DESCRIPTION
The APS12200, APS12210, and APS12230 are three-wire,
planar Hall-effect sensor integrated circuits (ICs). These
devices were developed in accordance with ISO 26262:2011
and support a functional safety level of ASIL A.
This family of precision Hall-effect latch ICs feature extended
AEC-Q100 qualification and are ideal for high-temperature
operation up to 175°C junction temperatures. In addition,
the APS12200/10/30 include a number of features designed
specifically to maximize system robustness, such as reverse-
battery protection, output current limiter, overvoltage, and
EMC protection.
The single silicon chip includes: a voltage regulator, a Hall
plate, small signal amplifier, chopper stabilization, Schmitt
trigger, and a short-circuit-protected open-drain output. A
south pole of sufficient strength turns the output on; a north
pole of sufficient strength is necessary to turn the output off.
The devices include on-board transient protection for all pins,
permitting operation directly from a vehicle battery or regulator
with supply voltages from 2.8 to 24 V.
Two package styles provide a choice of through-hole or surface
mounting. Package type LH is a modified 3-pin SOT23W
surface-mount package, while UA is a three-pin ultramini SIP
for through-hole mounting. Both packages are lead (Pb) free
and RoHS compliant, with 100% matte-tin-plated leadframes.
APS12200-10-30-DS, Rev. 2
MCO-0000382
FEATURES AND BENEFITS
• Symmetrical latch switchpoints
• ASIL A functional safety compliance
• Automotive-grade ruggedness and fault tolerance
□Extended AEC-Q100 qualification
□Reverse-battery and 40 V load dump protection
□Operation from –40°C to 175°C junction temperature
□High EMC immunity, ±12 kV HBM ESD
□Output short-circuit and overvoltage protection
□Superior temperature stability
□Resistant to physical stress
• Operation from unregulated supplies, 2.8 to 24 V
• Chopper stabilization
• Solid-state reliability
• Industry-standard packages and pinouts
High-Temperature Precision Hall-Effect Latches
PACKAGES:
Functional Block Diagram
Not to scale
APS12200, APS12210,
and APS12230
3-pin SOT23W
(suffix LH)
3-pin SIP
(suffix UA)
May 28, 2019
2
-
C
ONTROL
VCC
GND
VOUT
S
AMPLE
, H
OLD
&
A
VERAGING
H
ALL
A
MP
.
Hall
Element
D
YNAMIC
O
FFSET
C
ANCELLATION
L
OW
-P
ASS
F
ILTER
C
URRENT
L
IMIT
T
O
A
LL
S
UBCIRCUITS
R
EGULATOR
S
CHMITT
T
RIGGER
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
2
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
RoHS
COMPLIANT
SELECTION GUIDE
Part Number Packing
[1] Mounting Branding BRP (Min) BOP (Max)
APS12200LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A14
–35 G 35 G
APS12200LLHALT
[2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A14
APS12200LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A15
APS12210LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A16
–80 G 80 G
APS12210LLHALT
[2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A16
APS12210LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A17
APS12230LLHALX 13-in. reel, 10000 pieces/reel 3-pin SOT23W surface mount A19
–180 G 180 G
APS12230LLHALT
[2] 7-in. reel, 3000 pieces/reel 3-pin SOT23W surface mount A19
APS12230LUAA Bulk, 500 pieces/bag 3-pin SIP through hole A20
[1] Contact Allegro for additional packing options.
[2] Available through authorized Allegro distributors only.
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Notes Rating Units
Forward Supply Voltage [1] VCC 30 V
Reverse Supply Voltage [1] VRCC –18 V
Output Off Voltage [1] VOUT 30 V
Output Current [2] IOUT 60 mA
Reverse Output Current IROUT –50 mA
Magnetic Flux Density [3] B Unlimited –
Maximum Junction Temperature TJ(max) 165 °C
For 500 hours 175 °C
Storage Temperature Tstg –65 to 170 °C
ESD Voltage [4]
VESD(HBM) Human Body Model according to AEC-Q100-002 ±12 kV
VESD(CDM) Charged Device Model according to AEC-Q100-011 ±1 kV
VESD(SYS) ISO 10605, System Level ±15 kV
[1] This rating does not apply to extremely short voltage transients such as load dump and/or ESD. Those events have individual ratings,
specific to the respective transient voltage event.
[2] Through short-circuit current limiting device.
[3] Guaranteed by design.
[4] System level ESD rating based on characterization performed under ISO 10605:2008 (2 kΩ / 330 pF) with the application circuit
shown in Figure 4.
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
3
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
PINOUT DIAGRAMS AND TERMINAL LIST TABLE
Terminal List
Name Description Number
Package LH Package UA
VCC Connects power supply to chip 1 1
VOUT Output from circuit 2 3
GND Ground 3 2
1
3
2
GND
VOUT
VCC
Package UA
Package LH
1
2
3
GND
VOUT
VCC
Figure 1: Typical Application Diagram
VSUPPLY
VOUT
CBYP =
0.1 µF
RLOAD =
1 kΩ
APS122XX
VCC VOUT
GND
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
4
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
ELECTRICAL CHARACTERISTICS: Valid over full operating voltage, ambient temperature range TA = –40°C to 150°C, and with
CBYP = 0.1 µF (unless otherwise specified)
Characteristics Symbol Test Conditions Min. Typ. [1] Max. Unit [2]
ELECTRICAL CHARACTERISTICS
Forward Supply Voltage VCC Operating, TJ < 175°C 2.8 – 24 V
Supply Current ICC 1 2 3 mA
Output Leakage Current IOUTOFF VOUTOFF = 24 V, B < BRP – – 10 µA
Output Saturation Voltage VOUT(SAT) IOUT = 20 mA, B > BOP – 200 500 mV
Output Off Voltage VOUTOFF B < BRP – – 24 V
Power-On Time tON
VCC ≥ VCC(min), B < BRP(min) – 10 G,
B > BOP(max) + 10 G – – 25 µs
Power-On State, Output
[3] POS VCC ≥ VCC(min), t < tON Low –
Chopping Frequency fC– 800 – kHz
Output Rise Time
[4] trRLOAD = 1 kΩ, CL = 20 pF – 0.2 2 µs
Output Fall Time
[4] tfRLOAD = 1 kΩ, CL = 20 pF – 0.1 2 µs
TRANSIENT PROTECTION CHARACTERISTICS
Output Short-Circuit Current Limit IOM 30 – 60 mA
Output Zener Clamp Voltage VZoutput IOUT = 3 mA, TA = 25°C, Output Off 30 – – V
Reverse Battery Current IRCC VRCC = –18 V, TA = 25°C – – –5 mA
Supply Zener Clamp Voltage VZICC = ICC(max) + 3 mA, TA = 25°C 30 – – V
MAGNETIC CHARACTERISTICS
Operate Point BOP
APS12200 5 20 35 G
APS12210 25 50 80 G
APS12230 100 150 180 G
Release Point BRP
APS12200 –35 –20 –5 G
APS12210 –80 –50 –25 G
APS12230 –180 –150 –100 G
Hysteresis BHYS
APS12200 10 40 70 G
APS12210 50 100 160 G
APS12230 200 300 360 G
Symmetry BSYM BOP + BRP –27.5 – 27.5 G
Magnetic Offset BOFF (BOP + BRP) / 2 –13.75 – 13.75 G
[1] Typical data are at TA = 25°C and VCC = 12 V.
[2] 1 G (gauss) = 0.1 mT (millitesla).
[3] Guaranteed by device design and characterization.
[4] CL = oscilloscope probe capacitance.
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
5
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
THERMAL CHARACTERISTICS: May require derating at maximum conditions; see application information
Characteristic Symbol Test Conditions Value Units
Package Thermal Resistance RθJA
Package LH, 1-layer PCB with copper limited to solder pads 228 °C/W
Package LH, 2-layer PCB with 0.463 in.
2 of copper area each side
connected by thermal vias 110 °C/W
Package UA, 1-layer PCB with copper limited to solder pads 165 °C/W
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
25 45 65 85 105 125 145 165 185
Maximum Allowable VCC (V)
Temperature (°C)
Power Derating Curve
TJ(max) = 175°C; ICC = ICC(max), IOUT = 0 mA (Output Off)
VCC(max)
VCC(min)
Package UA, 1-layer PCB
(RθJA = 165 °C/W)
Package LH, 1-layer PCB
(RθJA = 228 °C/W)
Package LH, 2-layer PCB
(RθJA = 110 °C/W)
TJ(max)
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
25 45 65 85 105 125 145 165 185
Power Dissipation, PD(mW)
Temperature (°C)
Power Dissipation versus Ambient Temperature
Package LH, 2-layer PCB
(RθJA = 110°C/W)
Package UA, 1-layer PCB
(R
θJA
= 165°C/W)
Package LH, 1-layer PCB
(RθJA = 228°C/W)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
6
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA
Electrical Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
ICC (mA)
T
A
(°C)
Average Supply Current versus Ambient Temperature
2.8
12
24
VCC (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2 6 10 14 18 22 26
ICC (mA)
Average Supply Current versus Supply Voltage
-40
25
150
TA(°C)
0
50
100
150
200
250
300
350
400
450
500
-60 -40 -20 0 20 40 60 80 100 120 140 160
V
OUT(SAT)
(mV)
T
A
(°C)
Average Low Output Voltage versus Ambient Temperature for I
OUT
= 20 mA
2.8
12
24
V
CC
(V)
0
50
100
150
200
250
300
350
400
450
500
2 6 10 14 18 22 26
V
OUT(SAT)
(mV)
V
CC
(V)
Average Low Output Voltage versus Supply Voltage for I
OUT
= 20 mA
-40
25
150
T
A
(°C)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
7
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA (continued)
APS12200 Magnetic Characteristics
-25
-20
-15
-10
-5
0
5
10
15
20
25
-60 -40 -20 020 40 60 80 100 120 140 160
BSYM (G)
TA(°C)
Average BOP + BRP Symmetry versus Ambient Temperature
2.8
12
24
VCC (V)
-25
-20
-15
-10
-5
0
5
10
15
20
25
2 6 10 14 18 22 26
B
SYM
(G)
VCC (V)
Average BOP + BRP Symmetry versus Supply Voltage
-40
25
150
TA(°C)
5
10
15
20
25
30
35
-60 -40 -20 020 40 60 80 100 120 140 160
BOP (G)
T
A
(°C)
Average Operate Point versus Ambient Temperature
2.8
12
24
VCC (V)
5
10
15
20
25
30
35
2 6 10 14 18 22 26
BOP (G)
VCC (V)
Average Operate Point versus Supply Voltage
-40
25
150
TA(°C)
10
20
30
40
50
60
70
-60 -40 -20 020 40 60 80 100 120 140 160
BHYS (G)
TA(°C)
Average Switchpoint Hysteresis versus Ambient Temperature
2.8
12
24
VCC (V)
10
20
30
40
50
60
70
2 6 10 14 18 22 26
BHYS (G)
VCC (V)
Average Switchpoint Hysteresis versus Supply Voltage
-40
25
150
TA(°C)
-35
-30
-25
-20
-15
-10
-5
-60 -40 -20 020 40 60 80 100 120 140 160
BRP (G)
TA(°C)
Average Release Point versus Ambient Temperature
2.8
12
24
VCC (V)
-35
-30
-25
-20
-15
-10
-5
2 6 10 14 18 22 26
BRP (G)
VCC (V)
Average Release Point versus Supply Voltage
-40
25
150
TA(°C)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
8
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA (continued)
APS12210 Magnetic Characteristics
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
-60 -40 -20 020 40 60 80 100 120 140 160
BOP (G)
TA(°C)
Average Operate Point versus Ambient Temperature
2.8
12
24
VCC (V)
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
2 6 10 14 18 22 26
B
OP
(G)
VCC (V)
Average Operate Point versus Supply Voltage
-40
25
150
TA(°C)
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-60 -40 -20 020 40 60 80 100 120 140 160
BRP (G)
T
A
(°C)
Average Release Point versus Ambient Temperature
2.8
12
24
VCC (V)
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
2 6 10 14 18 22 26
BRP (G)
VCC (V)
Average Release Point versus Supply Voltage
-40
25
150
TA(°C)
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
-60 -40 -20 020 40 60 80 100 120 140 160
B
HYS
(G)
TA(°C)
Average Switchpoint Hysteresis versus Ambient Temperature
2.8
12
24
VCC (V)
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
2 6 10 14 18 22 26
BHYS (G)
VCC (V)
Average Switchpoint Hysteresis versus Supply Voltage
-40
25
150
TA(°C)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-60 -40 -20 020 40 60 80 100 120 140 160
B
SYM
(G)
T
A
(°C)
Average BOP + BRP Symmetry versus Ambient Temperature
2.8
12
24
VCC (V)
-25
-20
-15
-10
-5
0
5
10
15
20
25
2 6 10 14 18 22 26
BSYM (G)
VCC (V)
Average BOP + BRP Symmetry versus Supply Voltage
-40
25
150
TA(°C)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
9
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
CHARACTERISTIC PERFORMANCE DATA (continued)
APS12230 Magnetic Characteristics
100
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
-60 -40 -20 020 40 60 80 100 120 140 160
BOP (G)
TA(°C)
Average Operate Point versus Ambient Temperature
2.8
12
24
VCC (V)
100
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
2 6 10 14 18 22 26
B
OP
(G)
VCC (V)
Average Operate Point versus Supply Voltage
-40
25
150
TA(°C)
-180
-175
-170
-165
-160
-155
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
-60 -40 -20 020 40 60 80 100 120 140 160
BRP (G)
TA(°C)
Average Release Point versus Ambient Temperature
2.8
12
24
VCC (V)
-180
-175
-170
-165
-160
-155
-150
-145
-140
-135
-130
-125
-120
-115
-110
-105
-100
2 6 10 14 18 22 26
BRP (G)
VCC (V)
Average Release Point versus Supply Voltage
-40
25
150
TA(°C)
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
-60 -40 -20 020 40 60 80 100 120 140 160
B
HYS
(G)
TA(°C)
Average Switchpoint Hysteresis versus Ambient Temperature
2.8
12
24
VCC (V)
200
210
220
230
240
250
260
270
280
290
300
310
320
330
340
350
360
2 6 10 14 18 22 26
BHYS (G)
VCC (V)
Average Switchpoint Hysteresis versus Supply Voltage
-40
25
150
TA(°C)
-25
-20
-15
-10
-5
0
5
10
15
20
25
-60 -40 -20 020 40 60 80 100 120 140 160
B
SYM
(G)
TA(°C)
Average BOP + BRP Symmetry versus Ambient Temperature
2.8
12
24
VCC (V)
-25
-20
-15
-10
-5
0
5
10
15
20
25
2 6 10 14 18 22 26
BSYM (G)
VCC (V)
Average BOP + BRP Symmetry versus Supply Voltage
-40
25
150
TA(°C)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
10
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
OPERATION
The output of these devices switches low (turns on) when a mag-
netic field perpendicular to the Hall element exceeds the operate
point threshold, BOP (see Figure 2). After turn-on, the output volt-
age is VOUT(SAT)
. The output transistor is capable of continuously
sinking up to 30 mA. When the magnetic field is reduced below
the release point, BRP , the device output goes high (turns off)
to VOUTOFF. The difference in the magnetic operate and release
points is the hysteresis, BHYS , of the device. This built-in hyster-
esis allows clean switching of the output even in the presence of
external mechanical vibration and electrical noise.
Removal of the magnetic field will leave the device output
latched on if the last crossed switchpoint is BOP, or latched off if
the last crossed switch point is BRP.
POWER-ON BEHAVIOR
Device power-on occurs once tON has elapsed. During the
time prior to tON, and after VCC ≥ VCC(min), the output state is
VOUT(SAT) (Low). After tON has elapsed, the output will corre-
spond with the applied magnetic field for B > BOP or B < BRP.
See Figure 3 for an example.
Powering-on the device in the hysteresis range (less than BOP and
higher than BRP) will give an output state of VOUT(SAT). The cor-
rect state is attained after the first excursion beyond BOP or BRP
.
Figure 2: Switching Behavior of Latches
On the horizontal axis, the B+ direction indicates increasing
south polarity magnetic field strength, and the B– direction
indicates increasing north polarity field strength.
FUNCTIONAL DESCRIPTION
BOP
BRP
BHYS
VOUTOFF
VOUT
VOUT(SAT)
Switch to Low
Switch to High
B+
B–
V+
0
0
t
t
V
VCC(min)
tON
0
Output State
Undefined for
VCC
< VCC
(min) POS
VOUT(SAT )
VOUTOFF
V
VOUT
VCC
POS
B > BOP, BRP < B < BOP
B < BRP
Figure 3: Power-On Timing Diagram
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
11
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
FUNCTIONAL SAFETY
The APS12200, APS12210, and APS12230
were developed in accordance with
ISO 26262:2011 as a hardware Safety Ele-
ment out of Context (SEooC) with ASIL A capability for use in
automotive safety-related systems when integrated and used in the
manner prescribed in the applicable safety manual and datasheet.
The APS12200, APS12210, and APS12230 can be easily integrated
into safety-critical systems requiring higher ASIL ratings that
incorporate external diagnostics or use measures such as redun-
dancy. Safety documentation will be provided to support and guide
the integration process. For further information, contact your local
Allegro field applications engineer or sales representative.
APPLICATIONS
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to guarantee correct performance
under harsh environmental conditions and to reduce noise from
internal circuitry. As is shown in Figure 1: Typical Application
Circuit, a 0.1 µF capacitor is required. In applications where
maximum robustness is required, such as in an automobile, addi-
tional measures may be taken. In Figure 4: Enhanced Protection
Circuit, a resistor in series with the VCC pin and a capacitor on
the VOUT pin enhance the EMC immunity of the device. It is
up to the user to fully qualify the Allegro sensor IC in their end
system to ensure they achieve their system requirements.
These devices are sensitive in the direction perpendicular to the
branded face, as depicted in Figure 5. For further information,
extensive applications information on magnets and Hall-effect
sensors is available in:
• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’s Products – SMD and
Through-Hole, AN26009
All are provided on the Allegro website:
www.allegromicro.com
VSUPPLY
VOUT
2
CBYP =
0.1 µF
1
RLOAD =
1 kΩ
COUT =
4.7 nF
RS =
100 Ω
VPULL-UP
3
APS122XX
VCC VOUT
GND
A
A
A
R
S
and C
OUT
are recommended for maximum
robustness in an automotive environment.
Figure 4: Enhanced Protection Circuit
Figure 5: Sensing Congurations
2
-
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
12
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Amp
Regulator
Clock/Logic
Hall Element
Sample and
Hold
Low-Pass
Filter
CHOPPER STABILIZATION
A limiting factor for switchpoint accuracy when using Hall-effect
technology is the small signal voltage developed across the Hall
plate. This voltage is proportionally small relative to the offset
that can be produced at the output of the Hall sensor. This makes
it difficult to process the signal and maintain an accurate, reliable
output over the specified temperature and voltage range. Chopper
stabilization is a proven approach used to minimize Hall offset.
The Allegro technique, dynamic quadrature offset cancellation,
removes key sources of the output drift induced by temperature
and package stress. This offset reduction technique is based on a
signal modulation-demodulation process. Figure 6 illustrates how
it is implemented.
The undesired offset signal is separated from the magnetically
induced signal in the frequency domain through modulation. The
subsequent demodulation acts as a modulation process for the
offset, causing the magnetically induced signal to recover its orig-
inal spectrum at baseband while the DC offset becomes a high-
frequency signal. Then, using a low-pass filter, the signal passes
while the modulated DC offset is suppressed. Allegro’s innova-
tive chopper stabilization technique uses a high-frequency clock.
The high-frequency operation allows a greater sampling rate
that produces higher accuracy, reduced jitter, and faster signal
processing. Additionally, filtering is more effective and results in
a lower noise analog signal at the sensor output. Devices such as
the APS12200, APS12210, and APS12230 that use this approach
have an extremely stable quiescent Hall output voltage, are
immune to thermal stress, and have precise recoverability after
temperature cycling. This technique is made possible through the
use of a BiCMOS process which allows the use of low offset and
low noise amplifiers in combination with high-density logic and
sample-and-hold circuits.
Figure 6: Model of Chopper Stabilization
(Dynamic O󰀨set Cancellation)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
13
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
POWER DERATING
The device must be operated below the maximum junction tem-
perature of the device, TJ(max). Under certain combinations of
peak conditions, reliable operation may require derating supplied
power or improving the heat dissipation properties of the appli-
cation. This section presents a procedure for correlating factors
affecting operating TJ. (Thermal data is also available on the
Allegro MicroSystems website.)
The Package Thermal Resistance, RθJA, is a figure of merit sum-
marizing the ability of the application and the device to dissipate
heat from the junction (die), through all paths to the ambient air.
Its primary component is the Effective Thermal Conductivity, K,
of the printed circuit board, including adjacent devices and traces.
Radiation from the die through the device case, RθJC, is a relatively
small component of RθJA. Ambient air temperature, TA, and air
motion are significant external factors, damped by overmolding.
The resulting power dissipation capability directly reflects upon
the ability of the device to withstand extreme operating condi-
tions. The junction temperature mission profile specified in the
Absolute Maximum Ratings table designates a total operating life
capability based on qualification for the most extreme conditions,
where TJ may reach 175°C.
The silicon IC is heated internally when current is flowing into
the VCC terminal. When the output is on, current sinking into the
VOUT terminal generates additional heat. This may increase the
junction temperature, TJ, above the surrounding ambient tempe-
rature. The APS12200, APS12210, and APS12230 are permitted
to operate up to TJ = 175°C. As mentioned above, an operating
device will increase TJ according to equations 1, 2, and 3 below.
This allows an estimation of the maximum ambient operating
temperature.
PD = VIN × IIN (1)
ΔT = PD × RθJA (2)
TJ = TA + ΔT (3)
For example, given common conditions such as: TA= 25°C,
VCC = 12 V, ICC = 2 mA, VOUT = 185 mV, IOUT = 20 mA (output
on), and RθJA = 165°C/W, then:
PD = (VCC × ICC) + (VOUT × IOUT) =
(12 V × 2 mA) + (185 mV × 20 mA) =
24 mW + 3.7 mW = 27.7 mW
ΔT = PD × RθJA = 27.7 mW × 165°C/W = 4.6°C
TJ = TA + ΔT = 25°C + 4.6°C = 29.6°C
A worst-case estimate, PD(max), represents the maximum allow-
able power level (VCC(max), ICC(max)), without exceeding
TJ(max), at a selected RθJA.
For example, given the conditions RθJA = 228°C/W, TJ(max) =
175°C, VCC(max) = 24 V, ICC(max) = 3 mA, VOUT = 500 mV,
and IOUT = 25 mA (output on), the maximum allowable operating
ambient temperature can be determined.
The power dissipation required for the output is shown below:
PD(VOUT) = VOUT × IOUT = 500 mV × 25 mA = 12.5 mW
The power dissipation required for the IC supply is shown below:
PD(VCC) = VCC × ICC = 24 V × 3 mA = 72 mW
Next, by inverting using equation 2:
ΔT = PD × RθJA = [PD(VOUT) + PD(VCC)] × 228°C/W =
(12.5 mW + 72 mW) × 228°C/W =
84.5 mW × 228°C/W = 19.3°C
Finally, by inverting equation 3 with respect to voltage:
TA(est) = TJ(max) – ΔT = 175°C – 19.3°C = 155.7°C
In the above case, there is sufficient power dissipation capability
to operate up to TA(est). The example indicates that TA(max)
can be as high as 155.7°C without exceeding TJ(max). Howe-
ver, the TA(max) rating of the devices is 150°C; the APS12200,
APS12210, and APS12230 performance is not guaranteed above
TA = 150°C.
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
14
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
0.55 REF
Gauge Plane
Seating Plane
0.25 BSC
0.95 BSC
0.95
1.00
0.70
2.40
2
1
AActive Area Depth, 0.28 mm REF
B
C
B
Reference land pattern layout
All pads a minimum of 0.20 mm from all adjacent pads; adjust as necessary
to meet application process requirements and PCB layout tolerances
Branding scale and appearance at supplier discretion
A
PCB Layout Reference View
Branded Face
CStandard Branding Reference View
APS12200LLHA
1
A14
APS12210LLHA
1
A16
APS12230LLHA
1
A19
2.90 +0.10
–0.20
4°±4°
8X 10° REF
0.180+0.020
–0.053
0.05 +0.10
–0.05
0.25 MIN
1.91 +0.19
–0.06
2.98 +0.12
–0.08
1.00 ±0.13
0.40 ±0.10
For Reference Only; not for tooling use (reference dwg. 802840)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
DHall element, not to scale
D
D
D
1.49
0.96
3
Package LH, 3-Pin (SOT-23W)
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
15
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Package UA, 3-Pin SIP
2 31
1.27 NOM
1.02
MAX
45°
45°
C
1.52 ±0.05
B
A
E
E
1.44
2.04
E
Gate and tie bar burr area
A
B
C
Dambar removal protrusion (6X)
D
E
Active Area Depth, 0.50 mm REF
Branding scale and appearance at supplier discretion
Hall element (not to scale)
For Reference Only; not for tooling use (reference DWG-9065)
Dimensions in millimeters
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
Mold Ejector
Pin Indent
DStandard Branding Reference View
A15
1
APS12200LUAA
A17
1
APS12210LUAA
A20
1
APS12230LUAA
0.41 +0.03
–0.06
0.43 +0.05
–0.07
14.99 ±0.25
4.09 +0.08
–0.05
3.02 +0.08
–0.05
0.79 REF
10°
Branded
Face
High-Temperature Precision Hall-Effect Latches
APS12200,
APS12210,
and APS12230
16
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
Copyright 2019, Allegro MicroSystems.
Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit
improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor
for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
For the latest version of this document, visit our website:
www.allegromicro.com
Revision History
Number Date Description
– March 6, 2018 Initial release
1 February 11, 2019 Minor editorial updates
2 May 28, 2019 Updated Typical Application Diagram (page 3), Functional Safety section (page 11), and Power Derating
section (page 13).