DS04-27502-5E
FUJITSU SEMICONDUCTOR
DATA SHEET
ASSP For Power Supply Applications
Bi-CMOS
Battery Backup IC
MB3790
■DESCRIPTION
The MB3790 is designed to control pow er supplies to SRAM, logic IC, or other circuit de vices and protects them
against momentary power failures by using backup batteries. In addition to its function to supply the power to
these devices, it has a function to switch the source of power to the primary or secondary backup battery when
the power supply voltage drops below a predetermined lev el. Also, it outputs a reset signal when the power supply
turns on or off or when a fault occurs in the power supply.
Ideally designed as a single-chip IC f or po w er supply control, the MB3790 consumes only a minimal current and
comes in a thin-type package. Therefore, it is best suited for power supply control in memor y cards and similar
other devices.
■FEATURES
• Input circuit current consumption when non-loaded: 50 µA [Typ]
• Output drive current: 200 mA [Max]
• Resistance between input and output: 0.5 ohms [Typ]
• Input power-down detection level: 4.2 V ± 2.5 %
(Continued)
■PACKAGES
* : Since the TSSOP is an extremely thin package, use a partial heating method when mounting the device.
16-pin Plastic SOP
(FPT-16P-M06)
20-pin Plastic TSSOP*
(FPT-20P-M04)
MB3790
2
(Continued)
• On-chip power-on reset circuit
• Primary battery voltage-down detection levels: 2.65 V, 2.37 V
• On-chip secondary battery recharging function
• Output current during battery backup: VBAT1: 500 µA [Max], VBAT2: 50 µA [Max]
• Leakage current: 0.5 µA [Max]
■PIN ASSIGNMENTS
1
2
3
4
5
6
7
8
N.C.
V BAT1
V OUT
V OUT
V BAT2
ALARM1
ALARM2
GND
16
15
14
13
12
11
10
9
CONTROL
N.C.
V IN
V IN
V SENSE
CT
RESET
RESET
(TOP VIEW)
(FPT-16P-M06)
1
2
3
4
5
6
7
8
9
10
N.C.
V BAT1
V OUT
V OUT
V BAT2
N.C.
N.C.
ALARM1
ALARM2
GND
20
19
18
17
16
15
14
13
12
11
CONTROL
N.C.
V IN
V IN
V SENSE
N.C.
N.C.
CT
RESET
RESET
(TOP VIEW)
(
FPT-20P-M04
)
MB3790
3
■BLOCK DIAGRAM
ALARM1
CONTROL
+
-
+
-
+
-
V IN
V SENSE
GND
240 kΩ
R
SQ
1.24 V
590 kΩ
V BAT2
CT
Vth : 1.5 V
= 0.5 Ω
R ON
100 Ω
500 Ω
3 µA
Vth : 3 V
V BAT1
2.37 V
2.65 V V IN
SBD
V IN
V OUT
V OUT
V OUT
ALARM2
RESET
RESET
Reference
voltage power
supply circuit
MB3790
4
■PIN DESCRIPTION
Pin number Symbol I/O Name and function
16P 20P
1 1 N.C. — Non connection
22V
BATI I This pin connects to the primary battery.
3, 4 3, 4 VOUT O These pins supply the output v oltage . (Range of output current value
IOUT ≤ 200 mA)
55V
BAT2 I/O This pin connects to the secondary battery. When the power supply
voltage is greater than or equal to the detection level (i.e., VINH), the
secondary battery is recharged using the constant-voltage method of
charging.
— 6, 7 N.C. — Non connection
68ALARM1
O This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.65 V, its output voltage is
forced to a Low level.
79ALARM2
O This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.37 V, its output voltage is
forced to a Low level.
8 10 GND — This pin connects to the ground (0 V).
9 11 RESET O This pin outputs a reset signal. When the power supply voltage is
less than or equal to VINL, it outputs a High level.
If the power supply voltage of SRAM is less than the designated
range , it directly controls the CE or CS of SRAM to disable writes and
thereb y protect the data in memory.
10 12 RESET O This pin outputs an inverted signal of RESET.
11 13 CT— This pin is used to set the reset pulse width.
Insert a capacitor between this pin and GND to set the pulse width.
— 14, 15 N.C. — Non connection
12 16 VSENSE I This pin accepts comparator input for detecting the power supply
voltage level. For details, refer to APPLICATION in this data sheet.
13, 14 17, 18 VIN I These pins accept the input voltage for the device.
15 19 N.C. — Non connection
16 20 CONTROL I This pin is used f or output control. For details, ref er to APPLICATION
in this data sheet.
MB3790
5
■FUNCTIONAL DESCRIPTION
1. Battery Backup Function
• When the pow er supply v oltage e xceeds the v oltage detection lev el (i.e., VINH), the de vice outputs a current of
up to 200 mA from the VIN power supply to the load circuit via the VOUT pin.
• When the pow er supply voltage is less than or equal to VINL, the de vice switches the source of pow er for VOUT
from VIN to the primary or secondary battery for backup purposes.
2. Power Supply Voltage Level Detect Function
When the pow er supply v oltage drops below VINL, the v oltage le v el detection compar ator is actuated to perf orm the
following (note that the detection v oltage level has the hysteresis characteristics listed in ELECTRICAL CHARAC-
TERISTICS in this data sheet):
• The comparator first outputs the RESET signal (High level).
• It switches the source of power for the load circuit to the primary or secondary battery.
The power supply voltage detection level can be adjusted by fitting an external resistor to the VSENSE pin. When
adjusting the detection level, be sure to set it to 4.0 V or higher by consider ing the power supply voltage for the
internal circuit operation.
In addition, the detection set time can be e xtended by connecting a capacitor. F or this method of adjustment, refer
to APPLICATION in this data sheet.
3. Reference Voltage Circuit
This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimming-
adjusted exact reference voltage.
The reference voltage power supply is used to set the reference voltage/constant current values of the detection
circuit, as well as the secondar y battery recharging voltage.
4. Power-on Reset Function
By charging the capacitor connected to the CT pin with constant current (approx. 3 µA), this function determines
the reset pulse width. The calculation formula for this is given below:
Reset pulse width tPO (s) ≅ CT (F) × 106
(When CT = 1000 pF, tPO ≅ 1 ms [Typ])
5. Primary Battery Voltage Detection Function
If the primary battery voltage drops below the detection lev el when the power supply v oltage is greater than or equal
to VINL, the device outputs an alarm signal (Low level) from the CMOS output pin, ALARM1 or ALARM2.
Note that the voltage level detection comparator has the hysteresis character istics listed in ELECTRICAL CHAR-
ACTERISTICS in this data sheet.
• When the primary battery voltage is 2.65 V [Typ] or less:
The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it’s time to replace the primary
battery.
• When the primary battery voltage is 2.37 V [Typ] or less:
The ALARM2 output pin is forced to a low level to issue an alarm indicating that the pr imary battery voltage
is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)
6. Secondary Battery Recharging Function
When the power supply voltage is greater than or equal to VINL, the device recharges the secondary battery using
the constant-voltage method of charging. Note that the typical value of the device's internal recharging resistor is
500 ohms.
MB3790
6
■DESCRIPTION OF OPERATION
1. Operation When the Input Voltage Goes On or Off
(1) Power-on
While the power supply voltage is less than VINH (4.3 V Typ), the protected devices such as SRAM or a microprocessor
are in the standby mode with the power supplied by the battery.
When the power supply voltage rises to a lev el greater than or equal to VINH, the PMOS transistor between the input/
output pins turns on and the power for such devices is supplied from the VIN pin. At the same time, the primar y
battery voltage detection and the secondary battery recharging operations are actuated.
(2) Standby mode
When the power supply voltage r ises to a level greater than or equal to VINH, the RESET pin outputs a High level
f or the set duration of time and the de vices such as SRAM or a microprocessor are held in the standb y mode. Note
that the set duration of time can be adjusted by changing the capacitance of the CT pin.
The RESET pin outputs an inverted signal of the RESET pin.
(3) Active mode
The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.
V IN
(1)
DV IN V INH
V INL
V OUT
RESET
V IN-DV1
V BAT1-DVB1
V IN-DV1
V BAT1-DVB1
t PO t PO
V IN-DV1RESET
(2) (3) (4) (2) (3) (4)
High level Low level High level Low level High level
Low levelHigh levelLow levelHigh levelLow level
MB3790
7
(4) Momentary power failure or voltage dip
When the power supply voltage drops less than or equal to VINL. (4.2 V Typ) as the power supply goes down or its
v oltage dips momentarily, the RESET pin outputs a High level and the RESET pin outputs a low level. The de vices
such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When
in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped.
Note: To guarantee back up operation in case of momentary power f ailure , make sure the 5 V-to-0 V fall time on VIN
is 50 µs or more by using, for example, a capacitor.
2. Alarm Operation
If the primary battery voltage decreases while the po w er supply voltage (VIN) is greater than or equal to VINH (4.3 V
Typ), alarm signals are output as described below. At this time , if the VBAT1 pin is released open, the output from the
alarm pin becomes indeterminate.
(1) Primary battery replacement alarm (alarm-1 output)
If the primary battery voltage drops to VBAT1 (2.65 V Typ), the ALARM1 pin is f orced to a Low le v el to issue an alarm
indicating that it’s time to replace the primary battery.
(2) Primary battery minimum voltage alarm (alarm-2 output)
If the primary battery voltage furt her drops to VBAT2 (2.37 V Typ), the ALARM2 pin is forced to a Low level to issue
an alar m indicating that the primary batter y power has dropped below the voltage necessary to retain the SRAM
data (approx. 2.0 V).
V BAT1
(1)
DV BAT1 V BATH1
DV BAT2
V BATL1
V BATH2
V BATL2
ALARM1
ALARM2
(1)
(2)(2)
MB3790
8
■ABSOLUTE MAXIMUM RATINGS (Ta = +25°C)
* : When mounted on a 4 cm-square double-side epoxy board.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■RECOMMENDED OPERATING CONDITIONS
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter Symbol Conditions Rating Unit
Min Max
Input voltage VIN
—
–0.3 6 V
Battery voltage VBAT –0.3 6 V
Reset output Voltage VRESET – 0.3 V OUT + 0.3 (≤ 6) V
Alarm output Voltage VALARM – 0.3 VIN + 0.3 (≤ 6) V
Output current IOUT 250 mA
Output high current IOH Source current 6mA
Output low current IOL Sink current 6mA
Power dissipation PDTa ≤ +25°CTSSOP 450* mW
SOP 540* mW
Storage temperature Tstg — –55 +125 °C
Parameter Symbol Conditions Value Unit
Min Typ Max
Input voltage VIN
—
—5.05.5 V
Battery voltage VBAT —3.03.3 V
Output current IOUT 0 — 200 mA
Output current during
battery backup
IO(BAT1) Supply from the
primary battery — — 500 µA
IO(BAT2) Supply from the
secondary battery ——50
Operating temperature Top — –30 — +70 °C
MB3790
9
■ELECTRICAL CHARACTERISTICS
• DC characteristics
(Recommended operating conditions unless otherwise noted.) (VIN = +5 V, Ta = +25°C)
(Continued)
Parameter Symbol Conditions Value Unit
Min Typ Max
All sections Input current IIN1 IOUT = 0 mA — 50 100 µA
Backup
Power
Supply
Section
Input/output voltage
difference DV1IOUT = 1 mA — 0.5 10 mV
DV2IOUT = 200 mA — 100 300 mV
Output delay time tro CO = 0.01 µF, CT = 0 — 2.0 10 µs
Power
Supply
Monitoring
Section
Input low voltage detection
VINL VIN 4.10 4.20 4.30 V
Ta = – 30°C to + 70°C 4.05 4.20 4.35 V
VINH VIN 4.20 4.30 4.40 V
Ta = – 30°C to + 70°C 4.15 4.30 4.45 V
Input low voltage h ysteresis
width DVIN VINH – VINL 50 100 150 mV
Reset output voltage VOHR IOHR = 1 mA 4.5 4.8 — V
VOLR IOLR = 5 mA — 0.2 0.4 V
Reset output voltage
during backup V IN = 0 V
VBAT1 = 3 V
VOHR IOHR = 0.2 mA 2.2 2.6 — V
VOLR IOLR = 3 mA — 0.2 0.4 V
Reset pulse width tPO CT = 1000 pF 0.5 1.0 2.0 ms
Input pulse width tPI 5.0 — — µs
Reset output rise time trR CT = 1000 pF
CL = 100 pF —2.03.0µs
Reset output fall time tfR —0.21.0µs
Reset output delay time tpdR VIN slew rate < 0.1 V/µs — 2.0 10 µs
MB3790
10
(Continued)
(VIN = +5 V, Ta = +25°C)
Parameter Symbol Conditions Value Unit
Min Typ Max
Battery-1
Monitoring
Section
Low voltage detection 1
VBATL1 VBAT 2.55 2.65 2.75 V
Ta = – 30°C to +70°C 2.52 2.65 2.78 V
VBATH1 VBAT 2.59 2.69 2.79 V
Ta = – 30°C to +70°C 2.56 2.69 2.82 V
Low voltage detection-1
hysteresis width DVBAT1 VBATH1 – VBATL1 20 40 60 mV
Low voltage detection 2
VBATL2 VBAT 2.27 2.37 2.47 V
Ta = – 30°C to +70°C 2.24 2.37 2.50 V
VBATH2 VBAT 2.31 2.41 2.51 V
Ta = – 30°C to +70°C 2.28 2.41 2.54 V
Low voltage detection-2
hysteresis width DVBAT2 VBATH2 – VBATL2 20 40 60 mV
Low voltage detection
difference DVBAT VBATL1 – VBATL2 0.26 0.28 0.30 V
Battery-1 input current IBATA VBAT = 3 V, VIN = 0 V –100 — 500 nA
IBATB VBAT = 3 V, VIN = 5 V –100 — 500 nA
Battery-1 output voltage
difference
during backup, CTL = GND DVB1 IBAT1 = 100 µA — 0.30 0.35 V
IBAT1 = 10 µA — 0.10 0.15 V
Alarm output voltage VOHA IOHA = 4 mA 4.5 4.8 — V
VOLA IOLA = 5 mA — 0.2 0.4 V
Alarm output rise time trA CL = 100 pF —2.03.0µs
Alarm output fall time tfA —0.21.0µs
Alarm output delay time tpdA 50 mV overdrive — 2.0 10 µs
Battery-2
Monitoring
Section
Battery-2 recharging
voltage VCHG ICHG = –10 µA 2.80 3.00 3.20 V
Battery-2 recharging current ICHG VCHG = 2.0 V 1.0 2.0 — mA
Battery-2 output voltage
difference
during backup DVB2 IBAT2 = 10 µA — 0.10 0.15 V
MB3790
11
■TIMING CHART
1. Rise/Fall Times on Reset and Alarm Pins: tr/tf
2. Reset Pulse Width: tPO; Input Pulse Width: tPI; Reset Output Delay Time: tpdR
ALARM1
ALARM2
RESET
RESET
10%
90% 90%
10%
t r t f
5V
RESET
4V
V IN
t PI
t pdR
t PO t pdR
V INH
V INL
V IH - DV1
V BAT1 - DVB2
MB3790
12
3. Alarm Output delay time: tpdA
4. VOUT Output Delay Time: tro
50mV
V BAT1 50mV V BATL1, V BATL2
t pdA
ALARM1
ALARM2
5V
V IN
t ro
V OUT
98%
MB3790
13
■TYPICAL CHARACTERISTIC CURVES
(Continued)
3.0
2.8
2.6
2.4
2.2
2.00.0 -0.2 -0.4 -0.6 -0.8 -1.0
Current I (mA)
Output voltage VOH (V)
V IN = OPEN
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN =+5V
V BAT1 =+3V
5.0
4.8
4.6
4.4
4.2
4.00.0 -0.4 -0.8 -1.2 -1.6 -2.0
Current I (mA)
Output voltage VOH (V)
V IN =+5V
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN = OPEN
V BAT1 =+3V
5.0
4.8
4.6
4.4
4.2
4.00.0 -1.0 -2.0 -3.0 -4.0 -5.0
Current I (mA)
Output voltage VOH (V)
V IN =+5V
V BAT1 =+3V
0.5
0.4
0.3
0.2
0.1
00.0 1.0 2.0 3.0 4.0 5.0
Current I (mA)
Output voltage VOL (V)
V IN =+5V
V BAT1 =+2V
1. VOH characteristics of RESET pin 2. VOL characteristics of RESET pin
3. VOH characteristics of RESET pin 4. VOL characteristics of RESET pin
5. VOH characteristics of ALM pin 6. VOL characteristics of ALM pin
MB3790
14
(Continued)
50
40
30
20
10
0-40 -20 0 20
Ambient temperature Ta (°C)
Input current
I
IN
(µA)
60
70
40 60 80
V
IN
=+5V
2.7
2.6
2.5
2.4
2.3
2.2-40 -20 0 20
Ambient temperature Ta (°C)
Battery voltage
V
BAT
(V)
2.8
2.9
40 60 80
V
BATH1
V
BATL1
V
BATH2
V
BATL2
4.4
4.3
4.2
4.1
4.0
3.9-40 -20 0 20
Ambient temperature Ta (°C)
Power-down detection voltage
V
IN
(
V)
4.5
4.6
40 60 80
V
INL
V
INH
7. Temperature characteristics of input current
9. Temperature characteristics of power-down
detection voltage
8. Temperature characteristics of battery power
detection voltage
MB3790
15
■APPLICATION
1. Method of Using the CONTROL Pin
It is possible to control the oper ation of analog switch 1 by entering a High or Low level to the CONTR OL pin while
being powered by the battery . The Table below shows how the analog switch operates when its operation is controlled
from the CONTROL pin.
When using the primar y and the secondar y batter ies in combination as in the case of memor y cards, be sure to
set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current
flowing from analog switch 1.
• Control Conditions of CONTRO L Pin
*1: If the CONTROL pin is released open, the logic state of the CMOS circuit ma y become instab le letting current
flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input.
*2: The ON-resistance of the analog switch is approximately 10 kΩ.
Operating state Control conditions ON/OFF State of analog switch*2
Input voltage (VIN)CONTROL pin*1Analog switch 1 Analog switch 2
Standby/active state VIN > VINL High/Low OFF OFF
Backup state VINL > VIN High (= VOUT)OFF ON
VINL > VIN Low (= GND) ON ON
Analog Switch connection Diagram
V BAT1
Connection to the
primary battery
Analog Switch 1
SBD
V BAT2
Analog Switch 2
V OUT
Connection to the
secondary battery
MB3790
16
3. Outputting Reset Signal Forcibly
The reset signal can be output forcibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset
signal is held on until the capacitor CT is charged up after the VSENSE pin is released open.
[Reset Pulse Width Calculation Formula]
Reset Pulse Width tPO (s) = CT (F) ×106 (where CT = capacitance)
Example: When CT = 1000 pF, tPO = 1 ms (Typ)
Forced Reset Method 1
Forced Reset Method 2
V IN V IN
VSENSE
47kΩ
SW
CT
GND
CT
SW: Turned on (VRESET = High)
V IN V IN
VSENSE
47kΩ
Control signal
input pin
CT
GND
10kΩ
10kΩ
Q1
CT
When the voltage enough to turn on Q1 (≥ approx. 1.2 V) gives to the Control signal input pin,
VRESET is equal to High level.
MB3790
17
4. Adjusting the Supply Voltage Detection Level Set time
The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 µs or
more. The set time before this reset signal is output can be extended by connecting a capacitor to the VSENSE pin.
5. Compatibility with JEIDA Memory Card Guideline Ver. 4
The MB3790 has its ALM1 and ALM2 pin specifications matched to the BVD2 and BVD1 pin specifications of the
JEID A Memory Card Guideline Ver. 4. Therefore , the ALM1 and ALM2 pins can be connected directly to the BVD2
and BVD1 pins.
• Alarm Pin Detection Voltage Levels
VBAT1: Primary battery voltage
Pin Name VBAT1 ≤ 2.37 V 2.37 V < VBAT1 ≤ 2.65V 2.65 V ≤ VBAT1 Connected Pin
ALM1 Low level Low level High level BVD2
ALM2 Low level High level High level BVD1
Adjusting the Supply Voltage Detection Level Set Time
V IN V IN
VSENSE
CGND
5V
4V
t PI
MB3790
18
■STANDARD DEVICE CONFIGURATION
V IN
C 1
ALARM1
*1
ALARM2
GND
*2
ALARM1
V BAT1
V OUT
V OUT
V BAT2
ALARM2
GND RESET
RESET
CT
V IN
V IN
CONTROL
*2
C 2
*1
CT
L
O
G
I
C
S
R
A
M
Primary
battery
Secondary
battery
*1 For C1 and C2, use capacitors of 0.022 µF or more.
*2 For VIN and VOUT, connect these two pins to the mating pins, respectively.
MB3790
19
■NOTES ON USE
• Take account of common impedance when designing the earth line on a printed wiring board.
• Take measures against static electricity.
- For semiconductors, use antistatic or conductive containers.
- When storing or carrying a printed circuit board after chip mounting, put it in a conductive bag or container.
- The work table, tools and measuring instruments must be grounded.
- The worker must put on a grounding device containing 250 kΩ to 1 MΩ resistors in series.
• Do not apply a negative voltage
- Applying a negative voltage of −0.3 V or less to an LSI may generate a parasitic transistor, resulting in
malfunction.
■ORDERING INFORMATION
Part number Package Remarks
MB3790PF 16-pin Plastic SOP
(FPT-16P-M06)
MB3790PFT 20-pin Plastic TSSOP
(FPT-20P-M04)
MB3790
20
■PACKAGE DIMENSIONS
(Continued)
16-pin Plastic SOP
(FPT-16P-M06)
C
2002 FUJITSU LIMITED F16015S-c-4-7
0.13(.005) M
Details of "A" part
7.80±0.405.30±0.30
(.209±.012) (.307±.016)
–.008
+.010
–0.20
+0.25
10.15
INDEX
1.27(.050)
0.10(.004)
18
916
0.47±0.08
(.019±.003)
–0.04
+0.03
0.17
.007 +.001
–.002
"A" 0.25(.010)
(Stand off)
0~8˚
(Mounting height)
2.00 +0.25
–0.15
.079 +.010
–.006
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.10 +0.10
–0.05
–.002
+.004
.004
.400*1
*2
0.10(.004)
Dimensions in mm (inches) .
Note : The values in parentheses are reference values.
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
MB3790
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information, such as descriptions of function and application
circuit examples, in this document are presented solely for the
purpose of reference to show examples of operations and uses of
Fujitsu semiconductor device; Fujitsu does not warrant proper
operation of the device with respect to use based on such
information. When you develop equipment incorporating the
device based on such information, you must assume any
responsibility arising out of such use of the information. Fujitsu
assumes no liability for any damages whatsoever arising out of
the use of the information.
Any information in this document, including descriptions of
function and schematic diagrams, shall not be construed as license
of the use or exercise of any intellectual property right, such as
patent right or copyright, or any other right of Fujitsu or any third
party or does Fujitsu warrant non-infringement of any third-party’s
intellectual property right or other right by using such information.
Fujitsu assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result
from the use of information contained herein.
The products described in this document are designed, developed
and manufactured as contemplated for general use, including
without limitation, ordinary industrial use, general office use,
personal use, and household use, but are not designed, developed
and manufactured as contemplated (1) for use accompanying fatal
risks or dangers that, unless extremely high safety is secured, could
have a serious effect to the public, and could lead directly to death,
personal injury, severe physical damage or other loss (i.e., nuclear
reaction control in nuclear facility, aircraft flight control, air traffic
control, mass transport control, medical life support system, missile
launch control in weapon system), or (2) for use requiring
extremely high reliability (i.e., submersible repeater and artificial
satellite).
Please note that Fujitsu will not be liable against you and/or any
third party for any claims or damages arising in connection with
above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You
must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and
equipment such as redundancy, fire protection, and prevention of
over-current levels and other abnormal operating conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Law of Japan, the prior
authorization by Japanese government will be required for export
of those products from Japan.
F0308
FUJITSU LIMITED Printed in Japan
