BC327 thru BC328
Vishay Semiconductors
for merly General Semiconductor
Document Number 88158 www.vishay.com
08-May-02 1
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for
AF-driver stages and low-power output stages.
• These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementar y types, the NPN
transistors BC327 and BC338 are recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Emitter Voltage BC327 –VCES 50 V
BC328 30
Collector-Emitter Voltage BC327 –VCEO 45 V
BC328 25
Emitter-Base Voltage –VEBO 5V
Collector Current –IC800 mA
Peak Collector Current –ICM 1A
Base Current –IB100 mA
Power Dissipation at Tamb = 25°CP
tot 625(1) mW
Thermal Resistance Junction to Ambient Air RΘJA 200(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
BC327 thru BC328
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88158
208-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group -16 100 160 250
-25 -VCE = 1 V, -IC= 100 mA 160 250 400
DC Current Gain -40 hFE 250 400 630 —
Current Gain Group -16 60 130 —
-25 -VCE = 1 V, -IC= 300 mA 100 200 —
-40 170 320 —
BC327 -VCE = 45 V —2 100 nA
Collector-Emitter Cutoff Current BC328 -ICES -VCE = 25 V —2 100 nA
BC327 -VCE = 45 V, Tamb = 125°C——10 µA
BC328 -VCE = 25 V, Tamb = 125°C——10 µA
Collector Saturation Voltage -VCEsat -IC= 500 mA, -IB= 50 mA ——0.7 V
Base-Emitter Voltage -VBE -VCE = 1 V, -IC= 300 mA ——1.2 V
Collector-Emitter Breakdown Voltage BC327 -V(BR)CEO -IC= 10 mA 45 ——V
BC328 25 ——
Collector-Emitter Breakdown Voltage BC327 -V(BR)CES -IC= 0.1 mA 50 ——V
BC328 30 ——
Emitter-Base Breakdown Voltage -V(BR)EBO -IE= 0.1 mA 5 ——V
Gain-Bandwidth Product fT-VCE = 5 V, -IC= 10 mA —100 —MHz
f = 50 MHz
Collector-Base Capacitance CCBO -VCB = 10 V, f = 1 MHz —12 —pF
BC327 thru BC328
Vishay Semiconductors
for merly General Semiconductor
Document Number 88158 www.vishay.com
08-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC327 thru BC328
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88158
408-May-02
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
BC327 thru BC328
Vishay Semiconductors
for merly General Semiconductor
Document Number 88158 www.vishay.com
08-May-02 5
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
