HY5DU28422ET HY5DU28822ET HY5DU281622ET 128Mb DDR SDRAM HY5DU28422ET HY5DU28822ET HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 /Apr. 2006 HY5DU28422ET HY5DU28822ET HY5DU281622ET Revision History Revision No. History Draft Date 0.1 Define Preliminary Specification Sep. 2003 0.2 Insert CL3 in Speed Grade(-J) Oct. 2003 0.3 Editorial Changes Jul. 2004 0.4 1) Changed Document Title from 128M to 128Mb 2) Changed Parameter name from Ambient Temperature to Operating Temperature in ABSOLUTE MAXIMUM RATINGS 3) Updated High, Low Current Level of Output Driver Strength in DC OPERATING CONDITIONS 4) Corrected 6th note and Added 7th note in DC OPERATING CONDITIONS 5) Editorial Changes Aug. 2004 0.5 State Diagram modified Apr. 2006 Rev. 0.5 /Apr. 2006 Remark 2 HY5DU28422ET HY5DU28822ET HY5DU281622ET DESCRIPTION The Hynix HY5DU28422ET, HY5DU28822ET and HY5DU281622ET are a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. FEATURES * VDD, VDDQ = 2.5V +/- 0.2V * All inputs and outputs are compatible with SSTL_2 interface * Fully differential clock inputs (CK, /CK) operation * Double data rate interface * Source synchronous - data transaction aligned to bidirectional data strobe (DQS) * Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) * All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock * Programmable /CAS latency 2 / 2.5 / 3 supported * Programmable burst length 2 / 4 / 8 with both sequential and interleave mode * Internal four bank operations with single pulsed /RAS * Auto refresh and self refresh supported * 4096 refresh cycles / 64ms * On chip DLL align DQ and DQS transition with CK transition * JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch * DM mask write data-in at the both rising and falling edges of the data strobe * Full and Half strength driver option controlled by EMRS * tRAS Lock-out function supported ORDERING INFORMATION Part No. Configuration HY5DU28422ET-X* 32Mx4 HY5DU28822ET-X* 16Mx8 HY5DU281622ET-X* 8Mx16 * X means speed grade Rev. 0.5 / Apr. 2006 OPERATING FREQUENCY PACKAGE 400mil 66pin TSOP-II Remark (CL-tRCD-tRP) Grade CL2 CL2.5 CL3 -J 133MHz 166MHz 166MHz -M 133MHz 133MHz - DDR266 (2-2-2) -K 133MHz 133MHz - DDR266A (2-3-3) -H 100MHz 133MHz - DDR266B (2.5-3-3) -L 100MHz 125MHz - DDR200 (2-2-2) DDR333 (2.5-3-3) / 166MHz (3-3-3) 3 HY5DU28422ET HY5DU28822ET HY5DU281622ET PIN CONFIGURATION(TSOP) x4 x8 VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD x16 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 400mil X 875mil 66pin TSOP -II 0.65mm pin pitch 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 x16 x8 x4 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM /CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM /CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC VSSQ DQS NC VREF VSS DM /CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS ROW AND COLUMN ADDRESS TABLE ITEMS 32Mx4 16Mx8 8Mx16 Organization 8M x 4 x 4banks 4M x 8 x 4banks 2M x 16 x 4banks Row Address A0 - A11 A0 - A11 A0 - A11 Column Address A0-A9, A11 A0-A9 A0-A8 Bank Address BA0, BA1 BA0, BA1 BA0, BA1 Auto Precharge Flag A10 A10 A10 Refresh 4K 4K 4K Rev. 0.5 /Apr. 2006 4 HY5DU28422ET HY5DU28822ET HY5DU281622ET PIN DESCRIPTION PIN TYPE CK, /CK Input Clock: CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). CKE Input Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. /CS Input Chip Select: Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All commands are masked when CS is registered high. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied. A0 ~ A11 Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). /RAS, /CAS, /WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being entered. DM (LDM, UDM) Input Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corresponds to the data on DQ8-Q15. DQS (LDQS, UDQS) I/O Data Strobe: Output with read data, input with write data. Edge aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15. DQ I/O Data input / output pin: Data bus VDD/VSS Supply Power supply for internal circuits and input buffers. VDDQ/VSSQ Supply Power supply for output buffers for noise immunity. VREF Supply Reference voltage for inputs for SSTL interface. NC NC Rev. 0.5 /Apr. 2006 DESCRIPTION No connection. 5 HY5DU28422ET HY5DU28822ET HY5DU281622ET FUNCTIONAL BLOCK DIAGRAM (32Mx4) 4Banks x 8Mbit x 4 I/O Double Data Rate Synchronous DRAM Input Buffer 4 Write Data Register 2-bit Prefetch Unit 8 8Mx4/Bank0 8Mx4/Bank2 8 8Mx4/Bank3 Mode Register 4 Output Buffer 8Mx4/Bank1 Command Decoder 2-bit Prefetch Unit Bank Control Sense AMP CLK /CLK CKE /CS /RAS /CAS /WE DM DS DQ [0:3] Row Decoder Column Decoder ADD BA0, BA1 DQS Address Buffer Column Address Counter CLK_DLL DS CLK /CLK Data Strobe Transmitter Data Strobe Receiver DLL Block Mode Register Rev. 0.5 /Apr. 2006 6 HY5DU28422ET HY5DU28822ET HY5DU281622ET FUNCTIONAL BLOCK DIAGRAM (16Mx8) 4Banks x 4Mbit x 8 I/O Double Data Rate Synchronous DRAM Input Buffer 8 Write Data Register 2-bit Prefetch Unit 16 4Mx8/Bank0 4Mx8/Bank2 16 4Mx8/Bank3 Mode Register 8 Output Buffer 4Mx8/Bank1 Command Decoder 2-bit Prefetch Unit Bank Control Sense AMP CLK /CLK CKE /CS /RAS /CAS /WE DM DS DQ [0:7] Row Decoder Column Decoder ADD BA0,BA1 DQS Address Buffer Column Address Counter CLK_DLL DS CLK /CLK Data Strobe Transmitter Data Strobe Receiver DLL Block Mode Register Rev. 0.5 /Apr. 2006 7 HY5DU28422ET HY5DU28822ET HY5DU281622ET FUNCTIONAL BLOCK DIAGRAM (8Mx16) 4Banks x 2Mbit x 16 I/O Double Data Rate Synchronous DRAM Input Buffer 16 Write Data Register 2-bit Prefetch Unit 32 2Mx16/Bank0 2Mx16/Bank2 32 2Mx16/Bank3 Mode Register 16 Output Buffer 2Mx16/Bank1 Command Decoder 2-bit Prefetch Unit Bank Control Sense AMP CLK /CLK CKE /CS /RAS /CAS /WE LDM UDM DS DQ[0:15] Row Decoder Column Decoder ADD BA0, BA1 LDQS, UDQS Address Buffer Column Address Counter CLK_DLL LDQS UDQS CLK /CLK Data Strobe Transmitter Data Strobe Receiver DLL Block Mode Register Rev. 0.5 /Apr. 2006 8 HY5DU28422ET HY5DU28822ET HY5DU281622ET SIMPLIFIED COMMAND TRUTH TABLE A10/ AP Command CKEn-1 CKEn CS RAS CAS WE Extended Mode Register Set H X L L L L OP code 1,2 Mode Register Set H X L L L L OP code 1,2 H X H X X X L H H H X 1 H X L L H H H X L H L H CA H X L H L L CA H X L L H L X Read Burst Stop H X L H H L X 1 Auto Refresh H H L L L H X 1 Entry H L L L L H Exit L H H X X X L H H H Entry H L H X X X L H H H H X X X L H H H 1 H X X X 1 L V V V Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Self Refresh Precharge Power Down Mode Active Power Down Mode Exit L H Entry H L Exit L H X ADDR RA BA V L H L H V V Note 1 1 1,3 1 1,4 H X 1,5 L V 1 1 X 1 1 X X 1 1 1 1 ( H=Logic High Level, L=Logic Low Level, X=Don't Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation ) Note: 1. LDM/UDM states are Don't Care. Refer to below Write Mask Truth Table. 2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from Precharge command. 3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+tRP). 4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Precharge delay(tDPL) which is also called Write Recovery Time (tWR) is needed to guarantee that the last data has been completely written. 5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged. Rev. 0.5 /Apr. 2006 9 HY5DU28422ET HY5DU28822ET HY5DU281622ET WRITE MASK TRUTH TABLE Function CKEn-1 CKEn /CS, /RAS, /CAS, /WE DM ADDR A10/AP BA Note Data Write H X X L X 1 Data-In Mask H X X H X 1 Note: 1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data. In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively. Rev. 0.5 /Apr. 2006 10 HY5DU28422ET HY5DU28822ET HY5DU281622ET OPERATION COMMAND TRUTH TABLE-I Current State /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP or power down3 L H H H X NOP NOP or power down3 L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4 L L H H BA, RA ACT Row Activation L L H L BA, AP PRE/PALL NOP L L L H X AREF/SREF Auto Refresh or Self Refresh5 L L L L OPCODE MRS Mode Register Set H X X X X DSEL NOP L H H H X NOP NOP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Begin read: optional AP6 L H L L BA, CA, AP WRITE/WRITEAP Begin write: optional AP6 L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Precharge7 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST Terminate burst L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8 L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP IDLE ROW ACTIVE READ WRITE Rev. 0.5 /Apr. 2006 11 HY5DU28422ET HY5DU28822ET HY5DU281622ET OPERATION COMMAND TRUTH TABLE-II Current State /CS /RAS /CAS /WE Address Command Action L L H H BA, RA ACT ILLEGAL4 L L H L BA, AP PRE/PALL Term burst, precharge L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL Continue burst to end WRITE READ WITH AUTOPRECHARGE L H H H X NOP Continue burst to end L H H L X BST ILLEGAL L H L H BA, CA, AP READ/READAP ILLEGAL10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP-Enter IDLE after tRP L H H H X NOP NOP-Enter IDLE after tRP L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 WRITE AUTOPRECHARGE PRECHARGE Rev. 0.5 /Apr. 2006 12 HY5DU28422ET HY5DU28822ET HY5DU281622ET OPERATION COMMAND TRUTH TABLE-III Current State /CS /RAS /CAS /WE Address Command Action H X X X X DSEL NOP - Enter ROW ACT after tRCD L H H H X NOP NOP - Enter ROW ACT after tRCD L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,9,10 L L H L BA, AP PRE/PALL ILLEGAL4,10 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter ROW ACT after tWR L H H H X NOP NOP - Enter ROW ACT after tWR L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter precharge after tDPL L H H H X NOP NOP - Enter precharge after tDPL L H H L X BST ILLEGAL4 L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10 L L H H BA, RA ACT ILLEGAL4,10 L L H L BA, AP PRE/PALL ILLEGAL4,11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 ROW ACTIVATING WRITE RECOVERING WRITE RECOVERING WITH AUTOPRECHARGE H X X X X DSEL NOP - Enter IDLE after tRC L H H H X NOP NOP - Enter IDLE after tRC L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 REFRESHING Rev. 0.5 /Apr. 2006 13 HY5DU28422ET HY5DU28822ET HY5DU281622ET OPERATION COMMAND TRUTH TABLE-IV Current State /CS /RAS /CAS /WE Address Command Action L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 H X X X X DSEL NOP - Enter IDLE after tMRD L H H H X NOP NOP - Enter IDLE after tMRD L H H L X BST ILLEGAL11 L H L H BA, CA, AP READ/READAP ILLEGAL11 L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11 L L H H BA, RA ACT ILLEGAL11 L L H L BA, AP PRE/PALL ILLEGAL11 L L L H X AREF/SREF ILLEGAL11 L L L L OPCODE MRS ILLEGAL11 WRITE MODE REGISTER ACCESSING Note: 1. H - Logic High Level, L - Logic Low Level, X - Don't Care, V - Valid Data Input, BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation. 2. All entries assume that CKE was active(high level) during the preceding clock cycle. 3. If both banks are idle and CKE is inactive(low level), then in power down mode. 4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of that bank. 5. If both banks are idle and CKE is inactive(low level), then self refresh mode. 6. Illegal if tRCD is not met. 7. Illegal if tRAS is not met. 8. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 9. Illegal if tRRD is not met. 10. Illegal for single bank, but legal for other banks in multi-bank devices. 11. Illegal for all banks. Rev. 0.5 /Apr. 2006 14 HY5DU28422ET HY5DU28822ET HY5DU281622ET CKE FUNCTION TRUTH TABLE Current State SELF REFRESH1 POWER DOWN2 ALL BANKS IDLE4 ANY STATE OTHER THAN ABOVE CKEn1 CKEn /CS /RAS /CAS /WE /ADD Action H X X X X X X INVALID L H H X X X X Exit self refresh, enter idle after tSREX L H L H H H X Exit self refresh, enter idle after tSREX L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue self refresh H X X X X X X INVALID L H H X X X X Exit power down, enter idle L H L H H H X Exit power down, enter idle L H L H H L X ILLEGAL L H L H L X X ILLEGAL L H L L X X X ILLEGAL L L X X X X X NOP, continue power down mode H H X X X X X See operation command truth table H L L L L H X Enter self refresh H L H X X X X Exit power down H L L H H H X Exit power down H L L H H L X ILLEGAL H L L H L X X ILLEGAL H L L L H X X ILLEGAL H L L L L L X ILLEGAL L L X X X X X NOP H H X X X X X See operation command truth table H L X X X X X ILLEGAL5 L H X X X X X INVALID L L X X X X X INVALID Note: When CKE=L, all DQ and DQS must be in Hi-Z state. 1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command. 2. All command can be stored after 2 clocks from low to high transition of CKE. 3. Illegal if CLK is suspended or stopped during the power down mode. 4. Self refresh can be entered only from the all banks idle state. 5. Disabling CLK may cause malfunction of any bank which is in active state. Rev. 0.5 /Apr. 2006 15 HY5DU28422ET HY5DU28822ET HY5DU281622ET SIMPLIFIED STATE DIAGRAM Pow er A p p lie d Pow er On P re c h a rg e PREALL S e lf R e fre s h REFS REFSX MRS MRS EM RS REFA Id le A u to R e fre s h CKEL CKEH A c t iv e Power Down P re c h a rg e Pow er Down ACT CKEH CKEL B u rs t S to p Row A c t iv e W r it e Read W r it e Read W r ite A Read A W r it e Read Read W r it e A Read A Read A W r it e A Read A PRE PRE PRE PRE P re c h a rg e PR EALL A u t o m a t ic S e q u e n c e Com m and Sequence P R E A L L = P r e c h a r g e A ll B a n k s M R S = M o d e R e g is t e r S e t E M R S = E x t e n d e d M o d e R e g is t e r Set R E F S = E n t e r S e lf R e f r e s h R E F S X = E x it S e lf R e f r e s h R E F A = A u to R e f r e s h Rev. 0.5 /Apr. 2006 C K E L = E n te r P o w e r D o w n C K E H = E x it P o w e r D o w n A C T = A c tiv e W r ite A = W r it e w it h A u t o p r e c h a r g e R e a d A = R e a d w ith A u t o p r e c h a r g e P R E = P re c h a rg e 16 HY5DU28422ET HY5DU28822ET HY5DU281622ET POWER-UP SEQUENCE AND DEVICE INITIALIZATION DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF (and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent damage to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT. Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200us delay prior to applying an executable command. Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Register set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. 1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVCMOS low state. (All the other input pins may be undefined.) * VDD and VDDQ are driven from a single power converter output. * VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation. * VREF tracks VDDQ/2. * A minimum resistance of 42 Ohms (22 ohm series resistor + 22 ohm parallel resistor - 5% tolerance) limits the input current from the VTT supply into any pin. * If the above criteria cannot be met by the system design, then the following sequencing and voltage relationship must be adhered to during power up. Voltage description Sequencing Voltage relationship to avoid latch-up VDDQ After or with VDD < VDD + 0.3V VTT After or with VDDQ < VDDQ + 0.3V VREF After or with VDDQ < VDDQ + 0.3V 2. Start clock and maintain stable clock for a minimum of 200usec. 3. After stable power and clock, apply NOP condition and take CKE high. 4. Issue Extended Mode Register Set (EMRS) to enable DLL. 5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200 cycles(tXSRD) of clock are required for locking DLL) 6. Issue Precharge commands for all banks of the device. Rev. 0.5 /Apr. 2006 17 HY5DU28422ET HY5DU28822ET HY5DU281622ET 7. Issue 2 or more Auto Refresh commands. 8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low. Power-Up Sequence VDD VDDQ tVTD VTT VREF /CLK CLK tIS tIH CKE LVCMOS Low Level CMD NOP PRE EMRS MRS ADDR CODE A10 BA0, BA1 NOP PRE AREF MRS ACT RD CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE CODE Non-Read Command READ DM DQS DQ'S T=200usec tRP tMRD tMRD tRP tRFC tMRD tXSRD* Power UP VDD and CK stable Precharge All EMRS Set MRS Set Reset DLL (with A8=H) Precharge All 2 or more Auto Refresh MRS Set (with A8=L) * 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command Rev. 0.5 /Apr. 2006 18 HY5DU28422ET HY5DU28822ET HY5DU281622ET MODE REGISTER SET (MRS) The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length, burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is issued by the low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is determined, the information will be held until reset by another MRS command. BA1 BA0 0 0 A12 A11 A10 A9 A8 A7 Operating Mode A6 A5 A4 CAS Latency A3 A2 BT A1 Burst Length BA0 MRS Type A6 A5 A4 CAS Latency A3 Burst Type 0 MRS 0 0 0 Reserved 0 Sequential 1 EMRS 0 0 1 Reserved 1 Interleave 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 1.5 1 1 0 2.5 1 1 1 Reserved A0 Burst Length A2 A1 A0 Sequential Interleave 0 0 0 Reserved Reserved 0 0 1 2 2 0 1 0 4 4 A12~A9 A8 A7 A6~A0 Operating Mode 0 1 1 8 8 0 0 0 Valid Normal Operation 1 0 0 Reserved Reserved 0 1 0 Valid Normal Operation/ Reset DLL 1 0 1 Reserved Reserved 0 0 1 VS Vendor specific Test Mode 1 1 0 Reserved Reserved - - - All other states reserved 1 1 1 Reserved Reserved Rev. 0.5 /Apr. 2006 19 HY5DU28422ET HY5DU28822ET HY5DU281622ET BURST DEFINITION Burst Length 2 4 8 Starting Address (A2,A1,A0) Sequential Interleave XX0 0, 1 0, 1 XX1 1, 0 1, 0 X00 0, 1, 2, 3 0, 1, 2, 3 X01 1, 2, 3, 0 1, 0, 3, 2 X10 2, 3, 0, 1 2, 3, 0, 1 X11 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5 011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1 111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0 BURST LENGTH & TYPE Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A 2 -Ai when the burst length is set to four and by A 3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both Read and Write bursts. Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Burst Definitionon Table Rev. 0.5 /Apr. 2006 20 HY5DU28422ET HY5DU28822ET HY5DU281622ET CAS LATENCY The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and the availability of the first burst of output data. The latency can be programmed 2 / 2.5 / 3 clocks. If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident with clock edge n + m. Reserved states should not be used as unknown operation or incompatibility with future versions may result. DLL RESET The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally applied clock before an any command can be issued. OUTPUT DRIVER IMPEDANCE CONTROL The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver and the half strength driver are included in this document. Rev. 0.5 /Apr. 2006 21 HY5DU28422ET HY5DU28822ET HY5DU281622ET EXTENDED MODE REGISTER SET (EMRS) The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits shown below. The Extended Mode Register is programmed via the Mode Register Set command (BA0=1 and BA1=0) and will retain the stored information until it is programmed again or the device loses power. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. BA1 BA0 0 1 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 Operating Mode BA0 MRS Type 0 MRS 1 EMRS An~A3 A2~A0 Operating Mode 0 Valid Normal Operation _ _ All other states reserved A2 A1 A0 0* DS DLL A0 DLL enable 0 Enable 1 Disable A1 Output Driver Impedance Control 0 Full Strength Driver 1 Half Strength Driver * This part do not support/QFC function, A2 must be programmed to Zero. Rev. 0.5 /Apr. 2006 22 HY5DU28422ET HY5DU28822ET HY5DU281622ET ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature (Ambient) Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Voltage on VDDQ relative to VSS Output Short Circuit Current Power Dissipation Soldering Temperature Time Symbol Rating TA 0 ~ 70 TSTG -55 ~ 125 oC VIN, VOUT -0.5 ~ 3.6 V VDD -0.5 ~ 3.6 V VDDQ -0.5 ~ 3.6 V IOS 50 mA PD 1 TSOLDER 260 10 Unit o C W o C sec Note: Operation at above absolute maximum rating can adversely affect device reliability DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V) Parameter Symbol Min Typ. Max Unit Power Supply Voltage VDD 2.3 2.5 2.7 V Power Supply Voltage VDDQ 2.3 2.5 2.7 V VIH VREF + 0.15 - VDDQ + 0.3 V Input High Voltage Input Low Voltage VIL -0.3 - VREF - 0.15 V Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V Reference Voltage Input Voltage Level, CK and CK inputs Input Differential Voltage, CK and CK inputs VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V VIN(DC) -0.3 - VDDQ+0.3 V Note 1 2 3 VID(DC) 0.36 - VDDQ+0.6 V 4 VI(RATIO) 0.71 - 1.4 - 5 Input Leakage Current ILI -2 - 2 uA 6 Output Leakage Current ILO -5 - 5 uA 7 IOH -16.8 - - mA IOL 16.8 - - mA IOH -13.6 - - mA IOL 13.6 - - mA V-I Matching: Pullup to Pulldown Current Ratio Normal Strength Output Driver (VOUT=VTT 0.84) Half Strength Output Driver (VOUT=VTT 0.68) Output High Current (min VDDQ, min VREF, min VTT) Output Low Current (min VDDQ, max VREF, max VTT) Output High Current (min VDDQ, min VREF, min VTT) Output Low Current (min VDDQ, max VREF, max VTT) Note: 1. VDDQ must not exceed the level of VDD. 2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration. 3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to peak noise on VREF may not exceed +/- 2% of the dc value. 4. VID is the magnitude of the difference between the input level on CK and the input level on /CK. 5. The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0. 6. VIN=0 to VDD, All other pins are not tested under VIN =0V. 7. DQs are disabled, VOUT=0 to VDDQ. Rev. 0.5 /Apr. 2006 23 HY5DU28422ET HY5DU28822ET HY5DU281622ET IDD SPECIFICATION AND CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V) 32Mx4 / 16Mx8 / 8Mx16 Parameter Symbol Test Condition Speed -J -M -K -H -L Unit Note IDD0 One bank; Active - Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 110 100 90 mA Operating Current IDD1 One bank; Active - Read - Precharge; Burst=2; tRC=tRC(min); tCK=tCK(min); address and control inputs changing once per clock cycle 110 100 90 mA Precharge Power Down Standby Current IDD2P All banks idle; Power down mode; CKE=Low, tCK=tCK(min) 20 15 15 mA Idle Standby Current IDD2F /CS=High, All banks idle; tCK=tCK(min); CKE=High; address and control inputs changing once per clock cycle. VIN=VREF for DQ, DQS and DM 50 45 40 mA Active Power Down Standby Current IDD3P One bank active; Power down mode; CKE=Low, tCK=tCK(min) 20 20 20 mA IDD3N /CS=HIGH; CKE=HIGH; One bank; ActivePrecharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle 60 50 40 mA IDD4R Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); IOUT=0mA 160 150 140 mA IDD4W Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock cycle; tCK=tCK(min); DQ, DM and DQS inputs changing twice per clock cycle 160 150 140 mA 180 170 160 mA 2 2 2 mA 250 230 200 mA Operating Current Active Standby Current Operating Current Operating Current Auto Refresh Current IDD5 tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh Self Refresh Current IDD6 CKE=<0.2V; External clock on; tCK=tCK(min) Operating Current Four Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the following page for detailed test condition Rev. 0.5 /Apr. 2006 24 HY5DU28422ET HY5DU28822ET HY5DU281622ET DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7 IDD1: Operating current: One bank operation 1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. lout = 0mA 2. Timing patterns - DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=2, tRCD = 2*tCK, tRAS = 5*tCK Read: A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing - DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=2, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing 50% of data changing at every burst - DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL=2, BL=2, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing 50% of data changing at every burst - DDR266(133Mhz, CL=2): tCK = 7.5ns, CL=2, BL=2, tRCD = 2*tCK, tRC = 8*tCK, tRAS = 6*tCK Read: A0 N R0 N N N P0 N A0 N - repeat the same timing with random address changing 50% of data changing at every burst - DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2, BL=2, tRCD = 3*tCK, tRC = 10*tCK, tRAS = 7*tCK Read: A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random address changing 50% of data changing at every burst Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP IDD7: Operating current: Four bank operation 1. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not changing. lout = 0mA 2. Timing patterns - DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with Autoprecharge Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing 50% of data changing at every burst - DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read with autoprecharge Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing 50% of data changing at every burst - DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing 50% of data changing at every burst - DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing 50% of data changing at every burst Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP Rev. 0.5 /Apr. 2006 25 HY5DU28422ET HY5DU28822ET HY5DU281622ET AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V) Parameter Symbol Min Max Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) Input Differential Voltage, CK and /CK inputs VID(AC) Input Crossing Point Voltage, CK and /CK inputs VIX(AC) Unit Note V VREF - 0.31 V 0.7 VDDQ + 0.6 V 1 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2 Note: 1. VID is the magnitude of the difference between the input level on CK and the input on /CK. 2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same. AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V) Parameter Value Unit Reference Voltage VDDQ x 0.5 V Termination Voltage VDDQ x 0.5 V AC Input High Level Voltage (VIH, min) VREF + 0.31 V AC Input Low Level Voltage (VIL, max) VREF - 0.31 V Input Timing Measurement Reference Level Voltage VREF V Output Timing Measurement Reference Level Voltage VTT V Input Signal maximum peak swing 1.5 V Input minimum Signal Slew Rate 1 V/ns Termination Resistor (RT) 50 Series Resistor (RS) 25 Output Load Capacitance for Access Time Measurement (CL) 30 pF Rev. 0.5 /Apr. 2006 26 HY5DU28422ET HY5DU28822ET HY5DU281622ET AC Overshoot/Undershoot Specification for Address and Control Pins This specification is intended for devices with no clamp protection and is guaranteed by design Specification Parameter DDR333 DDR200/266 Maximum peak amplitude allowed for overshoot (See Figure 1): 1.5V 1.5V Maximum peak amplitude allowed for undershoot (See Figure 1): 1.5V 1.5V The area between the overshoot signal and VDD must be less than or equal to (See Figure 1): 4.5V - ns 4.5V - ns The area between the undershoot signal and GND must be less than or equal to (See Figure 1): 4.5V - ns 4.5V - ns 5 Max. amplitude = 1.5V Overshoot 4 Volts(V) 3 VDD 2 Max. area = 4.5V-ns 1 0 GND -1 -2 Undershoot -3 0 1 2 3 4 5 6 Time(ns) Figure 1: Address and Control AC Overshoot and Undershoot Definition Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins Specification Parameter DDR333 DDR200/266 Maximum peak amplitude allowed for overshoot (See Figure 2): 1.2V 1.2V Maximum peak amplitude allowed for undershoot (See Figure 2): 1.2V 1.2V The area between the overshoot signal and VDD must be less than or equal to (See Figure 2): 2.4V - ns 2.4V - ns The area between the undershoot signal and GND must be less than or equal to (See Figure 2): 2.4V - ns 2.4V - ns 5 Max. amplitude = 1.2V Overshoot 4 Volts(V) 3 VDD 2 Max. area = 2.4V-ns 1 0 GND -1 -2 Undershoot -3 0 1 2 3 4 5 6 Time(ns) Figure 2: DQ/DM/DQS AC Overshoot and Undershoot Definition Rev. 0.5 /Apr. 2006 27 HY5DU28422ET HY5DU28822ET HY5DU281622ET AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) Parameter Symbol DDR333 <DDR333, DDR266(2-2-2)> DDR266(2-2-2) Min Max Min Max Unit Row Cycle Time tRC 60 - 60 - ns Auto Refresh Row Cycle Time tRFC 72 - 75 - ns Row Active Time tRAS 42 70K 45 120K ns Active to Read with Auto Precharge Delay tRAP 18 - 15 - ns Row Address to Column Address Delay tRCD 18 - 15 - ns Row Active to Row Active Delay tRRD 12 - 15 - ns Column Address to Column Address Delay tCCD 1 - 1 - CK Row Precharge Time tRP 18 - 15 - ns Write Recovery Time tWR 15 - 15 - ns Write to Read Command Delay tWTR 1 - 1 - CK Auto Precharge Write Recovery + Precharge Time tDAL (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - CK 6 12 - - ns 6 12 7.5 12 ns 7.5 12 7.5 12 ns CL = 3 System Clock Cycle Time CL = 2.5 tCK CL = 2 Note 16 15 Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.7 0.7 -0.75 0.75 ns DQS-Out edge to Clock edge Skew tDQSCK -0.6 0.6 -0.75 0.75 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.45 - 0.5 ns Data-Out hold time from DQS tQH tHP -tQHS - tHP -tQHS - ns 1, 10 Clock Half Period tHP min (tCL,tCH) - min (tCL,tCH) - ns 1,9 Data Hold Skew Factor tQHS - 0.55 - 0.75 ns 10 Valid Data Output Window tDV tQH-tDQSQ Data-out high-impedance window from CK, /CK tHZ -0.7 0.7 -0.75 0.75 ns 17 Data-out low-impedance window from CK, /CK tLZ -0.7 0.7 -0.75 0.75 ns 17 Input Setup Time (fast slew rate) tIS 0.75 - 0.9 - ns 2,3,5,6 Input Hold Time (fast slew rate) tIH 0.75 - 0.9 - ns 2,3,5,6 Rev. 0.5 /Apr. 2006 tQH-tDQSQ ns 28 HY5DU28422ET HY5DU28822ET HY5DU281622ET Parameter Symbol DDR333 DDR266(2-2-2) Min Max Min Max Unit Note Input Setup Time (slow slew rate) tIS 0.8 - 1.0 - ns 2,4,5,6 Input Hold Time (slow slew rate) tIH 0.8 - 1.0 - ns 2,4,5,6 tIPW 2.2 ns 6 Write DQS High Level Width tDQSH 0.35 - 0.35 - CK Write DQS Low Level Width tDQSL 0.35 - 0.35 - CK Clock to First Rising edge of DQS-In tDQSS 0.75 1.25 0.72 1.28 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.45 - 0.5 - ns 6,7, 11~13 Data-in Hold Time to DQS-In (DQ & DM) tDH 0.45 - 0.5 - ns 6,7, 11~13 DQ & DM Input Pulse Width tDIPW 1.75 - 1.75 - ns Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - CK Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 2 - 2 - CK Exit Self Refresh to Any Execute Command tXSC 200 - 200 - CK Average Periodic Refresh Interval tREFI - 15.6 - 15.6 us Input Pulse Width Rev. 0.5 /Apr. 2006 2.2 8 29 HY5DU28422ET HY5DU28822ET HY5DU281622ET AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter Symbol DDR266A DDR266B <DDR266A/B, DDR200> DDR200 Min Max Min Max Min Max Unit Row Cycle Time tRC 65 - 65 - 70 - ns Auto Refresh Row Cycle Time tRFC 75 - 75 - 80 - ns Row Active Time tRAS 45 120K 45 120K 50 120k ns Active to Read with Auto Precharge Delay tRAP 20 - 20 - 20 - ns Row Address to Column Address Delay tRCD 20 - 20 - 20 - ns Row Active to Row Active Delay tRRD 15 - 15 - 15 - ns Column Address to Column Address Delay tCCD 1 - 1 - 1 - CK Row Precharge Time tRP 20 - 20 - 20 - ns Write Recovery Time tWR 15 - 15 - 15 - ns Write to Read Command Delay tWTR 1 - 1 - 1 - CK Auto Precharge Write Recovery + Precharge Time tDAL (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - (tWR/tCK) + (tRP/tCK) - CK 7.5 12 7.5 12 8.0 12 ns 7.5 12 10 12 10 12 ns System Clock Cycle Time CL = 2.5 CL = 2 tCK Note 16 15 Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK Data-Out edge to Clock edge Skew tAC -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Clock edge Skew tDQSCK -0.75 0.75 -0.75 0.75 -0.8 0.8 ns DQS-Out edge to Data-Out edge Skew tDQSQ - 0.5 - 0.5 - 0.6 ns Data-Out hold time from DQS tQH tHP -tQHS - tHP -tQHS - tHP -tQHS - ns 1, 10 Clock Half Period tHP min (tCL,tCH) - min (tCL,tCH) - min (tCL,tCH) - ns 1,9 Data Hold Skew Factor tQHS - 0.75 - 0.75 - 0.75 ns 10 Valid Data Output Window tDV tQH-tDQSQ Data-out high-impedance window from CK, /CK tHZ -0.75 0.75 -0.75 0.75 -0.8 0.8 ns 17 Data-out low-impedance window from CK, /CK tLZ -0.75 0.75 -0.75 0.75 -0.8 0.8 ns 17 Rev. 0.5 /Apr. 2006 tQH-tDQSQ tQH-tDQSQ ns 30 HY5DU28422ET HY5DU28822ET HY5DU281622ET -continued- Parameter Symbol DDR266A DDR266B DDR200 Min Max Min Max Min Max Unit Note Input Setup Time (fast slew rate) tIS 0.9 - 0.9 - 1.1 - ns 2,3,5,6 Input Hold Time (fast slew rate) tIH 0.9 - 0.9 - 1.1 - ns 2,3,5,6 Input Setup Time (slow slew rate) tIS 1.0 - 1.0 - 1.1 - ns 2,4,5,6 Input Hold Time (slow slew rate) tIH 1.0 - 1.0 - 1.1 - ns 2,4,5,6 tIPW 2.2 2.5 - ns 6 Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - CK Write DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - CK Clock to First Rising edge of DQS-In tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 CK Data-In Setup Time to DQS-In (DQ & DM) tDS 0.5 - 0.5 - 0.6 - ns Data-in Hold Time to DQS-In (DQ & DM) tDH 0.5 - 0.5 - 0.6 - ns DQ & DM Input Pulse Width tDIPW 1.75 - 1.75 - 2 - ns Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 CK Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 CK Write DQS Preamble Setup Time tWPRES 0 - 0 - 0 - CK Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - CK Write DQS Postamble Time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 CK Mode Register Set Delay tMRD 2 - 2 - 2 - CK Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK Average Periodic Refresh Interval tREFI - 15.6 - 15.6 - 15.6 us Input Pulse Width Rev. 0.5 /Apr. 2006 2.2 6,7, 11~13 8 31 HY5DU28422ET HY5DU28822ET HY5DU281622ET Note: 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter. 2. Data sampled at the rising edges of the clock: A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE. 3. For command/address input slew rate>=1.0V/ns 4. For command/address input slew rate>=0.5V/ns and <1.0V/ns This Derating Table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tIS Delta tIH V/ns ps ps 0.5 0 0 0.4 +50 0 0.3 +100 0 5. CK, /CK slew rates are>=1.0V/ns 6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by design or tester correlation. 7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS): DQ, LDM/UDM. 8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM. 9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). 10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel to n-channel variation of the output drivers. 11. This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns. Input Setup / Hold Slew-rate Derating Table. Input Setup / Hold Slew-rate Delta tDS Delta tDH V/ns ps ps 0.5 0 0 0.4 +75 +75 0.3 +150 +150 12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below VREF +/-310mV for a duration of up to 2ns. I/O Input Level Delta tDS Delta tDH mV ps ps +280 +50 +50 13. I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate 1= 0.5V/ns and Slew Rate2=0.4V/n then the Delta Inverse Slew Rate=-0.5ns/V. (1/SlewRate1)-(1/SlewRate2) Delta tDS Delta tDH ns/V ps ps Rev. 0.5 /Apr. 2006 0 0 0 +/-0.25 +50 +50 +/- 0.5 +100 +100 32 HY5DU28422ET HY5DU28822ET HY5DU281622ET 14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. 15. tDAL = (tDPL / tCK) + (tRP / tCK). For each of the terms above, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. Example: For DDR266B at CL=2.5 and tCK = 7.5 ns, tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67) Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clocks 16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be tRAS - (BL/2) x tCK. 17. tHZ and tLZ transitions occur in the same access time windows as valid data trasitions. These parameters are not referenced to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ). Rev. 0.5 /Apr. 2006 33 HY5DU28422ET HY5DU28822ET HY5DU281622ET CAPACITANCE (TA=25oC, f=100MHz) Parameter Pin Symbol Min Max Unit Input Clock Capacitance CK, /CK CI1 2.0 3.0 pF Delta Input Clock Capacitance CK, /CK Delta CI1 - 0.25 pF Input Capacitance All other input-only pins CI1 2.0 3.0 pF Delta Input Capacitance All other input-only pins Delta CI2 - 0.5 pF Input / Output Capacitance DQ, DQS, DM CIO 4.0 5.0 pF Delta Input / Output Capacitance DQ, DQS, DM Delta CIO - 0.5 pF Note: 1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V 2. Pins not under test are tied to GND. 3. These values are guaranteed by design and are tested on a sample basis only. OUTPUT LOAD CIRCUIT VTT RT=50 Output Zo=50 VREF CL=30pF Rev. 0.5 /Apr. 2006 34 HY5DU28422ET HY5DU28822ET HY5DU281622ET PACKAGE INFORMATION 400mil 66pin Thin Small Outline Package Unit : mm(Inch) 11.94 (0.470) 11.79 (0.462) 10.26 (0.404) 10.05 (0.396) BASE PLANE 22.33 (0.879) 22.12 (0.871) 0.65 (0.0256) BSC 1.194 (0.0470) 0.991 (0.0390) 0.35 (0.0138) 0.25 (0.0098) 0 ~ 5 Deg. SEATING PLANE 0.15 (0.0059) 0.05 (0.0020) 0.597 (0.0235) 0.406 (0.0160) 0.210 (0.0083) 0.120 (0.0047) Note: Package do not mold protrusion. Allowable protrusion of both sides is 0.4mm. Rev. 0.5 /Apr. 2006 35