DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS(ON) (max) IDSS (min) TO-243AA* Die 350V 10 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels. **Die in wafer form. Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Package Option Converters Linear amplifiers Constant current sources Power supply circuits Telecom D G Absolute Maximum Ratings D S Drain-to-Source Voltage BVDSX Drain-to-Gate Voltage BVDGX Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* TO-243AA (SOT-89) 55C to +150C 300C * Distance of 1.6 mm from case for 10 seconds. 06/29/99 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and other Supertex products, refer to the Supertex 1998 Databook. 1 DN3535 Thermal Characteristics Package ID (continuous)* ID (pulsed) Power Dissipation @ TA = 25C C/W C/W ja IDR* IDRM 230mA 500mA 1.6W 15 78 230mA 500mA TO-243AA jc * ID (continuous) is limited by max rated Tj. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol Parameter Min BVDSX Drain-to-Souce Breakdown Voltage 350 VGS(OFF) Gate-to-Source OFF Voltage -1.5 VGS(OFF) IGSS ID(OFF) Typ Max Unit Conditions V VGS = -5.0V, ID = 1.0A -3.5 V VDS = 15V, ID = 10A Change in VGS(OFF) with Temperature 4.5 mV/C VDS = 15V, ID = 10A Gate Body Leakage Current 100 nA VGS = 20V, VDS = 0V Drain-to-Source Leakage Current 20 nA VGS = -5.0V, VDS = 4.5V 200 IDSS Saturated Drain-to-Source Current RDS(ON) Static Drain-to-Source ON-State Resistance VGS = -5.0V, VDS = 100V 1.0 A VGS = -5.0V, VDS = Max Rating 1.0 mA VGS = -5.0V, VDS = 0.8 Max Rating TA = 125C mA VGS = 0V, VDS = 15V 200 10 10 Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 360 COSS CRSS Common Source Output Capacitance Reverse Transfer Capacitance 40 10 1.1 %/C VGS = 0V, ID = 150mA mg ID = 100mA, VDS=10V pF VGS = -5.0V, VDS = 25V, f =1.0Mhz 200 td(ON) Turn-ON Delay Time 15 tr td(OFF) Rise Time Turn-OFF Delay Time 20 20 tf Fall Time 30 VSD Diode Forward Voltage Drop trr Reverse Recovery Time VGS = -0.8V, ID = 50mA RDS(ON) VGS = 0V, ID = 150mA VDD = 25V, ns ID = 150mA, RGEN = 25, VGS = 0V to -10V 1.8 800 V VGS = -5.0V, ISD = 150mA ns VGS = -5.0V, ISD = 150mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 0V 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 DN3535 Typical Performance Curves Output Characteristics Saturation Characteristics 1.0 1.0 VGS = +2.0V 0V 0V -0.5V 0.8 ID (Amperes) ID (Amperes) VGS = +2V -0.5V 0.8 -0.8V 0.6 -1.0V 0.4 -0.8V 0.6 -1V 0.4 -1.5V -1.5V 0.2 0.2 -2V -2V 0.0 0.0 0 50 100 150 200 250 300 0 350 2 4 6 8 10 VDS (Volts) VDS (Volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 2.0 1.0 VDS = 10V 1.5 PD (Watts) GFS (siemens) TO-243AA TA = -55C 0.8 0.6 TA = 25C 1.0 0.4 TA = 125C 0.5 0.2 0.0 0.0 0.0 0.2 0.4 0.6 0 0.8 50 75 100 125 ID (Amperes) TC (C) Maximum Rated Safe Operating Area Thermal Response Characteristics 10 150 Thermal Resistance (normalized) 1.0 TO-243AA (pulsed) 1.0 ID (amperes) 25 TO-243AA (DC) 0.1 0.01 T A =25C TO-243AA P D = 1.6W T C = 25C 0.8 0.6 0.4 0.2 0 0.001 1 10 100 0.001 1000 VDS (Volts) 0.01 0.1 tp (seconds) 3 1.0 10 DN3535 Typical Performance Curves On Resistance vs. Drain Current BVDSV Variation with Temperature 25 1.2 ID = 1mA 20 RDS(ON) (ohms) BVDSV (Normalized) VGS = -5V 1.1 1.0 VGS = 0V 15 10 0.9 5 0 50 100 0 0.0 150 0.4 0.6 0.8 1.0 TJ (C) ID (Amperes) Transfer Characteristics VGS(OFF) and RDS(ON) w/ Temperature 1300 VDS = 10V VGS(OFF) (normalized) TA = -55C 1100 ID (Milliamperes) 0.2 900 TA = 25C 700 TA = 125C 500 300 1.4 2.4 1.2 2.0 VGS(OFF) @ 10A 1.0 1.6 0.8 1.2 RDS(on) @ 0V, 150mA 0.6 RDS(ON) (normalized) 0.8 -50 0.8 100 0.4 -50 0 -3 -2 -1 0 1 2 0 25 50 75 0.4 100 125 150 VGS (Volts) TJ (C) Capacitance vs. Drain Source Voltage Gate Drive Dynamic Characteristics 350 3 VGS = -5V ID = 150mA 2 300 1 250 VGS (volts) C (picofarads) -25 200 150 CISS 100 VDS=40V 0 -1 -2 -3 50 0 0 -4 COSS CRSS -5 10 20 30 0 40 500 1000 1500 2000 QG (picocoulombs) VDS (volts) 06/29/99 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com VF25 VF35 Die Specifications VF25 / VF35 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF25/VF35 45 45 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 1.5 Au Al-Si 6.4 x 6.6 Al 1.5 Au - Si Eutectic Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional. 3. Al-Cu-Si is used for higher operating current densities. Bond pad size represents smaller gate pad. 4. Bond wire size and material depends on AuTCB, TSB or Al USB. 5. Soft solder or organic die attach methods may be used with appropriate backmetal option. CH06F VGS(off) IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max () min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5 200.0 DN25351 350 25 -1.5 -3.5 150.0 DN3135 350 35 -1.5 -3.5 180.0 DN25401 400 25 -1.5 -3.5 150.0 * DN3545 450 20 -1.5 -3.5 200.0 * DN3145 450 60 -1.5 -3.5 120.0 LND150 500 1000 -1.0 -3.0 1.0 3.0 LND250 500 1000 -1.9 -3.0 1.0 3.0 max (mA) * * * * Add package suffix for complete part number, e.g., LND150N3 is LND150 in a TO-92 package. NOTES: 1. Not recommended for new design. [Home] http://www.supertex.com/Products/Selector_Guides/CH06E_Table/ch06e_table.htm [7/20/2001 12:44:52 PM] Die ND * VF25 * VF35 * VF31 * VF25 * VF25 * VF21 * LND1 * *