 1.6 2.0
1mA
2mA
4mA
10mA
Ta = 25°C
IF
= 0.5mA
Load resistanc e R
L
(kΩ)
Switching Time – RL
Switching time
(μs)
1000
1
50
10
500
100
30
300
300
3k 10k 1k 5k
3
5
100
50
500
tOFF(IF = 16mA)
tOFF(IF = 1.6mA)
tON(IF = 1.6mA)
tON(IF = 16 mA)
Ta = 25°C
VCC = 10V
IC – IF
Forward current I
F
(mA)
Collector current I
C (mA)
300
1
0.5
100
10
1 3 10 30 100
30
50
3
5
5 50
Sample A
Sample B
Ta = 25°C
VCE = 1.2V
VCE = 1V
IC / IF – IF
Forward current I
F
(mA)
Current transf er ratio I
C / IF (%)
10000
100
0.3 0.5 3 5 10 30 50
5000
1000
500
300
1
3000
Ta = 25°C
VCE = 1.2V
VCE = 1V
Sample B
Sample A
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP127
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Toshiba Electronic Devices & Storage Corporation
ICEO – Ta
Ambient temperature Ta (°C)
Collector dark current ICEO (μA)
10
1
10
-4
0 20 40 60 100 80
10
-1
10
0
10
-2
10
-3
VCE
= 200V
150V
80V
IC – Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
120
0
-20
80
0 20 40 60 80 100
100
60
40
20
-40
IF
= 10mA
1mA
VCE = 1V
VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
1.2
0
0.4
1.0
0.8
0.6
0.2
-20 0 20 40 60 80 100 -40
IF = 1mA
IC = 10mA
NOTE: The above characteristics c urves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP127
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Toshiba Electronic Devices & Storage Corporation
RESTRICTIONS ON PRODUCT USE
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