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MS2213
DESCRIPTION::
The MS2213 is a silicon NPN bipolar device specifically designed
for JTIDS pulsed power applications from 960-1215 MHz.
Gold metallization and emitter ballasting assure high reliability
under Class C amplifier operation. This device operates over a
wide range of pulse widths, duty cycles and temperatures, and
can withstand a 15:1 VSWR mismatch under load.
AABSOLUTE MAXIMUM RATINGS BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
VCC Collector-Supply Voltage 40 V
IC Device Current 3.5 A
PDISS Power Dissipation 75 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +200 °°C
Thermal DataThermal Data
RTH(J-C)
Junction-case Thermal Resistance
2.2 °°C/W
Features
• 960-1215 MHz
• COMMON BASE
• GOLD METALLIZATION
• HERMETIC PACKAGE
• CLASS C OPERATION
• POUT = 30 W MIN. WITH 7.8 dB GAIN
RF & MICROWAVE TRANSISTORS
AVIONICS/JTIDS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855