GC2510 – GC2546
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM ®
www.MICROSEMI.com
Copyright 2007
Rev.: 2009-02-03
RoHS Com
p
liant
POWER GENERATION
Step Recovery Diodes
DESCRIPTION
The GC2500 series step recovery diodes are epitaxial silicon varactors which
provide high output power and efficiencies in harmonic generator
applications. Strict material and process controls result in high reproducibility.
A unique silicon dioxide passivation process assures greater reliability and
low leakage currents at high temperatures.
Diodes are available in various capacitance ranges for each of the 4 voltage
ratings. These diodes represent the lowest transition time (snap time)
available for each voltage rating. Unless otherwise specified, capacitance will
be within the range shown below for each type. A capacitance tolerance of
±10% is available at an additional charge. Diodes can be optimized for
custom electrical or mechanical specifications. Custom parameters for
capacitance, voltage, transition time, series resistance, etc. are available
upon request. All specifications shown above are based on the style 30
package. Many packages options are available, including 150A, 35, 36, 42
and 56. Chip mounted on carriers with gold wire/ribbon leads are also
available. Other package styles are available to meet specific requirements.
Some limitations apply. Contact Microsemi for details.
APPLICATIONS
The GC2500 series of step recovery varactors are used as harmonic
generators for all orders of multiplication X2 through X20 for both
narrow and wide bandwidths. Applications include local oscillators,
voltage controlled oscillators, frequency synthesizers, and up
converters. They are also used in comb generators to generate a
broad frequency spectrum and in high speed pulse shaping circuits.
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 The GC2500 Series of products are
supplied with a RoHS complaint Gold finish.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating Symbol Value Unit
Maximum Leakage Current
@80% of Minimum Rated VB IR 50 nA
Storage Temperature TSTG -65 to +150 ºC
Operating Temperature TOP -55 to +125 ºC
KEY FEATURES
X2 Through X20 Harmonics
Generation
Excellent Efficiency
High Output Power
RoHS Compliant1
APPLICATIONS/BENEFITS
Harmonics Generation
Local Oscillators
Frequency Synthesizers
Up Converters
G
GC
C2
25
51
10
0
–
–
G
GC
C2
25
54
46
6
GC2510 – GC2546
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
TM ®
www.MICROSEMI.com
Copyright 2007
Rev.: 2009-02-03
RoHS Com
p
liant
POWER GENERATION
Step Recovery Diodes
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model Number
Vb(V)
IR=10μA
(Min)
Cj(pF)1
@-6V
TL(ns)2
(Min)
T
Notes:
T(ps)
(Typ)
Rs(Ω)3
@25 mA
(Max)
P1(˚C/W)4
(Max)
GC2510 15 0.2-0.4 8 60 1.2 125
GC2511 15 0.4-0.6 8 60 1.0 100
GC2512 15 0.6-0.8 8 60 0.7 100
GC2513 15 0.8-1.0 8 60 0.5 75
GC2514 15 1.0-1.4 8 60 0.4 75
GC2515 15 1.4-2.0 8 60 0.3 60
GC2516 15 2.0-3.0 8 60 0.25 60
GC2520 20 0.2-0.4 11 70 1.0 100
GC2521 20 0.4-0.6 11 70 0.7 75
GC2522 20 0.6-0.8 11 70 0.6 75
GC2523 20 0.8-1.0 11 70 0.5 75
GC2524 20 1.0-1.4 11 70 0.4 75
GC2525 20 1.4-2.0 11 70 0.3 60
GC2526 20 2.0-3.0 11 70 0.25 60
GC2530 30 0.2-0.4 17 100 0.8 75
GC2531 30 0.4-0.6 17 100 0.6 60
GC2532 30 0.6-0.8 17 100 0.5 60
GC2533 30 0.8-1.0 17 100 0.4 60
GC2534 30 1.0-1.4 17 100 0.3 60
GC2535 30 1.4-2.0 17 100 0.25 50
GC2536 30 2.0-3.0 17 100 0.2 50
GC2540 40 0.2-0.4 21 150 0.8 60
GC2541 40 0.4-0.6 21 150 0.6 50
GC2542 40 0.6-0.8 21 150 0.5 50
GC2543 40 0.8-1.0 21 150 0.4 50
GC2544 40 1.0-1.4 21 150 0.3 50
GC2545 40 1.4-2.0 21 150 0.25 40
GC2546 40 2.0-3.0 21 150 0.2 40
1. Junction capacitance is measure at 1 MHz.
2. Carrier lifetime is measure at IF = 10mA, IR = 6mA .
3. Series resistance is measure using a transmission loss technique @ 1 GHz.
4. Thermal resistance is measure using pulsed conditions while measuring forward voltage drop
across the diode mounted in an infinite heat sink.
GC2510 – GC2546
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
TM ®
www.MICROSEMI.com
Copyright 2007
Rev.: 2009-02-03
RoHS Com
p
liant
POWER GENERATION
Step Recovery Diodes
Typical Package Options
PACKAGE STYLE 00
PACKAGE STYLE 17
Notes:
- Dimensions vary by model number
- Consult factory for details
- Order as GC25xx – 00
PACKAGE STYLE 30
PACKAGE STYLE 42
OTHER PACKAGE STYLES AVAILABLE ON REQUEST
CONSULT FACTORY
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