©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
KSK30
Silicon N-channel Junction Fet
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
IDSS Classification
Symbol Parameter Ratings Units
VGDS Gate-Drain Voltage -50 V
IGGate-Current 10 mA
PDCollector Dissipation 100 mW
TJJunction Temperature 125 °C
TSTG Storage Temperature -55 ~ 125 °C
Symbol Param e ter Test Condit ion Min. Typ. Max. Units
BVGDS Gate-Drain Breakdown Volt age VDS=0, IG= -100µA-50 V
IGSS Gate Leak Current VGS= -30V, VDS=0 -1 nA
IDSS Drain Leak Current VDS=10V, VGS=0 0.3 6.5 mA
VGS (off) Gate-Sourc e Voltage VDS=10V, ID=0.1µA -0.4 -5 V
YFS Forward Transfer Admittance VDS=10V , VGS=0, f=1KHz 1.2 mS
Ciss Input Capacitance VDS=0, VGS=0, f=1MHz 8.2 pF
Crss Feedback Capacitance VGD=10V, VDS=0
f=1MHz 2.6 pF
NF Noise Figure VDS=15V, VGS=0
RG=100KΩ
f=120Hz 0.5 5 dB
Classification R O Y G
IDSS(mA) 0.30 ~ 0.75 0.60 ~ 1.40 1.20 ~ 3.00 2.60 ~ 6.50
KSK30
Low Noise PRE-A MP . Use
• High Input Impedance: IGSS=1nA (MAX)
• Low Noise: NF=0.5dB (TYP)
• High Voltage: VGDS= -50V
1. Source 2. Gate 3. Drain
TO-92
1
©2002 Fairchild Semiconductor Corporation
KSK30
Rev. B1, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. ID-VGS
Figure 3 . ID-VDS Figure 4.
Yfs
-VGS
Figure 5 .
Yfs
-IDFigure 6. VGS(off)-IDSS
-40-200 204060
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = -1.6V
VGS = -1.4V
VGS = -1.2V VGS = -1.0V
V
DS
= 0V
VGS = -0.4V
VGS[V], DRAIN-SOURCE
VOLTAGE
-0.8
-1.6
VGS = -0.6V
VGS = 0V
VGS = -0.8V
VGS = -0.2V
ID[mA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE
VOLTAGE
-3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
RS = 1kΩ
RS = 2kΩ
RS = 5kΩ
RS = 10kΩ
VDS = 10V
ID[mA], DRAIN CURRENT
VGS[V], GATE-SOURCE VOLTAGE
0.0 0.8 1.6 2.4 3.2 4.0
0.0
0.8
1.6
2.4
3.2
4.0
VGS = -1.4V
VGS = -1.2V
VGS = -1.6V
VGS = -1.0V
VGS = -0.8V
VGS = -0.6V
VGS = 0V
VGS = -0.2V
VGS = -0.4V
ID[mA], DRAIN CURRENT
VDS[V], DRAIN-SOURCE VOLTAGE
-4.0 -3.2 -2.4 -1.6 -0.8 0.0
0.0
0.8
1.6
2.4
3.2
4.0 VDS = 10V
f = 1KHz
lYFSl[mS ], FORWARD TRANSTER ADMITTANCE
VGS[V], GATE-SOURCE VOLTAGE
0.0 1.6 3.2 4.8 6.4
0.0
1.6
3.2
4.8
6.4
IDSS = 0.4mA
IDSS = 0.7mA
I
DSS
= 1.7mA
IDSS = 2.8mA
I
DSS
= 6mA
VDS = 10V
f = 1kHz
lYFSl [mS], FORWARD TRANSFER ADMITTANCE
ID[mA], DRAIN CURRENT
0.1 1 10
0.1
1
10
-
-
-IDSS :VDS= 10V
VGS=0
VGS(off):VDS=10V
ID = 0.1 µA
VGS(off)[V], GA TE- SOURC E VOLT AGE
IDSS[mA], DRAIN CURRENT
©2002 Fairchild Semiconductor Corporation
KSK30
Rev. B1, November 2002
Typical Characteristics (Continued)
Figur e 7 .
Yfs
-IDSS Figure 8. Ciss-VGS, Crss-VGD
Figure 9. Power Derating
0.1 1 10 100
0.1
1
10
100 IDSS :VDS=10V
VGS=0V
lYFSl:VDS=10V
VGS=0V
f=1kHz
Ta = 25℃
lYFSl [mS], FORWARD TRANSFER ADMITTANCE
IDSS[mA], DRAIN CURRENT
-0 -2 -4 -6 -8 -10
0.1
1
10
100
1000
VGD[V], GATE-DRAIN VOLTAGE
Crss[pF], FEEDBACK CAPACITACE
Ciss: VDS = 0
Crss: VGS = 0
f = 1MHz
Ciss[pF], INPUT CAPACITACE
VGS[V], GATE-SOURCE VOLTAGE
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
120
140
160
PC[mW], POWER D ISSIPATION
TC[oC], CASE TEMPERATURE
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
KSK30
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FACT™
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
Programmab le Acti ve Droo p™
