AON7406
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 25A
R
DS(ON)
(at V
GS
=10V) < 17mΩ
R
DS(ON)
(at V
GS
=4.5V) < 23mΩ
Typical ESD protection HBM Class 2
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
• The AON7406 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
• RoHS and Halogen-Free Compliant
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
Drain-Source Voltage
30
Top View
G
D
S
DFN 3x3A
Top View Bottom View
Pin 1
Pin 1
G
S
S
S
D
D
D
D
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
6.6 75
8
Power Dissipation
A
P
DSM
W
T
A
=70°C
15.5
2
T
A
=25°C
Continuous Drain
Current
18
9
Avalanche energy L=0.1mH
C
I
DSM
W
A
T
A
=70°C
mJ
Avalanche Current
C
Continuous Drain
Current I
D
25
15
T
C
=25°C
T
C
=100°C
V
Drain-Source Voltage
30
7A19
V±20Gate-Source Voltage
A
T
A
=25°C 50Pulsed Drain Current
C
°C
Thermal Characteristics Units
Maximum Junction-to-Ambient
°C/W
R
θJA
30
60 40
Parameter Typ Max
T
C
=25°C
3.1
6
T
C
=100°C
Junction and Storage Temperature Range -55 to 150
Power Dissipation
B
P
D
Rev.6.0: July 2013
www.aosmd.com Page 1 of 6
AON7406
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
10 µA
V
GS(th)
Gate Threshold Voltage 1.2 1.8 2.4 V
I
D(ON)
50 A
14 17
T
J
=125°C 20 24
18 23 mΩ
g
FS
40 S
V
SD
0.75 1 V
I
S
15 A
C
iss
600 740 888 pF
C
oss
77 110 145 pF
C
rss
50 82 115 pF
R
g
0.5 1.1 1.7 Ω
Q
g
(10V) 12 15 18 nC
Q
g
(4.5V) 6 7.5 9 nC
Q
gs
2.5 nC
Q
gd
3 nC
t
D(on)
5 ns
t
3.5
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=9A
Gate-Body leakage current
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
On state drain current
V
GS
=0V, V
DS
=15V, f=1MHz
Drain-Source Breakdown Voltage
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±16V
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=9A
V
GS
=4.5V, I
D
=8A
Forward Transconductance
Diode Forward Voltage
Zero Gate Voltage Drain Current
V
=10V, V
=15V, R
=1.67
Ω
,
Turn-On Rise Time
Turn-On DelayTime
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=9A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Total Gate Charge
t
r
3.5
ns
t
D(off)
19 ns
t
f
3.5 ns
t
rr
68 10 ns
Q
rr
14 18 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=9A, dI/dt=500A/µs
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.67
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time I
F
=9A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Turn-On Rise Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t ≤10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.6.0: July 2013 www.aosmd.com Page 2 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=8A
VGS=10V
ID=9A
25°C
125
°
C
V
DS
=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
25
30
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3V
4V
5V
10V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
10
15
20
25
30
35
40
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=9A
25°C
125°C
Rev.6.0: July 2013 www.aosmd.com Page 3 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Coss
C
rss
VDS=15V
ID=9A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10
µ
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
40
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Operating Area (Note F)
RθJC=8°C/W
Rev.6.0: July 2013 www.aosmd.com Page 4 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
4
8
12
16
20
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De
-
rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction
-
to
-
TA=25°C
1
10
100
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Current De
-
rating (Note F)
Figure 15: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=75°C/W
Rev.6.0: July 2013 www.aosmd.com Page 5 of 6
AON7406
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.6.0: July 2013 www.aosmd.com Page 6 of 6