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HL6321/22G
AlGaInP Laser Diodes
Description
The HL6321/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW)
structure. They are suitable as light sources for laser levelers and optical equipment for measurement.
Application
• Laser levelers
• Measurement
Features
• Visible light output: 635nm Typ (nearly equal to He-Ne gas laser)
• Optical output power: 15 mW CW
• Low operating current: 105 mA Max
• Low operating voltage: 2.7 V Max
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Absolute Maximum Ratings (TC = 25°C)
Item Symbol Value Unit
Optical output power PO15 mW
LD reverse voltage VR(LD) 2 V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +50 °C
Storage temperature Tstg –40 to +85 °C
Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO15 — — mW Kink free
Threshold current Ith 20 — 75 mA
Operating current IOP — — 105 mA PO = 15 mW
Operating voltage VOP — — 2.7 V PO = 15 mW
Slope efficiency ηs 0.3 — 0.7 mW/mA 9(mW)/(I(12mW)–I(3mW))
Lasing wavelength λp 625 635 642 nm PO = 15 mW
Beam divergence
(parallel) θ// 5 8 11 deg. PO = 15 mW
Beam divergence
(perpendicular) θ⊥ 24 30 36 deg. PO = 15 mW
Monitor current Is 0.07 0.26 0.45 mA PO = 15 mW, VR(PD) = 5 V
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Polarization direction
The polarization direction is TM mode. The polarization of 0.63 µm LD’s is different from that of
0.83/0.78/0.67 µm LD’s. The polarization direction of 0.63 µm LD’s is illustrated in the figure below.
