2SJ479(L)/(S) - Hitachi Semiconductor

2SJ479(L), 2SJ479(S)

Silicon P Channel DV–L MOS FET

High Speed Power Switching

ADE-208-541 (Z)

1st. Edition

Sep. 1997

Features

• Low on-resistance

RDS(on) = 25 mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

123

LDPAK

2SJ479(L), 2SJ479(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS –30 V

Gate to source voltage VGSS ±20 V

Drain current ID–30 A

Drain peak current ID(pulse)Note1 –120 A

Body to drain diode reverse drain current IDR –30 A

Channel dissipation Pch Note2 50 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

2SJ479(L), 2SJ479(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS –30 — — V ID = –10mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0

Zero gate voltege drain

current IDSS — — –10 µAV

DS = –30 V, VGS = 0

Gate to source leak current IGSS — — ±10 µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state RDS(on) —2535mΩI

= –15A, VGS = –10V Note3

resistance RDS(on) —4060mΩI

= –15A, VGS = –4V Note3

Forward transfer admittance |yfs| 1220—S I

= –15A, VDS = –10V Note3

Input capacitance Ciss — 1700 — pF VDS = –10V

Output capacitance Coss — 950 — pF VGS = 0

Reverse transfer capacitance Crss — 260 — pF f = 1MHz

Turn-on delay time td(on) — 20 — ns VGS = –10V, ID = –15A

Rise time tr— 290 — ns RL = 0.67Ω

Turn-off delay time td(off) — 170 — ns

Fall time tf— 130 — ns

Body to drain diode forward

voltage VDF — –1.1 — V IF = –30A, VGS = 0

Body to drain diode reverse

recovery time trr — 70 — ns IF = –30A, VGS = 0

diF/ dt = 50A/µs

Note: 3. Pulse test

See characteristic curves of 2SJ471

2SJ479(L), 2SJ479(S)

Main Characteristics

100

050 100 150 200

–500

–200

–100

–20

–50

–10

–2

–5

–1

–0.5

–0.1 –0.3 –1 –3 –10 –30 –100

1 ms

Ta = 25 °C

100 µs

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximun Safe Operation Area

Operation in

this area is

limited by R DS(on)

0.3

0.1

0.03

0.01

10 µ100 µ1 m 10 m 100 m 1 10

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 2.5 °C/W, Tc = 25 °C

θ γ θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermao Impedance s (t)

2SJ479(L), 2SJ479(S)

Vin Monitor

D.U.T.

Vin

10 V

= –10 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Timen Test Circuit Waveform

2SJ479(L), 2SJ479(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

2SJ479(L), 2SJ479(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ479(L), 2SJ479(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

2SJ479(L), 2SJ479(S)

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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