Voltage: 600 Volts
Current: 1.0 A
MUR160
Features
Mechanical data
Low power loss, high efficiency
Low Leakage
Low Forward Voltage Drop
Hgh Current Capability
High Speed Switching
High Reliability
High Current Surge
Glass Passivated Chip Junction
Case:GMolded Plastic
Epoxy: GUl 94v-0 Rate Flame Retardant
Lead: GMil-Std-202e Method 208c Guaranteed
Mounting Position: GAny
Efficient Fast Rectifier Diode
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Maximum Ratings and Electrical Characterics
MDS030300C1
Page 1
.107(2.7)
.080(2.0)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
CASE-DO41
Dimensions In Inches And (Millimeters)
RATINGS SYMBOL MUR160
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
V
RRM
600
MAXIMUM RMS VOLTAGE V
RMS
420
MAXIMUM DC BLOCKING VOLTAGE V
DC
600
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
.375'' (9.5mm) LEAD LENGTH AT TA=55°C I
O
1
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE
HALF SINE-WAVE SUPERIMPOSED ON RATED LOAD I
FSM
35
TYPICAL JUNCTION CAPACITANCE (NOTE 1) C
J
20
TYPICAL THERMAL RESISTANCE (NOTE 2) R
qja
15
STORAGE TEMPERATURE RANGE T
STG
- 55 TO + 150
OPERATING TEMPERATURE RANGE T
OP
- 55 TO + 150
CHARACTERISTICS SYMBOL MUR160
MAXIMUM FORWARD VOLTAGE AT I
O
DC V
F
1.25
MAXIMUM REVERSE CURRENT AT 25°C I
R
5
MAXIMUM REVERSE CURRENT AT 100°C I
R
250
MAXIMUM REVERSE RECOVERY TIME (NOTE 3) T
RR
50
NOTE:
1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0 F 4.0 VOLTS
2. BOTH LEADS ATTATCHED TO HEAT SINK 20×20×1t(mm) COPPER PLATE AT LEAD LENT H 5mm
3. REVERSE RECOVERY TEST CONDITIONS: IF=0.5A, IR=1.0A, IRR=0.25A
nS
A
A
PF
UNITS
V
mA
mA
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOT ED)
UNITS
V
V
V
Rating and Characteristic Curves (MUR160)
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MDS030300C1 Page 2
Efficient Fast Rectifier Diode
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
FIG. 5-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
100
80
60
40
20
0
PEAK FORWARD SURGE CURRENT (A)
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
10
1.0
.1
.01
INSTANTANEOUS REVERSE CURENT (uA)
0 10 100
N
UMBER OF CYCLES AT 60H
Z
TJ=25oC
TJ=80oC
T
J
=125oC
8.3 ms Single Half Sine Wave
(JEDEC Method)
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
PULSE
GENERATOR
( NOTE 2 )
(+)
25 V
dc
(approx)
(-)
D.U.T.
1Ω
N
ON
INDUCTIVE
OSCILLOSCOPE
( NOTE 1 )
50Ω
N
ONINDUCTIVE
10Ω
N
ONINDUCTIVE
(-)
(+)
+0.5A
0
-0.25A
-1.0A
Trr
AVERAGE FORWARD
CURRENT (A)
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160 180 20
0
LEAD TEMPERATURE (
o
C)
FIG. 2-TYPICAL FORWARD
CURRENT DERATING CURVE
1cm
SET TIME BASE
FOR 10/20 ns/cm
N
OTE: 1. RISETIME=7ns MAX. INPUT
IMPEDANCE=1 MEGOHM 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDENCE=50 OHMS
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED ON
0.3×0.3”(8.0×8.0mm)
COPPER PAD AREAS
FIG. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
MUR160
10
1.0
0.1
.01
.001
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 6-TYPICAL JUNCTION CAPACITANCE
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE (V)
200
100
40
20
10
6
4
2
1
JUNCTION CAPACITANCE (pF)
TJ=25oC
