MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24B * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107.5 930.25 B2 2-6.5 12 23.5 C1 E2 23 23 34.5 18.5 C2E1 5 E2 4 C2E1 C1 B1 E1 13 E2 B2 4 E2 E1 B1 3-M5 22 8 15 8 22 21 (8) 6.5MIN. LABEL (23) +1 28.5 -0.5 37.2 Tab#110, t=0.5 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A -IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25C 500 W IB Base current DC 4 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Conditions Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 250 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=75A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=75A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- 15 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.25 C/ W Diode part (per 1/2 module) -- -- 1.2 C/ W Conductive grease applied (per 1/2 module) -- -- 0.13 C/ W IC=75A, IB=100mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) Tj=25C 160 IB=200mA IB=100mA 120 IB=400mA 80 IB=40mA 40 IB=20mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 10 0 7 5 4 3 2 3.4 3.8 4.2 BASE-EMITTER VOLTAGE 5.0 4.6 101 7 5 4 3 2 2 3 4 5 7 10 2 2 3 4 VBE(sat) VCE(sat) 10 0 7 5 4 3 IB=100mA 2 Tj=25C Tj=125C -1 10 4 5 7 10 1 2 3 4 5 7 10 2 VBE (V) 2 3 4 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=100A 4 3 IC=75A 2 IC=50A 1 Tj=25C Tj=125C ton, ts, tf (s) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 5 7 10 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 0 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4V Tj=25C 10 -1 7 5 4 3 3.0 VCE=4V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 VCE=10V 10 3 7 5 4 3 2 10 2 SATURATION VOLTAGE 0 10 4 7 5 4 3 2 3 5 710 -22 3 5 710 -1 2 3 5 7 10 0 2 3 BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 ts tf ton VCC=600V IB1=150mA IB2=-1.5A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 160 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 3 2 ts 10 1 7 5 4 3 2 tf VCC=600V IC=75A 7 IB1=150mA 5 Tj=25C 4 Tj=125C 3 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 2 3 BASE REVERSE CURRENT -IB2 (A) 140 120 100 80 60 40 20 Tj=125C -IB2=1A 0 0 200 400 600 800 1000 1200 1400 COLLECTOR-EMITTER VOLTAGE 10 3 7 5 3 2 100 1mS 50S 200S DC 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 2 3 5 710 1 2 3 5 7 10 2 2 3 5 7 10 3 2 COLLECTOR-EMITTER VOLTAGE 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 0.32 0.28 0.24 Zth (j-c) (C/ W) SECOND BREAKDOWN AREA 90 100S DERATING FACTOR (%) 10 2 7 5 3 2 DERATING FACTOR OF F. B. S. O. A. 0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA VCE (V) TIME (s) 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (C) 0 0.4 0.8 1.2 Tj=25C Tj=125C 2.0 1.6 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM75DY-24B HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 Irr VCC=600V 10 1 IB1=0.15A 7 IB2=-1.5A 5 3 2 10 1 Qrr trr (s) 10 2 7 5 3 2 800 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 trr 7 5 3 Tj=25C 2 Tj=125C -1 10 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/