Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 1 of 7 January 2008
AH31
High Dynamic Range IF Amplifier
Product Features
50 – 1000 MHz
19 dB Gain
+22 dBm P1dB
+42 dBm OIP3
1.9 dB Noise Fi gure
Single Voltage Supply (+5 V)
Lead-free/Green/RoHS-
compliant SOT-89 Package
MTTF > 1000 years
Applications
High linearity and low-noise
amplifier following a mixer
High performance amplifier
in IF path of TX/RX systems
Product Description
The AH31 is a high dynamic range amplifier in a low-cost
surface-mount package. The combination of low noise
figure, high gain, and high output IP3 is ideal as an IF
amplifier for receiver and transmitter applications.
The device combines dependable performance with
consistent quality to maintain MTTF values exceeding
1000 years at mounting temperatures of +85 °C and is
available in the environmentally-friendly lead-free/green
/RoHS-compliant SOT-89 package. All devices are 100%
RF & DC tested.
The MMIC amplifier based on GaAs MESFET technology
can be configured for IF and RF applications with various
current and next generation wireless technologies.
Functional Diagram
RF IN GND RF OUT
GND
1 23
4
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 50 1000
Test Frequency MHz 240
Gain (3) dB
19
Output P1dB dBm +22
Output IP3 (2) dBm +37 +42
Supply Voltage V +5
Operating Current Range mA 120 150 180
1. Test conditions : T = 25 ºC, Vdd = +5 V, 50 Ω system.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -55 to +150 °C
DC Voltage +6 V
RF Input Power (continuous) 4 dB above Input P1dB
Junction Temperature +160 °C
Thermal Resistance, Rth 59 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (3)
Parameter Units Typical
Frequency MHz 75 170 240 500 900
S21 dB 19.5 19.2 19.3 18.4 16.6
S11 dB -21 -13 -19 -13 -14
S22 dB -17 -14 -13 -9.2 -9
Output P1dB dBm +22 +21 +22 +21 +20
Output IP3 dBm +42 +42 +42 +41 +41
Noise Figure dB 2.6 2.3 2.2 1.9 2.2
3. Typical parameters reflect performance in an application circuit.
Ordering Information
Part No. Description
AH31-G High Dynamic Range IF Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH31-PCB75 65 – 85 MHz Fu lly Assembled Evalua tion Board
AH31-PCB170 1 5 5 18 5 M Hz F u l ly A s s e m bl e d E va l u a t i on B o a rd
AH31-PCB240 2 2 0 26 0 M Hz F u l ly A s s e m bl e d E va l u a t i on B o a rd
AH31-PCB500 4 5 0 55 0 M Hz F u l ly A s s e m bl e d E va l u a t i on B o a rd
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 2 of 7 January 2008
AH31
High Dynamic Range IF Amplifier
Typical Device Data
S-parameters (Vd = +5 V, Id = 150 mA, unmatched 50 Ω system).
0 0.2 0.4 0.6 0.8 1
Frequency (GHz)
Gain and Max. Stab le G ain
14
16
18
20
22
24
S21 and MSG (dB)
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11
Swp Max
1GHz
Swp Min
0.01GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22
Swp Max
1GHz
Swp Min
0.01GHz
Notes:
Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads.
The amplifier requires a matching network at the input for proper operation. The amplifier is intrinsically well matched at the
output and ideally should “look” into 50 Ω. Any deviation from this can affect the linearity IP3 performance for the device.
For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The
maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 250 – 1000 MHz, with markers placed at 0.25 – 1.0 GHz in 0.25 GHz increments.
Application Circuit PC Board Layout
Circuit Board Material: .014” FR-4, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
Microstrip line details: width = .024”, spacing = .036”
Typical Device Data
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 °C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -2.72 -5.46 17.01 175.91 -28.54 6.89 -7.44 -5.46
100 -2.77 -9.52 16.94 172.89 -28.42 8.53 -7.56 -7.93
200 -2.81 -18.01 16.86 166.99 -27.86 14.09 -7.59 -13.42
300 -2.87 -26.32 16.74 161.33 -27.14 18.38 -7.63 -19.94
400 -2.87 -35.19 16.64 155.16 -26.32 21.01 -7.83 -26.57
500 -2.95 -43.58 16.50 149.45 -25.45 22.42 -7.92 -32.04
600 -2.91 -51.71 16.40 143.72 -24.66 22.73 -8.00 -38.12
700 -2.99 -60.03 16.21 138.07 -23.89 21.29 -8.31 -45.01
800 -3.03 -67.73 16.05 132.16 -23.27 19.94 -8.46 -50.89
900 -3.14 -75.45 15.81 126.99 -22.71 17.74 -8.77 -57.30
1000 -3.22 -82.88 15.55 121.64 -22.17 15.73 -8.95 -63.63
Maximum Stable Gain
S21
Specifications and information are subject to change without notice
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AH31
High Dynamic Range IF Amplifier
Application Circuit: 65 – 85 MHz (AH31-PCB75)
Typical Performance
Frequency 75 MHz
Gain 19.5 dB
S11 -21 dB
S22 -17 dB
Output P1dB +22 dBm
Output IP3 +42 dBm
Noise Figure 2.6 dB
Bias +5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
15
16
17
18
19
20
55 65 75 85 95
Frequency (MHz)
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
S11 S22
S21
Noise Figure
1
1.5
2
2.5
3
3.5
55 65 75 85 95
Frequency (MHz)
Noise Figure (dB)
Output IP3
36
38
40
42
44
46
55 65 75 85 95
Frequency (MHz)
Output IP3 (dBm)
Application Circuit: 155 – 185 MHz (AH31-PCB170)
Typical Performance
Frequency 170 MHz
Gain 19.2 dB
S11 -13 dB
S22 -14 dB
Output P1dB +21 dBm
Output IP3 +42 dBm
Noise Figure 2.3 dB
Bias +5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
15
16
17
18
19
20
150 160 170 180 190
Frequency (MHz)
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
S11
S22
S21
Noise Figure
0.0
0.5
1.0
1.5
2.0
2.5
150 160 170 180 190
Frequency (MHz)
Noise Figure (dB)
Output IP3
36
38
40
42
44
46
150 160 170 180 190
Frequency (MHz)
Output IP3 (dBm)
AH31 RF
VS = +5 V C5
.018 μF
L1
220 nH
C4
.018 μF
L2
330 nH
RF IN
R1
5.1 ΩC3
12 pF
C1
.018
μ
F
R2
0 Ω
AH31 RF
VS = +5 V C5
.018 μF
L1
82 nH
C4
1000 pF
L2
330 nH
RF IN
R1
3.3 ΩC3
4.7 pF
C1
1000
p
F
R2
0 Ω
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com Page 4 of 7 January 2008
AH31
High Dynamic Range IF Amplifier
Application Circuit: 220 – 260 MHz (AH31-PCB240)
Typical Performance
Frequency 240 MHz
Gain 19.3 dB
S11 -19 dB
S22 -12.5 dB
Output P1dB +22 dBm
Output IP3 +42 dBm
Noise Figure 2.2 dB
Bias +5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R2 is used as a placeholder for a different application circuit. It can be removed from the circuit.
4. C2 (from the silkscreen) is not utilized in this application circuit.
S-Parameters
15
16
17
18
19
20
200 220 240 260 280
Frequency (MHz)
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
S11
S22
S21
Noise Figure vs Frequency
1.0
1.5
2.0
2.5
3.0
3.5
220 230 240 250 260
Frequency (MHz)
Noise Figure ( dB)
-40 C +25 C +85 C
P1dB vs Frequency
14
16
18
20
22
24
220 230 240 250 260
Frequency (MH z)
P1dB (dBm)
-40 C +25 C +85 C
OIP3 vs Frequency
25°C, Freq. spacing = 1 M H z, Pout=+10 dB m /tone
34
36
38
40
42
44
220 230 240 250 260
Frequency (M Hz)
Output IP3 (dBm)
O utput IP3 vs. Tem perature
Frequency = 240, 241 M Hz, Pout=+10 dBm /tone
34
36
38
40
42
44
-40-200 20406080
Tem perature (°C)
Output IP3 (dBm)
Ou tpu t IP3 v s . Outp ut P owe r
25°C , Frequency = 240, 241 MH z
25
30
35
40
45
50
0246810
Ou tpu t P o w e r (d B m)
Output IP3 (dBm)
AH31 RF
VS = +5 V C5
.018 μF
L1
68 nH
C4
1000 pF
L2
220 nH
RF IN
R1
3.3 ΩC3
2.2 pF
C1
1000
p
F
R2
0 Ω
Specifications and information are subject to change without notice
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AH31
High Dynamic Range IF Amplifier
Application Circuit: 450 – 550 MHz (AH31-PCB500)
Typical Performance
Frequency 500 MHz
Gain 18.4 dB
S11 -12.7 dB
S22 -9.2 dB
Output P1dB +21 dBm
Output IP3 +41 dBm
Noise Figure 1.9 dB
Bias +5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1, C2, and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
15
16
17
18
19
450 475 500 525 550
Frequency (MHz)
Gain (dB)
-20
-15
-10
-5
0
S11, S22 (dB)
S11
S22
S21
Noise Figure
0.0
0.5
1.0
1.5
2.0
2.5
450 475 500 525 550
Frequency (MHz)
Noise Figur e (dB)
Output IP3
36
38
40
42
44
46
450 475 500 525 550
Output IP3 (dBm)
Frequency (MHz)
Reference Design: 900 MHz
Typical Performance
Frequency 900 MHz
S21 - Gain 16.6 dB
S11 -14 dB
S22 -9 dB
Output P1dB +20 dBm
Output IP3 +41 dBm
Noise Figure 2.2 dB
Bias 5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1 and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
13
14
15
16
17
800 850 900 950 1000
Frequency (MHz)
Gain (dB)
-20
-15
-10
-5
0
S11, S22 (dB)
S11
S22
S21
Noise Figure
0.0
0.5
1.0
1.5
2.0
2.5
800 850 900 950 1000
Frequency (MHz)
Noise Figur e (dB)
AH31 RF OUT
VS = +5 V
C5
.018 μF
L1
22 nH
C4
1000 pF
L2
150 nH
RF IN C1
1000 pF
R2
8.2 Ω
AH31 RF
VS = +5 V
C5
.01 μF
C6
100 pF
L2
39 nH
L1
12 nH
C4
100 pF
RF IN
C2
2.4 pF
C1
100 pF
R2
10 Ω
Specifications and information are subject to change without notice
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AH31
High Dynamic Range IF Amplifier
Broader Bandwidth Reference Designs
The AH31 can be designed to achieve good performance over a broader frequency range (around one octave) by using an
additional L-C matching n etwork at the input. An equalization R-C network can also be added at the o utput to slightly flatten
out the typical downward slope of the amplifier circuit.
Reference Design: 36 - 56 MHz
CAP
ID=C4
C=10000 pF
CAP
ID=C3
C=12 pF
CAP
ID=C2
C=47 pF
IND
ID=C1
L=220 nH
IND
ID=L1
L=560 nH
IND
ID=L2
L=560 nH
CAP
ID=C5
C=10000 pF
RES
ID=R1
R=3.3 Ohm
SUBCKT
ID=S1
NET="AH31"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
+5V
30 35 40 45 50 55 60
Frequency (MHz)
S-Parameters
16
17
18
19
20
21
Gain (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) DB(|S(2,1)|) (L)
Reference Design: 45 - 90 MHz
CAP
ID=C4
C=10000 pF
IND
ID=L1
L=330 nH
CAP
ID=C3
C=10 pF
CAP
ID=C2
C=33 pF
IND
ID=C1
L=120 n H
IND
ID=L2
L=330 n H
CAP
ID=C5
C=10000 pF
RES
ID=R1
R=3.3 Ohm
RES
ID=R2
R=20 Ohm
CAP
ID=C7
C=180 pF
SUBCKT
ID=S1
NET="AH31"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
+5 V
0.04 0.05 0.06 0.07 0.08 0.09 0.1
Frequency ( GHz)
S-Parameters
14
15
16
17
18
19
Gain (dB)
-25
-20
-15
-10
-5
0
S11
,
S22
(
dB
)
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
Reference Design: 65 - 165 MHz
CAP
ID=C4
C=10000 pF
IND
ID=L1
L=180 nH
CAP
ID=C3
C=3.9 pF
CAP
ID=C2
C=15 pF
IND
ID=C1
L=100 nH
IND
ID=L2
L=330 nH
CAP
ID=C5
C=10000 pF
RES
ID=R1
R=3.3 Ohm
SUBCKT
ID=S1
NET="AH31"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
+5V
0.06 0.08 0.1 0.12 0.14 0.16 0.18
Frequency (GHz)
S-Parameters
15
16
17
18
19
20
S21 (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
Reference Design: 80 - 200 MHz
CAP
ID=C4
C=10000 pF
IND
ID=L1
L=150 nH
CAP
ID=C2
C=2.7 pF
CAP
ID=C1
C=12 pF
IND
ID=C1
L=82 nH
IND
ID=L2
L=330 nH
CAP
ID=C5
C=10000 pF
RES
ID=Rs1
R=3.3 Ohm
SUBCKT
ID=S1
NET="AH31"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
+5V
0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.22
Frequency (GH z)
S-Parameters
15
16
17
18
19
20
S21 (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
DB(|S(1,1)|) (R) DB(|S (2,1)|) (L ) DB(|S(2,2)|) (R)
Specifications and information are subject to change without notice
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AH31
High Dynamic Range IF Amplifier
AH31-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The AH31-G will be marked with an
“AH31G” designator. An alphanumeric lot
code (“XXXX-X”) is also marked below the
part designator on the top surface of the
package. The obsolete tin-lead package is
marked with an “AH31” designator followed
by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes 1000V to <2000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diam eter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the boar d contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum .
7. All dimensions are in millimeters (inches). Angles are
in degrees.
XXXX-X
AH31G